| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 140A |
| RDS(on) | 2mΩ@10V;3mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 480pF |
| Output Capacitance(Coss) | 2.8nF |
| Pd - Power Dissipation | 83W |
| Input Capacitance(Ciss) | 3.83nF |
| Gate Charge(Qg) | 66nC@10V |
| Description | N-Channel 40V 140A 83W Through Hole TO-220 |
| Mfr. Part # | IRF1404ZPBF(ES) |
| Package | TO-220 |
| Model Number | IRF1404ZPBF(ES) |
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Product Specification
| Drain to Source Voltage | 40V | Current - Continuous Drain(Id) | 140A |
| RDS(on) | 2mΩ@10V;3mΩ@4.5V | Gate Threshold Voltage (Vgs(th)) | 1V@250uA |
| Type | N-Channel | Reverse Transfer Capacitance (Crss@Vds) | 480pF |
| Output Capacitance(Coss) | 2.8nF | Pd - Power Dissipation | 83W |
| Input Capacitance(Ciss) | 3.83nF | Gate Charge(Qg) | 66nC@10V |
| Description | N-Channel 40V 140A 83W Through Hole TO-220 | Mfr. Part # | IRF1404ZPBF(ES) |
| Package | TO-220 | Model Number | IRF1404ZPBF(ES) |
The IRF1404ZPBF(ES) is an N-Channel enhancement mode Field Effect Transistor utilizing advanced shielded gate trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This device is Pb-free and designed for high density cell structure, ensuring low RDS(on), and is Halogen free, reliable, rugged, and avalanche rated with low leakage current.
| Parameter | Symbol | Limit | Unit | Conditions |
| Drain-Source Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 140 | A | TC=25°C |
| Maximum Power Dissipation | PD | 83 | W | |
| Pulsed Drain Current | IDM | 560 | A | |
| Single Pulse Avalanche Energy | EAS | 200 | mJ | Starting TJ=25°C, VDD=32V, VG=10V, RG=25Ω, L=0.5mH |
| Operating Junction Temperature | TJ | 150 | °C | |
| Lead Temperature | TL | 260 | °C | |
| Storage Temperature Range | Tstg | -55 to 150 | °C | |
| Junction-to-Case Thermal Resistance | RθJC | 1.5 | °C/W | Typical |
| Gate Threshold Voltage | VGS(TH) | 1.0 - 2.5 | V | VGS=VDS, ID=250uA |
| Drain-to-source On-resistance | RDS(on) | 2.0 - 2.3 | mΩ | VGS=10V, ID=20A (Typical) |
| Drain-to-source On-resistance | RDS(on) | 3.0 - 3.8 | mΩ | VGS=4.5V, ID=20A (Typical) |
| Input Capacitance | CISS | 3830 | pF | VGS=0V, f=1MHz, VDS=25V |
| Output Capacitance | COSS | 2800 | pF | VGS=0V, f=1MHz, VDS=25V |
| Reverse Transfer Capacitance | CRSS | 480 | pF | VGS=0V, f=1MHz, VDS=25V |
| Total Gate Charge | QG(TOT) | 66 | nC | VGS=10V, VDD=32V, ID=10A |
| Gate-to-Source Charge | QGS | 13.6 | nC | VGS=10V, VDD=32V, ID=10A |
| Gate-to-Drain Charge | QGD | 12.6 | nC | VGS=10V, VDD=32V, ID=10A |
| Turn-On Delay Time | td(ON) | 890 | ns | VGS=10V, VDD=20V, ID=20A, RG=0.5Ω |
| Rise Time | tr | 21 | ns | VGS=10V, VDD=20V, ID=20A, RG=0.5Ω |
| Turn-Off Delay Time | td(OFF) | 72 | ns | VGS=10V, VDD=20V, ID=20A, RG=0.5Ω |
| Fall Time | tf | 34 | ns | VGS=10V, VDD=20V, ID=20A, RG=0.5Ω |
| Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=20A |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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