| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 10A |
| RDS(on) | 10mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| Output Capacitance(Coss) | 300pF |
| Input Capacitance(Ciss) | 1.6nF |
| Pd - Power Dissipation | 2.5W |
| Gate Charge(Qg) | 10nC@5V |
| Description | 30V 10A 10mΩ@10V 2.5V@250uA 2.5W SOP-8 Single FETs, MOSFETs RoHS |
| Mfr. Part # | GL3010-8 |
| Package | SOP-8 |
| Model Number | GL3010-8 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 10A |
| RDS(on) | 10mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF | Output Capacitance(Coss) | 300pF |
| Input Capacitance(Ciss) | 1.6nF | Pd - Power Dissipation | 2.5W |
| Gate Charge(Qg) | 10nC@5V | Description | 30V 10A 10mΩ@10V 2.5V@250uA 2.5W SOP-8 Single FETs, MOSFETs RoHS |
| Mfr. Part # | GL3010-8 | Package | SOP-8 |
| Model Number | GL3010-8 |
The GL3010-8 is a N-Channel Power MOSFET from Wuxi Guang Lei electronic technology co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide range of applications, it offers fast switching, low gate charge, low RDS(ON), low reverse transfer capacitances, and 100% single pulse avalanche energy testing. It is suitable for PWM applications, load switches, and power management, and comes in a RoHS-compliant SOP-8 package.
| Parameter | Rating | Units | Conditions |
|---|---|---|---|
| Absolute Ratings | |||
| Drain-to-Source Voltage (VDSS) | 30 | V | (Tc=25 unless otherwise specified) |
| Continuous Drain Current (ID) | 10 | A | (Tc=25 unless otherwise specified) |
| Continuous Drain Current (ID) | 8 | A | TC = 70 C |
| Pulsed Drain Current (IDM) | 50 | A | |
| Gate-to-Source Voltage (VGS) | ±20 | V | |
| Peak Diode Recovery dv/dt (dv/dta3) | 5.0 | V/ns | |
| Power Dissipation (PD) | 2.5 | W | |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | -55 to 150 | ||
| Maximum Temperature for Soldering (TL) | 300 | ||
| Electrical Characteristics | |||
| Drain to Source Breakdown Voltage (VDSS) | 30 | V | VGS=0V, ID=-250µA |
| Bvdss Temperature Coefficient (ΔBVDSS/ΔTJ) | 0.1 | V/ | ID=-250µA, Reference 25 |
| Drain to Source Leakage Current (IDSS) | 1 | µA | VDS=30,VGS=0V,Ta=25 |
| Drain to Source Leakage Current (IDSS) | 250 | µA | VDS=24V,VGS=0V,Ta=125 |
| Gate to Source Forward Leakage (IGSS(F)) | 1 | µA | VGS=+20V |
| Gate to Source Reverse Leakage (IGSS(R)) | -1 | µA | VGS=-20V |
| Drain-to-Source On-Resistance (RDS(ON)) | 7 | mΩ | VGS=10V,ID=5A |
| Drain-to-Source On-Resistance (RDS(ON)) | 11 | mΩ | VGS=4.5V,ID=5.0A |
| Gate Threshold Voltage (VGS(TH)) | 1.3 | V | VDS=VGS,ID=250µA (Typ.) |
| Gate Threshold Voltage (VGS(TH)) | 1.0 - 2.5 | V | VDS=VGS,ID=250µA (Min. - Max.) |
| Dynamic Characteristics | |||
| Forward Transconductance (gfs) | 15 | S | VDS=5V,ID=10A |
| Input Capacitance (Ciss) | 1600 | pF | VGS=0V,VDS=15V,f=1.0MHz |
| Output Capacitance (Coss) | 300 | pF | VGS=0V,VDS=15V,f=1.0MHz |
| Reverse Transfer Capacitance (Crss) | 180 | pF | VGS=0V,VDS=15V,f=1.0MHz |
| Resistive Switching Characteristics | |||
| Turn-on Delay Time (td(ON)) | 30 | ns | ID=1A,VDD=25V,VGS=10V,RG=6Ω |
| Rise Time (tr) | 20 | ns | ID=1A,VDD=25V,VGS=10V,RG=6Ω |
| Turn-Off Delay Time (td(OFF)) | 100 | ns | ID=1A,VDD=25V,VGS=10V,RG=6Ω |
| Fall Time (tf) | 80 | ns | ID=1A,VDD=25V,VGS=10V,RG=6Ω |
| Total Gate Charge (Qg) | 10 | nC | ID=5A,VDD=30V,VGS=5V |
| Gate to Source Charge (Qgs) | 5 | nC | ID=5A,VDD=30V,VGS=5V |
| Gate to Drain (Miller)Charge (Qgd) | 3 | nC | ID=5A,VDD=30V,VGS=5V |
| Source-Drain Diode Characteristics | |||
| Continuous Source Current (Body Diode) (IS) | 10 | A | |
| Maximum Pulsed Current (Body Diode) (ISM) | 50 | A | |
| Diode Forward Voltage (VSD) | 1.5 | V | IS=10A,VGS=0V |
| Reverse Recovery Time (trr) | 100 | ns | IS=10A,Tj = 25°C, dIF/dt=100A/us, VGS=0V |
| Reverse Recovery Charge (Qrr) | 240 | nC | IS=10A,Tj = 25°C, dIF/dt=100A/us, VGS=0V |
| Thermal Characteristics | |||
| Junction-to-Ambient (RθJA) | 50 | °C/W | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!