Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 6mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF@50V |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 2.925nF |
| Input Capacitance(Ciss) | 2.925nF@50V |
| Pd - Power Dissipation | 170W |
| Gate Charge(Qg) | 46nC@10V |
| Description | N-Channel 100V 120A 170W PRPAK5x6-8L |
| Mfr. Part # | HSBA045N10 |
| Package | PRPAK5x6-8L |
| Model Number | HSBA045N10 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 6mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF@50V | Number | 1 N-channel |
| Output Capacitance(Coss) | 2.925nF | Input Capacitance(Ciss) | 2.925nF@50V |
| Pd - Power Dissipation | 170W | Gate Charge(Qg) | 46nC@10V |
| Description | N-Channel 100V 120A 170W PRPAK5x6-8L | Mfr. Part # | HSBA045N10 |
| Package | PRPAK5x6-8L | Model Number | HSBA045N10 |
The HSBA045N10 is a high-performance N-Channel MOSFET designed for fast switching applications. Featuring 100V drain-source voltage and a super low RDS(ON), this device is ideal for motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. It offers guaranteed 100% EAS performance and is available as a Green Device, utilizing advanced high cell density Trench technology.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V 1,6 | 120 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V 1,6 | 80 | A | |||
| IDM | Pulsed Drain Current 2 | 480 | A | |||
| EAS | Single Pulse Avalanche Energy 3 | 525 | mJ | |||
| PD@TC=25 | Total Power Dissipation 4 | 170 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient 1 | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case 1 | --- | 0.72 | /W | ||
| Product Summary | ||||||
| VDS = 100 V, ID = 120 A | RDS(ON),typ = 4.5 m | |||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance 2 | VGS=10V , ID=20A | --- | 4.5 | 6.0 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.0 | --- | 4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=100V , VGS=0V , TJ=125 | --- | --- | 10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=10V , ID=20A | --- | 26.5 | --- | S |
| Qg | Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=20A | --- | 46 | --- | nC |
| Qgs | Gate-Source Charge | --- | 13 | --- | ||
| Qgd | Gate-Drain Charge | --- | 9.5 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.0, ID=20A | --- | 25 | --- | ns |
| Tr | Rise Time | --- | 6.8 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 35 | --- | ||
| Tf | Fall Time | --- | 7.5 | --- | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | --- | 2925 | --- | pF |
| Coss | Output Capacitance | --- | 1509 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 74 | --- | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current 1,5 | VG=VD=0V , Force Current | --- | --- | 120 | A |
| VSD | Diode Forward Voltage 2 | VGS=0V , IS=20A , TJ=25 | --- | --- | 1.2 | V |
| trr | Reverse Recovery Time | IF=20A , dI/dt=100A/s , TJ=25 | --- | 49 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 54 | --- | nC | |
Notes:
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!