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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Versatile High Diode 2N7002 N Channel MOSFET for portable device power
China Versatile High Diode 2N7002 N Channel MOSFET for portable device power

  1. China Versatile High Diode 2N7002 N Channel MOSFET for portable device power

Versatile High Diode 2N7002 N Channel MOSFET for portable device power

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Drain to Source Voltage 60V
Current - Continuous Drain(Id) 115mA
Operating Temperature - -
RDS(on) 7Ω@5V,50mA
Gate Threshold Voltage (Vgs(th)) 1.6V
Reverse Transfer Capacitance (Crss@Vds) 5pF
Number 1 N-channel
Input Capacitance(Ciss) 50pF
Pd - Power Dissipation 225mW
Description N-Channel 60V 115mA 0.225W Surface Mount SOT-23
Mfr. Part # 2N7002
Package SOT-23
Model Number 2N7002

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  1. Product Details
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Product Specification

Drain to Source Voltage 60V Current - Continuous Drain(Id) 115mA
Operating Temperature - - RDS(on) 7Ω@5V,50mA
Gate Threshold Voltage (Vgs(th)) 1.6V Reverse Transfer Capacitance (Crss@Vds) 5pF
Number 1 N-channel Input Capacitance(Ciss) 50pF
Pd - Power Dissipation 225mW Description N-Channel 60V 115mA 0.225W Surface Mount SOT-23
Mfr. Part # 2N7002 Package SOT-23
Model Number 2N7002

Product Overview

The 2N7002 is an N-Channel MOSFET from High Diode Semiconductor, designed for load switching in portable devices and DC/DC converters. It features a high-density cell design for low RDS(ON), making it a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability.

Product Attributes

  • Brand: High Diode Semiconductor
  • Product Type: MOSFET (N-Channel)
  • Marking: 2N7002
  • Package Type: SOT-23 Plastic-Encapsulated

Technical Specifications

Parameter Symbol Value Unit Test Conditions
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0 V, ID=250 A
Gate-Threshold Voltage Vth(GS) 1 - 1.6 V VDS=VGS, ID=250 A
Gate-body Leakage lGSS 80 nA VDS=0 V, VGS=20 V
Zero Gate Voltage Drain Current IDSS 80 nA VDS=60 V, VGS=0 V
On-state Drain Current ID(ON) 500 mA VGS=10 V, VDS=7 V
Drain-Source On-Resistance RDS(on)MAX 5 @10V VGS=10 V, ID=500mA
Drain-Source On-Resistance RDS(on)MAX 7 @5V VGS=5 V, ID=50mA
Continuous Drain Current ID 115 mA
Power Dissipation PD 0.225 W
Junction Temperature TJ 150
Storage Temperature Tstg -50 ~+150
Gate-Source Voltage VGS 20 V
Forward Transconductance gfs 80 mS VDS=10 V, ID=200mA
Drain-source on-voltage VDS(on) 0.5 - 3.75 V VGS=10V, ID=500mA
Drain-source on-voltage VDS(on) 0.05 - 0.375 V VGS=5V, ID=50mA
Diode Forward Voltage VSD 0.55 - 1.2 V IS=115mA, VGS=0 V
Input Capacitance Ciss 50 pF VDS=25V, VGS=0V, f=1MHz
Output Capacitance Coss 25 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss 5 pF VDS=25V, VGS=0V, f=1MHz
Turn-on Time td(on) 20 ns VDD=25 V, RL=50 , ID=500mA,VGEN=10 V, RG=25
Turn-off Time td(off) 40 ns VDD=25 V, RL=50 , ID=500mA,VGEN=10 V, RG=25

* Parameters marked with * have no way to verify.


2410121245_High-Diode-2N7002_C466660.pdf

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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