Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 700V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 2.5Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2.36pF |
| Number | - |
| Output Capacitance(Coss) | 56.43pF |
| Input Capacitance(Ciss) | 497.67pF |
| Pd - Power Dissipation | 33W |
| Gate Charge(Qg) | 10.34nC@10V |
| Description | N-Channel 700V 4A 33W Through Hole TO-220F |
| Mfr. Part # | SVF4N70F |
| Package | TO-220F |
| Model Number | SVF4N70F |
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Product Specification
| Drain to Source Voltage | 700V | Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 2.5Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2.36pF | Number | - |
| Output Capacitance(Coss) | 56.43pF | Input Capacitance(Ciss) | 497.67pF |
| Pd - Power Dissipation | 33W | Gate Charge(Qg) | 10.34nC@10V |
| Description | N-Channel 700V 4A 33W Through Hole TO-220F | Mfr. Part # | SVF4N70F |
| Package | TO-220F | Model Number | SVF4N70F |
The SVF4N70F/D is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM structure VDMOS technology. This advanced technology minimizes on-state resistance, offers superior switching performance, and provides robust high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
| Characteristic | Symbol | SVF4N70F | SVF4N70D | Unit | Notes |
| ABSOLUTE MAXIMUM RATINGS | |||||
| Drain-Source Voltage | VDS | 700 | 700 | V | |
| Gate-Source Voltage | VGS | 30 | 30 | V | |
| Drain Current (TC=25C) | ID | 4.0 | 4.0 | A | |
| Drain Current (TC=100C) | ID | 2.53 | 2.53 | A | |
| Drain Current Pulsed | IDM | 16.0 | 16.0 | A | |
| Power Dissipation (TC=25C) | PD | 33 | 77 | W | |
| Derate above 25C | 0.26 | 0.62 | W/C | ||
| Single Pulsed Avalanche Energy | EAS | 242 | 242 | mJ | Note 1 |
| Operation Junction Temperature Range | TJ | -55+150 | -55+150 | C | |
| Storage Temperature Range | Tstg | -55+150 | -55+150 | C | |
| THERMAL CHARACTERISTICS | |||||
| Thermal Resistance, Junction-to-Case | RJC | 3.79 | 1.62 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | 62.0 | C/W | |
| ELECTRICAL CHARACTERISTICS | |||||
| Drain -Source Breakdown Voltage | BVDSS | 700 | 700 | V | VGS=0V, ID=250A |
| Drain-Source Leakage Current | IDSS | 1.0 | 1.0 | A | VDS=700V, VGS=0V |
| Gate-Source Leakage Current | IGSS | 100 | 100 | nA | VGS=30V, VDS=0V |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 | 2.0 - 4.0 | V | VGS= VDS, ID=250A |
| Static Drain- Source On State Resistance | RDS(on) | 2.5 - 3.0 | 2.5 - 3.0 | VGS=10V, ID=2.0A | |
| Input Capacitance | Ciss | 497.67 | 497.67 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Output Capacitance | Coss | 56.43 | 56.43 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | 2.36 | 2.36 | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Turn-on Delay Time | td(on) | 15.73 | 15.73 | ns | VDD=350V, ID=4.0A, RG=25, Note 2,3 |
| Turn-on Rise Time | tr | 34.40 | 34.40 | ns | VDD=350V, ID=4.0A, RG=25, Note 2,3 |
| Turn-off Delay Time | td(off) | 24.93 | 24.93 | ns | VDD=350V, ID=4.0A, RG=25, Note 2,3 |
| Turn-off Fall Time | tf | 23.60 | 23.60 | ns | VDD=350V, ID=4.0A, RG=25, Note 2,3 |
| Total Gate Charge | Qg | 10.34 | 10.34 | nC | VDS=560V, ID=4.0A, VGS=10V, Note 2,3 |
| Gate-Source Charge | Qgs | 3.15 | 3.15 | nC | VDS=560V, ID=4.0A, VGS=10V, Note 2,3 |
| Gate-Drain Charge | Qgd | 3.90 | 3.90 | nC | VDS=560V, ID=4.0A, VGS=10V, Note 2,3 |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | |||||
| Continuous Source Current | IS | 4.0 | 4.0 | A | Integral Reverse P-N Junction Diode in the MOSFET |
| Pulsed Source Current | ISM | 16.0 | 16.0 | A | |
| Diode Forward Voltage | VSD | 1.4 | 1.4 | V | IS=4.0A,VGS=0V |
| Reverse Recovery Time | Trr | 463.85 | 463.85 | ns | IS=4.0A,VGS=0V, dIF/dt=100A/s (Note 2) |
| Reverse Recovery Charge | Qrr | 2.16 | 2.16 | C | IS=4.0A,VGS=0V, dIF/dt=100A/s (Note 2) |
Notes:
1. L=30mH, IAS=3.72A, VDD=100V, RG=25, starting TJ=25C;
2. Pulse Test: Pulse width 300s, Duty cycle2%;
3. Essentially independent of operating temperature.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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