Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 1Ω@10V,3.5A |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF@25V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.38nF@25V |
| Pd - Power Dissipation | 48W |
| Description | N-Channel 600V 7A 48W Through Hole TO-220F |
| Mfr. Part # | SMF7N60 |
| Package | TO-220F |
| Model Number | SMF7N60 |
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Product Specification
| Drain to Source Voltage | 600V | Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 1Ω@10V,3.5A |
| Gate Threshold Voltage (Vgs(th)) | 2V | Reverse Transfer Capacitance (Crss@Vds) | 15pF@25V |
| Number | 1 N-channel | Input Capacitance(Ciss) | 1.38nF@25V |
| Pd - Power Dissipation | 48W | Description | N-Channel 600V 7A 48W Through Hole TO-220F |
| Mfr. Part # | SMF7N60 | Package | TO-220F |
| Model Number | SMF7N60 |
The SMF7N60 is a 600V N-Channel MOSFET from HUAKE semiconductors, designed for high-frequency switching mode power supplies and active power factor correction. It features low gate charge, low Crss, 100% avalanche tested, fast switching, and improved dv/dt capability, offering reliable performance in demanding applications.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 600 | V | |||
| ID | Drain Current - Continuous (Tc=25C) | 7.0* | A | |||
| ID | Drain Current - Continuous (Tc=100C) | 4.5* | A | |||
| IDM | Drain Current - Pulsed (Note1) | 28* | A | |||
| VGSS | Gate-Source Voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note2) | 590 | mJ | |||
| IAR | Avalanche Current (Note1) | 7.0 | A | |||
| EAR | Repetitive Avalanche Energy (Note1) | 14.0 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 4.5 | V/ns | |||
| PD | Power Dissipation (TC =25C) | 48 | W | |||
| PD | Derate above 25C | 0.38 | W/C | |||
| Tj | Operating Junction Temperature | 150 | C | |||
| Tstg | Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 2.6 | C /W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62.5 | C /W | |||
| Electrical Characteristics (Tc=25C unless otherwise noted) | ||||||
| BVDSS | Drain-source Breakdown Voltage | VGS=0V ,ID=250A | 600 | -- | -- | V |
| BVDSS /TJ | Breakdown Voltage Temperature Coefficient | ID=250A (Referenced to 25C) | -- | 0.7 | -- | V/C |
| IDSS | Zero Gate Voltage Drain Current | VDS=600V,VGS=0V | -- | -- | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS=480V,Tc=125C | -- | -- | 10 | A |
| IGSSF | Gate-Body Leakage Current,Forward | VGS=+30V, VDS=0V | -- | -- | 100 | nA |
| IGSSR | Gate-Body Leakage Current,Reverse | VGS=-30V, VDS=0V | -- | -- | -100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID=250A | 2.0 | -- | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS=10 V, ID=3.5A | -- | 1.0 | 1.2 | |
| gFS | Forward Transconductance | VDS=40 V, ID=3.5A (Note4) | -- | 6.5 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=25V,VGS=0V, f=1.0MHz | -- | 1380 | -- | pF |
| Coss | Output Capacitance | -- | 170 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 15 | -- | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 300 V, ID = 7.0 A, RG = 25 (Note4,5) | -- | 13 | -- | ns |
| tr | Turn-On Rise Time | -- | 100 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 126 | -- | ns | |
| tf | Turn-Off Fall Time | -- | 48 | -- | ns | |
| Qg | Total Gate Charge | VDS = 480 V, ID =7.0 A, VGS = 10 V (Note4,5) | -- | 30 | -- | nC |
| Qgs | Gate-Source Charge | -- | 6 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 14 | -- | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 7.0 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 28 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS =0V,IS=7.0A | -- | -- | 1.4 | V |
| trr | Reverse Recovery Time | VGS =0V, IS=7.0A, d IF /dt=100A/s (Note4) | -- | 315 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 2.6 | -- | C | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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