Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| RDS(on) | 3mΩ@10V,20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 19.1pF@50V |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 900pF |
| Pd - Power Dissipation | 125W |
| Input Capacitance(Ciss) | 4.797nF@50V |
| Gate Charge(Qg) | 84nC@10V |
| Description | 100V 120A 3mΩ@10V,20A 4V@250uA 1 N-channel 125W TO-263 Single FETs, MOSFETs RoHS |
| Mfr. Part # | 120N10 |
| Package | TO-263 |
| Model Number | 120N10 |
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Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 120A |
| RDS(on) | 3mΩ@10V,20A | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 19.1pF@50V | Number | 1 N-channel |
| Output Capacitance(Coss) | 900pF | Pd - Power Dissipation | 125W |
| Input Capacitance(Ciss) | 4.797nF@50V | Gate Charge(Qg) | 84nC@10V |
| Description | 100V 120A 3mΩ@10V,20A 4V@250uA 1 N-channel 125W TO-263 Single FETs, MOSFETs RoHS | Mfr. Part # | 120N10 |
| Package | TO-263 | Model Number | 120N10 |
The 120N10 is an N-Channel Power MOSFET featuring ultra-low RDS(ON) and low gate charge. It is 100% UIS tested and 100% Rg tested, offering Pb-free lead plating and being Halogen-free and RoHS-compliant. This MOSFET is ideal for motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC & AC/DC (SR) sub-systems and power management in telecom, industrial automation, and CE products.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-to-Source Voltage | VDS | 100 | V | |||
| Gate-to-Source Voltage | VGS | ±20 | V | |||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Power Dissipation | PD | TC = 25°C | 312 | W | ||
| TC = 100°C | 125 | W | ||||
| Pulsed Drain Current | IDM | (2) | 689 | A | ||
| Avalanche Energy | EAS | (3) | 726 | mJ | ||
| Continuous Drain Current | ID | TC = 25°C (1) | 200 | A | ||
| TC = 100°C (1) | 120 | A | ||||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | ID = 250µA, VGS = 0V | 100 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source ON-Resistance | RDS(ON) | VGS = 10V, ID = 20A (1) | 3.0 | mΩ | ||
| Gate-Body Leakage Current | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V | 1.0 | µA | ||
| TJ = 55°C | 5.0 | µA | ||||
| Forward Transconductance | gFS | VDS = 5V, ID = 20A | 50 | S | ||
| Diode Forward Voltage | VSD | IS = 20A, VGS = 0V (2) | 0.66 | 1.0 | V | |
| DYNAMIC PARAMETERS | ||||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 50V, f = 1MHz | 4797 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 50V, f = 1MHz | 900 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 50V, f = 1MHz | 19.1 | pF | ||
| SWITCHING PARAMETERS | ||||||
| Gate Resistance | Rg | VGS = 0V, VDS= 0V, f = 1MHz | 1.9 | Ω | ||
| Total Gate Charge | Qg | VDS = 50V, ID = 20A, VGS = 10V (5) | 84 | nC | ||
| VDS = 50V, ID = 20A, VGS = 6.0V (5) | 57 | nC | ||||
| Gate Source Charge | Qgs | VDS = 50V, ID = 20A, VGS = 10V (5) | 24 | nC | ||
| Gate Drain Charge | Qgd | VDS = 50V, ID = 20A, VGS = 10V (5) | 27 | nC | ||
| Turn-On Delay Time | tD(on) | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5) | 21 | ns | ||
| Turn-On Rise Time | tr | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5) | 35 | ns | ||
| Turn-Off Delay Time | tD(off) | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5) | 49 | ns | ||
| Turn-Off Fall Time | tf | VGS = 10V, VDS = 50V, RL = 2.5Ω, RGEN = 3Ω (5) | 30 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF = 20A, dIF/dt = 100A/µs (5) | 71 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF = 20A, dIF/dt = 100A/µs (5) | 127 | nC | ||
| THERMAL PERFORMANCE | ||||||
| Thermal Resistance, Junction-to-Case | RθJC | 0.40 | °C/W | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 45 | °C/W | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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