Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 90mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF@15V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.08nF@15V |
| Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | 11.8nC@4.5V |
| Description | P-Channel 60V 13A 2W PRPAK3x3-8L |
| Mfr. Part # | HSBB6113 |
| Package | PRPAK3x3-8L |
| Model Number | HSBB6113 |
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 90mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF@15V | Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.08nF@15V | Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | 11.8nC@4.5V | Description | P-Channel 60V 13A 2W PRPAK3x3-8L |
| Mfr. Part # | HSBB6113 | Package | PRPAK3x3-8L |
| Model Number | HSBB6113 |
The HSBB6113 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
The HSBB6113 is a P-channel, 60V fast-switching MOSFET featuring high cell density trench technology. It provides excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. The device is RoHS compliant, a Green Product, and 100% EAS guaranteed, ensuring reliability.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -13 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1 | -8.3 | A | |||
| IDM | Pulsed Drain Current2 | -26 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 29.7 | mJ | |||
| IAS | Avalanche Current | 24.4 | A | |||
| PD@TA=25 | Total Power Dissipation4 | 2 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 4 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -60 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=-1mA | --- | -0.03 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-10A | --- | --- | 90 | m |
| VGS=-4.5V , ID=-5A | --- | --- | 115 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | --- | -2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | 4.56 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=-48V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=-48V , VGS=0V , TJ=55 | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=-5V , ID=-3A | --- | 8.7 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 15 | --- | |
| Qg | Total Gate Charge (-4.5V) | VDS=-48V , VGS=-4.5V , ID=-3A | --- | 11.8 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.9 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 6.5 | --- | nC | |
| td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | --- | 8.8 | --- | ns |
| tr | Rise Time | --- | 19.6 | --- | ns | |
| td(off) | Turn-Off Delay Time | --- | 47.2 | --- | ns | |
| tf | Fall Time | --- | 9.6 | --- | ns | |
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 1080 | --- | pF |
| Coss | Output Capacitance | --- | 73 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 50 | --- | pF | |
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | --- | -13 | A |
| ISM | Pulsed Source Current2,5 | --- | --- | -26 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1 | V |
Notes:
1. Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows Max. rating. Test condition: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-24.4A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.
| Part Number | Package Code | Packaging |
|---|---|---|
| HSBB6113 | SOP-8 | 3000/Tape&Reel |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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