| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 60mΩ@4.5V,2.5A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF |
| Output Capacitance(Coss) | 39pF |
| Pd - Power Dissipation | 710mW |
| Gate Charge(Qg) | 3.5nC@4.5V |
| Description | N-Channel 20V 3A 710mW Surface Mount SOT-23 |
| Mfr. Part # | FDN335N |
| Package | SOT-23 |
| Model Number | FDN335N |
View Detail Information
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Product Specification
| Drain to Source Voltage | 20V | Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 60mΩ@4.5V,2.5A |
| Gate Threshold Voltage (Vgs(th)) | 1V | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | Number | 1 N-channel |
| Input Capacitance(Ciss) | 180pF | Output Capacitance(Coss) | 39pF |
| Pd - Power Dissipation | 710mW | Gate Charge(Qg) | 3.5nC@4.5V |
| Description | N-Channel 20V 3A 710mW Surface Mount SOT-23 | Mfr. Part # | FDN335N |
| Package | SOT-23 | Model Number | FDN335N |
The FDN335N is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in most small power switching and load switch applications. This fast-switching MOSFET operates at 20V and features super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density Trench technology. It meets RoHS and Green Product requirements with full function reliability approval. The FDN335N is available as a Green Device.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | 12 | V | |||
| ID@TA=25 | Continuous Drain Current, VGS @ 4.5V1 | 3 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ 4.5V1 | 2.2 | A | |||
| IDM | Pulsed Drain Current2 | 10 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 0.71 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient1 | --- | 120 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 65 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=2.5A | 46 | 60 | m | |
| VGS=2.5V , ID=1A | 61 | 85 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.65 | 1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=16V , VGS=0V , TJ=55 | --- | 5 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=12V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=2A | 5 | --- | S | |
| Qg | Total Gate Charge (4.5V) | VDS=10V , VGS=4.5V , ID=2.5A | 3.5 | --- | nC | |
| Qgs | Gate-Source Charge | 0.6 | --- | |||
| Qgd | Gate-Drain Charge | 0.45 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=10V , VGS=4.5V , RG=6 ID=2.5A | 8 | --- | ns | |
| Tr | Rise Time | 7 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 30 | --- | ns | ||
| Tf | Fall Time | 7 | --- | ns | ||
| Ciss | Input Capacitance | VDS=10V , VGS=0V , f=1MHz | 180 | --- | pF | |
| Coss | Output Capacitance | 39 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 20 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | --- | 3 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V | |
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| FDN335N | SOT-23 | 3000/Tape&Reel | ||||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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