| Drain to Source Voltage | 1.2kV |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 52mΩ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| Number | 1 N-channel |
| Pd - Power Dissipation | 278W |
| Input Capacitance(Ciss) | 2.44nF |
| Output Capacitance(Coss) | 171pF |
| Gate Charge(Qg) | 120nC |
| Description | 1.2kV 55A 52mΩ 4V 1 N-channel 278W TO-247-3 Single FETs, MOSFETs RoHS |
| Mfr. Part # | C2M0040120D |
| Package | TO-247-3 |
| Model Number | C2M0040120D |
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Product Specification
| Drain to Source Voltage | 1.2kV | Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 52mΩ |
| Gate Threshold Voltage (Vgs(th)) | 4V | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF | Number | 1 N-channel |
| Pd - Power Dissipation | 278W | Input Capacitance(Ciss) | 2.44nF |
| Output Capacitance(Coss) | 171pF | Gate Charge(Qg) | 120nC |
| Description | 1.2kV 55A 52mΩ 4V 1 N-channel 278W TO-247-3 Single FETs, MOSFETs RoHS | Mfr. Part # | C2M0040120D |
| Package | TO-247-3 | Model Number | C2M0040120D |
This document details the C2M0040120D, a power semiconductor device from Fuxinsemi, designed for high-performance applications. It provides comprehensive electrical characteristics, including output characteristics, on-resistance variations with temperature and current, transfer characteristics, body diode performance, threshold voltage, gate charge, and capacitance data across various operating conditions and temperatures. The device is suitable for applications requiring efficient power handling.
| Parameter | Conditions | Value |
|---|---|---|
| On Resistance, RDS(on) | IDS = 40 A, VGS = 15 V, tp < 200 s | (See Figure 4 & 6 for variations) |
| Drain-Source Current, IDS vs. Drain-Source Voltage, VDS | Tj = 150 C, tp = < 200 s | (See Figure 2) |
| Drain-Source Current, IDS vs. Drain-Source Voltage, VDS | Tj = -55 C, tp = < 200 s | (See Figure 1) |
| Drain-Source Current, IDS vs. Drain-Source Voltage, VDS | Tj = 25 C, tp = < 200 s | (See Figure 3) |
| On Resistance, RDS(on) vs. Junction Temperature, Tj | IDS = 40 A, tp < 200 s, VGS = 18 V | (See Figure 6) |
| On Resistance, RDS(on) vs. Drain Current, IDS | VGS = 15 V, tp < 200 s | (See Figure 5 for variations with temperature) |
| Gate-Source Voltage, VGS vs. Drain-Source Current, IDS | VDS = 20 V, tp < 200 s, TJ = 25 C | (See Figure 7 for variations with temperature) |
| Body Diode Characteristic | tp < 200 s | (See Figure 8 at -55C, Figure 9 at 25C, Figure 10 at 150C) |
| Threshold Voltage, Vth vs. Junction Temperature, Tj | VGS = VDS, IDS = 10 mA | (See Figure 11) |
| Gate Charge, QG | IDS = IGS = 50 mA, VDS = 40 A, TJ = 25 C | (See Figure 12 for variations with VGS) |
| Capacitances (Ciss, Coss, Crss) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | (See Figure 17 & 18 for variations with VDS) |
| 3rd Quadrant Characteristic | tp < 200 s | (See Figure 13 at -55C, Figure 14 at 25C, Figure 15 at 150C) |
| Output Capacitor Stored Energy, EOSS | (See Figure 16 for variations with VDS) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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