| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 73A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 8.5mΩ@10V,13.5A |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF@50V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.32nF@50V |
| Pd - Power Dissipation | 108W |
| Gate Charge(Qg) | 45nC@10V |
| Description | N-Channel 100V 73A 108W Surface Mount TO-252 |
| Mfr. Part # | HSU0048 |
| Package | TO-252 |
| Model Number | HSU0048 |
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Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 73A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 8.5mΩ@10V,13.5A |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | Reverse Transfer Capacitance (Crss@Vds) | 20pF@50V |
| Number | 1 N-channel | Input Capacitance(Ciss) | 3.32nF@50V |
| Pd - Power Dissipation | 108W | Gate Charge(Qg) | 45nC@10V |
| Description | N-Channel 100V 73A 108W Surface Mount TO-252 | Mfr. Part # | HSU0048 |
| Package | TO-252 | Model Number | HSU0048 |
The HSU0048 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and low gate charge, making it ideal for synchronous rectification in AC/DC quick chargers. This MOSFET is 100% EAS guaranteed and complies with RoHS and Halogen-Free standards.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current | (1) | 73 | A | ||
| ID@TC=70 | Continuous Drain Current | (1) | 46 | A | ||
| IDM | Pulsed Drain Current | (2) | 290 | A | ||
| EAS | Single Pulse Avalanche Energy | (3) | 61 | mJ | ||
| IAS | Avalanche Current | 35 | A | |||
| PD@TC=25 | Total Power Dissipation | (4) | 108 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-Ambient | (1)(t10s) | 25 | /W | ||
| RJA | Thermal Resistance Junction-Ambient | (1) | 55 | /W | ||
| RJC | Thermal Resistance Junction-Case | (1) | 1.15 | /W | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | V | ||
| RDS(ON),TYP | Static Drain-Source On-Resistance | VGS=10V , ID=13.5A | 6.6 | 8.5 | m | |
| RDS(ON),TYP | Static Drain-Source On-Resistance | VGS=4.5V , ID=11.5A | 8.7 | 11 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | 2.3 | V | |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=20A | 85 | S | ||
| Qg | Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=13.5A | 45 | nC | ||
| Qg | Total Gate Charge (4.5V) | 19.3 | nC | |||
| Qgs | Gate-Source Charge | 9.5 | nC | |||
| Qgd | Gate-Drain Charge | 4.8 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3, ID=13.5A | 10 | ns | ||
| Tr | Rise Time | 6.5 | ns | |||
| Td(off) | Turn-Off Delay Time | 45 | ns | |||
| Tf | Fall Time | 7.5 | ns | |||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 3320 | pF | ||
| Coss | Output Capacitance | 605 | pF | |||
| Crss | Reverse Transfer Capacitance | 20 | pF | |||
| IS | Continuous Source Current | (1,5) VG=VD=0V , Force Current | 48 | A | ||
| VSD | Diode Forward Voltage | (2) VGS=0V , IS=1A , TJ=25 | 1.1 | V | ||
| trr | Reverse Recovery Time | IF=13.5A , di/dt=100A/s , TJ=25 | 33 | nS | ||
| Qrr | Reverse Recovery Charge | 150 | nC |
Notes:
(1) The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
(2) The data tested by pulsed, pulse width 300s, duty cycle 2%.
(3) The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.3mH, IAS=35A.
(4) The power dissipation is limited by 150 junction temperature.
(5) The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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