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Hefei Purple Horn E-Commerce Co., Ltd.

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China switching P channel MOSFET Hangzhou Silan Microelectronics SVD9Z24NT for power
China switching P channel MOSFET Hangzhou Silan Microelectronics SVD9Z24NT for power

  1. China switching P channel MOSFET Hangzhou Silan Microelectronics SVD9Z24NT for power

switching P channel MOSFET Hangzhou Silan Microelectronics SVD9Z24NT for power

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Drain to Source Voltage 55V
Current - Continuous Drain(Id) 12A
Operating Temperature - -55℃~+175℃
RDS(on) 175mΩ@10V
Gate Threshold Voltage (Vgs(th)) 4V@250uA
Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 30pF
Number 1 P-Channel
Output Capacitance(Coss) 135pF
Input Capacitance(Ciss) 447pF
Pd - Power Dissipation 45W
Gate Charge(Qg) 13nC@10V
Description P-Channel 55V 12A 45W Through Hole TO-220
Mfr. Part # SVD9Z24NT
Package TO-220
Model Number SVD9Z24NT

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  1. Product Details
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Product Specification

Drain to Source Voltage 55V Current - Continuous Drain(Id) 12A
Operating Temperature - -55℃~+175℃ RDS(on) 175mΩ@10V
Gate Threshold Voltage (Vgs(th)) 4V@250uA Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 30pF Number 1 P-Channel
Output Capacitance(Coss) 135pF Input Capacitance(Ciss) 447pF
Pd - Power Dissipation 45W Gate Charge(Qg) 13nC@10V
Description P-Channel 55V 12A 45W Through Hole TO-220 Mfr. Part # SVD9Z24NT
Package TO-220 Model Number SVD9Z24NT

Product Overview

The SVD9Z24NT is a P-channel enhancement mode power MOS field-effect transistor manufactured using Silan's planar VDMOS process. Engineered for minimal on-state resistance and superior switching performance, it excels in high-energy pulse handling in avalanche and commutation modes. This device is ideal for push-pull amplifiers, high-side switching circuits, and CMOS power amplifiers.

Product Attributes

  • Brand: Silan Microelectronics
  • Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
  • Hazardous Substance Control: Pb free
  • Packing Type: Tube

Technical Specifications

CharacteristicsSymbolRatingsUnitTest ConditionsMin.Typ.Max.
ABSOLUTE MAXIMUM RATINGS
Drain-Source VoltageVDS-55V(TC=25C unless otherwise noted)
Gate-Source VoltageVGS20V(TC=25C unless otherwise noted)
Drain Current TC=25CID-12A(TC=25C unless otherwise noted)
Drain Current TC=100CID-8.5A(TC=25C unless otherwise noted)
Drain Current PulsedIDM-48A(TC=25C unless otherwise noted)
Power Dissipation(TC=25C)PD45W(TC=25C unless otherwise noted)
Derate above 25C0.36W/C(TC=25C unless otherwise noted)
Single Pulsed Avalanche Energy (Note 1)EAS106mJ(TC=25C unless otherwise noted)
Operation Junction Temperature RangeTJ-55+175C(TC=25C unless otherwise noted)
Storage Temperature RangeTstg-55+175C(TC=25C unless otherwise noted)
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-CaseRJC2.78C/W
Thermal Resistance, Junction-to-AmbientRJA62.5C/W
ELECTRICAL CHARACTERISTICS
Drain -Source Breakdown VoltageBVDSS-55VVGS=0V, ID=-250A
Drain-Source Leakage CurrentIDSS-25AVDS=-55V, VGS=0V
Gate-Source Leakage CurrentIGSS100nAVGS=20V, VDS=0V
Gate Threshold VoltageVGS(th)-2.0VVGS=VDS, ID=-250A-4.0
Static Drain-Source On State ResistanceRDS(on)175mVGS=-10V, ID=-7.2A
Input CapacitanceCiss447pFVDS=-25V, VGS=0V, f=1.0MHz
Output CapacitanceCoss135pFVDS=-25V, VGS=0V, f=1.0MHz
Reverse Transfer CapacitanceCrss30pFVDS=-25V, VGS=0V, f=1.0MHz
Turn-on Delay Timetd(on)8.47nsVDD=-28V,VGS=-10V, RG=24,ID=-7.2A (Note 2,3)
Turn-on Rise Timetr41.2nsVDD=-28V,VGS=-10V, RG=24,ID=-7.2A (Note 2,3)
Turn-off Delay Timetd(off)30nsVDD=-28V,VGS=-10V, RG=24,ID=-7.2A (Note 2,3)
Turn-off Fall Timetf20.2nsVDD=-28V,VGS=-10V, RG=24,ID=-7.2A (Note 2,3)
Total Gate ChargeQg13nCVDS=-44V,VGS=-10V, ID=-7.2A (Note 2,3)
Gate-Source ChargeQgs3.25nCVDS=-44V,VGS=-10V, ID=-7.2A (Note 2,3)
Gate-Drain ChargeQg5.3nCVDS=-44V,VGS=-10V, ID=-7.2A (Note 2,3)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source CurrentIS-12A
Pulsed Source CurrentISM-48A
Diode Forward VoltageVSD-1.6VIS=-7.2A, VGS=0V
Reverse Recovery TimeTrr50.5nsIS=-7.2A, VGS=0V, dIF/dt=100A/s (Note 2)
Reverse Recovery ChargeQrr0.11CIS=-7.2A, VGS=0V, dIF/dt=100A/s (Note 2)

2501091110_Hangzhou-Silan-Microelectronics-SVD9Z24NT_C2761788.pdf

Company Details

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,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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