| Configuration | - |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | - |
| RDS(on) | 180mΩ@10V,11A |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | - |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 400pF |
| Input Capacitance(Ciss) | 1.3nF |
| Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | - |
| Description | N-Channel 200V 18A 2W Through Hole TO-220-3L |
| Mfr. Part # | IRF640 |
| Package | TO-220-3L |
| Model Number | IRF640 |
View Detail Information
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Product Specification
| Configuration | - | Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 18A | Operating Temperature - | - |
| RDS(on) | 180mΩ@10V,11A | Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | - | Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| Number | 1 N-channel | Output Capacitance(Coss) | 400pF |
| Input Capacitance(Ciss) | 1.3nF | Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | - | Description | N-Channel 200V 18A 2W Through Hole TO-220-3L |
| Mfr. Part # | IRF640 | Package | TO-220-3L |
| Model Number | IRF640 |
The IRF640 is a third-generation HEXFET MOSFET from International Rectifier, designed for cost-effectiveness and superior performance. It offers a combination of fast switching, ruggedized design, low on-resistance, and low thermal resistance, making it suitable for power dissipation levels up to approximately 50 watts. The TO-220-3L package is widely adopted in commercial and industrial applications.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Continuous Drain Current | ID | VGS @ 10 V | 18 | A | ||
| Power Dissipation | PD | W | ||||
| Linear Derating Factor | 1.0 | W/ | ||||
| Gate-Source Voltage | VGS | 20 | V | |||
| Single Pulse Avalanche Energy | EAS | (note 1) | 580 | mJ | ||
| Thermal Resistance Junction to Ambient | RJA | 62.5 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=250A | 200 | V | ||
| Gate-threshold voltage | V(GS)th | VDS=VGS, ID=250A | 2 | 4 | V | |
| Gate-body leakage | lGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS=200V, VGS=0V | 25 | A | ||
| Drain-source on-resistance | RDS(on) | VGS=10V, ID=11A (note 2) | 0.18 | |||
| Forward transconductance | gfs | VDS=50V, ID=11A (note 2) | 6.7 | S | ||
| Diode forward voltage | VSD | IS=18A, VGS=0V (note 2) | 2 | V | ||
| Input capacitance | Ciss | VDS=25V, VGS=0V,f=1MHz (note 3) | 1300 | pF | ||
| Output capacitance | Coss | VDS=25V, VGS=0V,f=1MHz (note 3) | 400 | pF | ||
| Reverse transfer capacitance | Crss | VDS=25V, VGS=0V,f=1MHz (note 3) | 120 | pF | ||
| Turn-on time | td(on) | VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3) | 14 | ns | ||
| Rise time | tr | VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3) | 51 | ns | ||
| Turn-off time | td(off) | VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3) | 45 | ns | ||
| Fall time | tf | VDD=100V,RD=5.4, ID=18A, RG=9.1 (note 2,3) | 36 | ns |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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