Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 300V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 220mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF@25V |
| Input Capacitance(Ciss) | 1.9nF@25V |
| Pd - Power Dissipation | 45W |
| Gate Charge(Qg) | 33nC@10V |
| Description | 300V 18A 220mΩ@10V 4V@250uA 45W TO-220F Single FETs, MOSFETs RoHS |
| Mfr. Part # | GL18N30FA9 |
| Package | TO-220F |
| Model Number | GL18N30FA9 |
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Product Specification
| Drain to Source Voltage | 300V | Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 220mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF@25V | Input Capacitance(Ciss) | 1.9nF@25V |
| Pd - Power Dissipation | 45W | Gate Charge(Qg) | 33nC@10V |
| Description | 300V 18A 220mΩ@10V 4V@250uA 45W TO-220F Single FETs, MOSFETs RoHS | Mfr. Part # | GL18N30FA9 |
| Package | TO-220F | Model Number | GL18N30FA9 |
The GL18N30FA9 is a silicon N-channel Enhanced VDMOSFET developed using self-aligned planar technology. This design enhances switching performance, reduces conduction losses, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and higher efficiency. The device comes in a RoHS-compliant TO-220F package. Key features include fast switching, low ON resistance (Rdson 0.22), low gate charge, and low reverse transfer capacitances. It has undergone 100% single pulse avalanche energy testing. Typical applications include power switch circuits for adaptors and chargers.
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | 300 | V | |
| ID | Continuous Drain Current | 18 | A | |
| ID | Continuous Drain Current | TC=100 C | 11.2 | A |
| IDMa1 | Pulsed Drain Current | 72 | A | |
| VGS | Gate-to-Source Voltage | 30 | V | |
| EAS | Single Pulse Avalanche Energy | 850 | mJ | |
| EARa1 | Avalanche Energy, Repetitive | 90 | mJ | |
| IARa1 | Avalanche Current | 4.2 | A | |
| dv/dta3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 45 | W | |
| Derating Factor above 25C | 0.36 | W/ | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| Thermal Characteristics | ||||
| RJC | Thermal Resistance, Junction-to-Case | 2.78 | / W | |
| RJA | Thermal Resistance, Junction-to-Ambient | 62.5 | / W | |
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 300 | V |
| BVDSS/TJ | Bvdss Temperature Coefficient | ID=250uA,Reference25 | 0.55 | V/ |
| IDSS | Drain to Source Leakage Current | VDS=300V, VGS=0V,Ta=25 | 10 | A |
| VDS=240V, VGS=0V,Ta=125 | 100 | A | ||
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -100 | nA |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=10.0A | 0.17 - 0.22 | |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 2.0 - 4.0 | V |
| gfs | Forward Transconductance | VDS=15V,ID=9A | 13 | S |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | VGS=0V VDS=25V f=1.0MHz | 1900 | pF |
| Coss | Output Capacitance | 132 | pF | |
| Crss | Reverse Transfer Capacitance | 10 | pF | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | ID=9A,VDD=150V VGS=10V,Rg=6.1 | 26 | ns |
| tr | Rise Time | 18 | ns | |
| td(OFF) | Turn-Off Delay Time | 50 | ns | |
| tf | Fall Time | 22 | ns | |
| Qg | Total Gate Charge | ID=18A,VDD=150V VGS=10V | 33 | nC |
| Qgs | Gate to Source Charge | 8.8 | nC | |
| Qgd | Gate to Drain (Miller)Charge | 10 | nC | |
| Source-Drain Diode Characteristics | ||||
| ISD | Continuous Source Current (Body Diode) | 18 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | 72 | A | |
| VSD | Diode Forward Voltage | IS=18A,VGS=0V | 1.5 | V |
| trr | Reverse Recovery Time | IS=18A,Tj=25 dIF/dt=100A/s,VGS=0V | 360 | ns |
| Qrr | Reverse Recovery Charge | 3.8 | C | |
a1: Repetitive rating; pulse width limited by maximum junction temperature.
a3: L=10mH, ID=15A, Start TJ=25
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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