Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃@(Tj) |
| RDS(on) | 48mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 85pF |
| Pd - Power Dissipation | 40W |
| Input Capacitance(Ciss) | 2.384nF |
| Gate Charge(Qg) | 69nC@10V |
| Description | N-Channel 100V 20A 40W Surface Mount TO-252 |
| Mfr. Part # | 20N10 |
| Package | TO-252 |
| Model Number | 20N10 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃@(Tj) | RDS(on) | 48mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.2V@250uA | Reverse Transfer Capacitance (Crss@Vds) | 74pF |
| Number | 1 N-channel | Output Capacitance(Coss) | 85pF |
| Pd - Power Dissipation | 40W | Input Capacitance(Ciss) | 2.384nF |
| Gate Charge(Qg) | 69nC@10V | Description | N-Channel 100V 20A 40W Surface Mount TO-252 |
| Mfr. Part # | 20N10 | Package | TO-252 |
| Model Number | 20N10 |
The 20N10 is a 100V, 20A N-channel Power Trench MOSFET designed for various power management applications. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications. This device is 100% UIS and Vds tested, and is Halogen-free and RoHS-compliant.
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | 100 | V | |||
| Gate-to-Source Voltage | VGS | ±20 | V | |||
| Pulsed Drain Current | IDM | (1) | 100 | A | ||
| Single Pulsed Avalanche Energy | EAS | (2) | 31 | mJ | ||
| Continuous Drain Current | ID | @VGS=10V, TC = 25°C | 20 | A | ||
| Continuous Drain Current | ID | @VGS=10V, TC = 100°C | 16 | A | ||
| Power Dissipation | PD | @TC = 25°C | 34 | 36 | W | |
| Power Dissipation | PD | @TC = 100°C | 16 | W | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | to | 150 | °C | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | ID = 250mA, VGS = 0V | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V | 1.0 | mA | ||
| Gate-Body Leakage Current | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250mA | 1.0 | 1.5 | 2.2 | V |
| Static Drain-Source ON-Resistance | RDS(ON) | VGS = 10V, ID = 20A (4) | 34 | 48 | mΩ | |
| Static Drain-Source ON-Resistance | RDS(ON) | VGS = 4.5V, ID = 6A (4) | 36 | 55 | mΩ | |
| Gate Resistance | Rg | VGS = 0V, VDS = 50V, f = 1MHz | 1.8 | Ω | ||
| Input Capacitance | Ciss | VDS = 50V, ID = 20A, f = 1MHz | 1261 | 1766 | pF | |
| Output Capacitance | Coss | VGS = 0V, VDS = 50V, f = 1MHz | 45 | 63 | pF | |
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 50V, f = 1MHz | 39 | 55 | pF | |
| Total Gate Charge | Qg | VGS = 0 to 10V | 31 | 44 | nC | |
| Gate Source Charge | Qgs | VDS = 50V, ID = 20A | 5 | 6 | nC | |
| Gate Drain("Miller") Charge | Qgd | 8 | 12 | nC | ||
| Turn-On Delay Time | td(on) | VGS = 10V, ID = 10A | 8 | ns | ||
| Turn-On Rise Time | tr | 19 | ns | |||
| Turn-Off Delay Time | td(off) | 39 | ns | |||
| Turn-Off Fall Time | tf | 8 | ns | |||
| Continuous Body Diode Forward Current | IS | 20 | A | |||
| Maximum Pulsed Body Diode Forward Current | ISM | 81 | A | |||
| Body Diode Forward Voltage | VSD | IF = 20A, di/dt = 100A/us | 1.2 | V | ||
| Body Diode Reverse Recovery Time | trr | IF = 20A, di/dt = 100A/us | 19 | 26 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF = 20A, di/dt = 100A/us | 39.0 | nC | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | RθJC | 3.1 | °C/W | |||
| Thermal Resistance, Junction to Ambient(3) | RθJA | 40 | °C/W | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!