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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China SOP 8 Package N Channel MOSFET GL GL3010-8 with 100 Percent Single Pulse
China SOP 8 Package N Channel MOSFET GL GL3010-8 with 100 Percent Single Pulse

  1. China SOP 8 Package N Channel MOSFET GL GL3010-8 with 100 Percent Single Pulse

SOP 8 Package N Channel MOSFET GL GL3010-8 with 100 Percent Single Pulse

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 10A
RDS(on) 10mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 180pF
Output Capacitance(Coss) 300pF
Input Capacitance(Ciss) 1.6nF
Pd - Power Dissipation 2.5W
Gate Charge(Qg) 10nC@5V
Description 30V 10A 10mΩ@10V 2.5V@250uA 2.5W SOP-8 Single FETs, MOSFETs RoHS
Mfr. Part # GL3010-8
Package SOP-8
Model Number GL3010-8

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  1. Product Details
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Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 10A
RDS(on) 10mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 180pF Output Capacitance(Coss) 300pF
Input Capacitance(Ciss) 1.6nF Pd - Power Dissipation 2.5W
Gate Charge(Qg) 10nC@5V Description 30V 10A 10mΩ@10V 2.5V@250uA 2.5W SOP-8 Single FETs, MOSFETs RoHS
Mfr. Part # GL3010-8 Package SOP-8
Model Number GL3010-8

Product Overview

The GL3010-8 is a N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it offers fast switching, low gate charge, low RDS(ON), low reverse transfer capacitances, and 100% single pulse avalanche energy testing. It is suitable for PWM applications, load switches, and power management, and comes in a RoHS-compliant SOP-8 package.

Product Attributes

  • Brand: GL Silicon
  • Manufacturer: Wuxi Guang Lei electronic technology co., LTD
  • Channel Type: N-Channel
  • Package Type: SOP-8
  • Compliance: RoHS

Technical Specifications

Parameter Rating Units Conditions
Absolute Ratings
Drain-to-Source Voltage (VDSS) 30 V (Tc=25 unless otherwise specified)
Continuous Drain Current (ID) 10 A (Tc=25 unless otherwise specified)
Continuous Drain Current (ID) 8 A TC = 70 C
Pulsed Drain Current (IDM) 50 A
Gate-to-Source Voltage (VGS) ±20 V
Peak Diode Recovery dv/dt (dv/dta3) 5.0 V/ns
Power Dissipation (PD) 2.5 W
Operating Junction and Storage Temperature Range (TJ, Tstg) -55 to 150
Maximum Temperature for Soldering (TL) 300
Electrical Characteristics
Drain to Source Breakdown Voltage (VDSS) 30 V VGS=0V, ID=-250µA
Bvdss Temperature Coefficient (ΔBVDSS/ΔTJ) 0.1 V/ ID=-250µA, Reference 25
Drain to Source Leakage Current (IDSS) 1 µA VDS=30,VGS=0V,Ta=25
Drain to Source Leakage Current (IDSS) 250 µA VDS=24V,VGS=0V,Ta=125
Gate to Source Forward Leakage (IGSS(F)) 1 µA VGS=+20V
Gate to Source Reverse Leakage (IGSS(R)) -1 µA VGS=-20V
Drain-to-Source On-Resistance (RDS(ON)) 7 mΩ VGS=10V,ID=5A
Drain-to-Source On-Resistance (RDS(ON)) 11 mΩ VGS=4.5V,ID=5.0A
Gate Threshold Voltage (VGS(TH)) 1.3 V VDS=VGS,ID=250µA (Typ.)
Gate Threshold Voltage (VGS(TH)) 1.0 - 2.5 V VDS=VGS,ID=250µA (Min. - Max.)
Dynamic Characteristics
Forward Transconductance (gfs) 15 S VDS=5V,ID=10A
Input Capacitance (Ciss) 1600 pF VGS=0V,VDS=15V,f=1.0MHz
Output Capacitance (Coss) 300 pF VGS=0V,VDS=15V,f=1.0MHz
Reverse Transfer Capacitance (Crss) 180 pF VGS=0V,VDS=15V,f=1.0MHz
Resistive Switching Characteristics
Turn-on Delay Time (td(ON)) 30 ns ID=1A,VDD=25V,VGS=10V,RG=6Ω
Rise Time (tr) 20 ns ID=1A,VDD=25V,VGS=10V,RG=6Ω
Turn-Off Delay Time (td(OFF)) 100 ns ID=1A,VDD=25V,VGS=10V,RG=6Ω
Fall Time (tf) 80 ns ID=1A,VDD=25V,VGS=10V,RG=6Ω
Total Gate Charge (Qg) 10 nC ID=5A,VDD=30V,VGS=5V
Gate to Source Charge (Qgs) 5 nC ID=5A,VDD=30V,VGS=5V
Gate to Drain (Miller)Charge (Qgd) 3 nC ID=5A,VDD=30V,VGS=5V
Source-Drain Diode Characteristics
Continuous Source Current (Body Diode) (IS) 10 A
Maximum Pulsed Current (Body Diode) (ISM) 50 A
Diode Forward Voltage (VSD) 1.5 V IS=10A,VGS=0V
Reverse Recovery Time (trr) 100 ns IS=10A,Tj = 25°C, dIF/dt=100A/us, VGS=0V
Reverse Recovery Charge (Qrr) 240 nC IS=10A,Tj = 25°C, dIF/dt=100A/us, VGS=0V
Thermal Characteristics
Junction-to-Ambient (RθJA) 50 °C/W

2411220235_GL-GL3010-8_C2886409.pdf

Company Details

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,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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