| Configuration | - |
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 1Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 4.5V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 208pF |
| Input Capacitance(Ciss) | 2.009nF |
| Pd - Power Dissipation | 150W |
| Gate Charge(Qg) | 68nC@10V |
| Description | N-Channel 900V 9A 150W Through Hole TO-3P-3 |
| Mfr. Part # | SVF3878PN |
| Package | TO-3P-3 |
| Model Number | SVF3878PN |
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Product Specification
| Configuration | - | Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 9A | Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 1Ω@10V | Gate Threshold Voltage (Vgs(th)) | 4.5V@250uA |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| Number | 1 N-channel | Output Capacitance(Coss) | 208pF |
| Input Capacitance(Ciss) | 2.009nF | Pd - Power Dissipation | 150W |
| Gate Charge(Qg) | 68nC@10V | Description | N-Channel 900V 9A 150W Through Hole TO-3P-3 |
| Mfr. Part # | SVF3878PN | Package | TO-3P-3 |
| Model Number | SVF3878PN |
The SVF3878PN is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior robustness in avalanche and commutation modes. This device is ideal for AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 900 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=900V, VGS=0V | -- | -- | 100 | A |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 10.0 | A |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250A | 2.5 | -- | 4.5 | V |
| On State Resistance | RDS(on) | VGS=10V, ID=4.5A | -- | 1.0 | 1.28 | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | -- | 2009 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | -- | 208 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | -- | 47 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=400V, RG=25, ID=4.0A | -- | 22 | -- | ns |
| Turn-on Rise Time | tr | VDD=400V, RG=25, ID=4.0A | -- | 28 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=400V, RG=25, ID=4.0A | -- | 84 | -- | ns |
| Turn-off Fall Time | tf | VDD=400V, RG=25, ID=4.0A | -- | 30 | -- | ns |
| Total Gate Charge | Qg | VDD=450V, VGS=10V, ID=9.0A | -- | 68 | -- | nC |
| Gate-Source Charge | Qgs | VDD=450V, VGS=10V, ID=9.0A | -- | 10 | -- | nC |
| Gate-Drain Charge | Qg d | VDD=450V, VGS=10V, ID=9.0A | -- | 39 | -- | nC |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Source Current | IS | -- | -- | -- | 9.0 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 27 | A |
| Diode Forward Voltage | VSD | IS=9.0A, VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=9.0A, VGS=0V, dIF/dt=100A/S | -- | 715 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=9.0A, VGS=0V, dIF/dt=100A/S | -- | 6.5 | -- | C |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | UNLESS OTHERWISE NOTED, TA=25C | -- | -- | 900 | V |
| Gate-Source Voltage | VGS | UNLESS OTHERWISE NOTED, TA=25C | -- | 30 | -- | V |
| Drain Current | ID | TC=25C | -- | 9.0 | -- | A |
| Drain Current | ID | TC=100C | -- | 5.7 | -- | A |
| Drain Current Pulsed | IDM | -- | -- | -- | 27.0 | A |
| Power Dissipation | PD | TC=25C | -- | -- | 150 | W |
| Power Dissipation Derate | -- | above 25C | -- | -- | 1.2 | W/C |
| Single Pulsed Avalanche Energy | EAS | Note 1 | -- | -- | 966 | mJ |
| Operation Junction Temperature Range | TJ | -- | -55 | -- | +150 | C |
| Storage Temperature Range | Tstg | -- | -55 | -- | +150 | C |
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | RJC | -- | -- | -- | 0.83 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | -- | -- | -- | 50 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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