Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 44mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Pd - Power Dissipation | 150W |
| Input Capacitance(Ciss) | 2.7nF |
| Gate Charge(Qg) | 37nC@10V |
| Description | 100V 33A 44mΩ@10V 4V@250uA 1 N-channel 150W TO-220AB-3 Single FETs, MOSFETs RoHS |
| Mfr. Part # | GL540A8P |
| Package | TO-220AB-3 |
| Model Number | GL540A8P |
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Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 44mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | Number | 1 N-channel |
| Pd - Power Dissipation | 150W | Input Capacitance(Ciss) | 2.7nF |
| Gate Charge(Qg) | 37nC@10V | Description | 100V 33A 44mΩ@10V 4V@250uA 1 N-channel 150W TO-220AB-3 Single FETs, MOSFETs RoHS |
| Mfr. Part # | GL540A8P | Package | TO-220AB-3 |
| Model Number | GL540A8P |
The GL540A8P is a N-Channel Power MOSFET from GL Silicon, manufactured by Wuxi Guang Lei Electronic Technology Co., LTD. It utilizes advanced Planr technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. The MOSFET is housed in a TO-220AB package that complies with RoHS standards, offering high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent heat dissipation.
| Parameter | Test Conditions | Rating | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| General Description | ||||||
| Drain-to-Source Voltage (VDSS) | 100 | V | ||||
| Continuous Drain Current (ID) | 33 | A | ||||
| Pulsed Drain Current (IDM) | 132 | A | ||||
| Gate-to-Source Voltage (VGS) | 20 | V | ||||
| Power Dissipation (PD) | (Tc= 25) | 150 | W | |||
| Single Pulse Avalanche Energy (EAS) | (a5) | 750 | mJ | |||
| Operating Junction and Storage Temperature Range (TJ, Tstg) | 55 to 175 | 175 | ||||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||||
| OFF Characteristics | ||||||
| Drain to Source Breakdown Voltage (VDSS) | VGS=0V, ID=250A | 100 | V | 100 | -- | -- |
| Drain to Source Leakage Current (IDSS) | VDS=100V, VGS= 0V,Ta=25 | 1.0 | A | -- | -- | 1.0 |
| Gate to Source Forward Leakage (IGSS(F)) | VGS=+20V | 0.1 | A | -- | -- | 0.1 |
| Gate to Source Reverse Leakage (IGSS(R)) | VGS=-20V | -0.1 | A | -- | -- | -0.1 |
| ON Characteristics (a3) | ||||||
| Drain-to-Source On-Resistance (RDS(ON)) | VGS=10V,ID=17A | 44 | m | -- | 30 | 44 |
| Gate Threshold Voltage (VGS(TH)) | VDS=VGS,ID=250A | 4.0 | V | 2.0 | -- | 4.0 |
| Dynamic Characteristics (a4) | ||||||
| Forward Transconductance (gfs) | VDS=15V,ID=17A | 80 | S | -- | 80 | -- |
| Input Capacitance (Ciss) | VGS=0V,VDS=25V, f=1.0MHz | 2700 | pF | -- | 2700 | -- |
| Output Capacitance (Coss) | 300 | pF | -- | 300 | -- | |
| Reverse Transfer Capacitance (Crss) | 10 | pF | -- | 10 | -- | |
| Resistive Switching Characteristics (a4) | ||||||
| Turn-on Delay Time (td(ON)) | VDD=50V,ID=17A, VGS=10V,RG=9.1 | 18 | ns | -- | 18 | -- |
| Rise Time (tr) | 20 | ns | -- | 20 | -- | |
| Turn-Off Delay Time (td(OFF)) | 53 | ns | -- | 53 | -- | |
| Fall Time (tf) | 7 | ns | -- | 7 | -- | |
| Total Gate Charge (Qg) | VDD=50V, ID=17A, VGS=10V | 37 | nC | -- | 37 | -- |
| Gate to Source Charge (Qgs) | 11 | nC | -- | 11 | -- | |
| Gate to Drain (Miller)Charge (Qgd) | 8 | nC | -- | 8 | -- | |
| Source-Drain Diode Characteristics | ||||||
| Continuous Source Current (IS) | (a2(Body Diode)) | 33 | A | -- | -- | 33 |
| Diode Forward Voltage (VSD) | IS=33A,VGS=0V (a3) | 1.2 | V | -- | -- | 1.2 |
| Reverse recovery time (trr) | IF=33, diF/dt=100A/s | 150 | ns | -- | -- | 150 |
| Reverse recovery charge (Qrr) | 0.55 | uC | -- | -- | 0.55 | |
| Thermal Characteristics | ||||||
| Junction-to-Case (RJC) | (a2) | 1.0 | /W | 1.0 | ||
| Junction-to-Ambient (RJA) | (a1) | 62 | /W | 62 | ||
Notes:
(a1): Repetitive Rating: Pulse width limited by maximum junction temperature.
(a2): Surface Mounted on FR4 Board, t10sec.
(a3): Pulse Test: Pulse Width300s, Duty Cycle2%.
(a4): Guaranteed by design, not subject to production.
(a5): EAS conditionTj=25,VDD=35V,VG=10V,L=0.5mH,Rg=25 Test circurt
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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