Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 1.25Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 5V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 79pF |
| Input Capacitance(Ciss) | 775pF |
| Pd - Power Dissipation | 7W |
| Gate Charge(Qg) | 19nC@10V |
| Description | N-Channel 500V 5A 7W Surface Mount TO-252 |
| Mfr. Part # | FMD5N50E5 |
| Package | TO-252 |
| Model Number | FMD5N50E5 |
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Product Specification
| Drain to Source Voltage | 500V | Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 1.25Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 5V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 79pF | Input Capacitance(Ciss) | 775pF |
| Pd - Power Dissipation | 7W | Gate Charge(Qg) | 19nC@10V |
| Description | N-Channel 500V 5A 7W Surface Mount TO-252 | Mfr. Part # | FMD5N50E5 |
| Package | TO-252 | Model Number | FMD5N50E5 |
The FMD5N50E5 is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances efficiency by reducing conduction loss, improving switching performance, and increasing avalanche energy. It is suitable for various power switching circuits, enabling system miniaturization and higher efficiency. The device comes in a RoHS-compliant TO-252 package.
Key features include a fast body diode that eliminates the need for external diodes in ZVS applications, lower gate charge for simpler drive requirements, and a higher gate voltage threshold for improved noise immunity.
| Parameter | Test Conditions | Min. | Typ. | Max. | Units | |
| Absolute Maximum Ratings (Tc=25C unless otherwise specified) | ||||||
| VDSS | Drain-to-Source Voltage | 500 | V | |||
| ID | Continuous Drain Current | 5 | A | |||
| ID | Continuous Drain Current (TC = 25C) | 5 | A | |||
| IDM | Pulsed Drain Current | 20 | A | |||
| VGS | Gate-to-Source Voltage | ±30 | V | |||
| EAS | Single Pulse Avalanche Energy | 3 | mJ | |||
| EAR | Avalanche Energy, Repetitive | 3 | mJ | |||
| IAR | Avalanche Current | 8 | A | |||
| dv/dt | Peak Diode Recovery dv/dt | 5 | V/ns | |||
| PD | Power Dissipation | 7 | W | |||
| Derating Factor above 25C | 0.05 | W/C | ||||
| TJ, Tstg | Operating Junction and Storage Temperature | -55 | 150 | C | ||
| TL | Maximum Temperature for Lead | 300 | C | |||
| OFF Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 500 | V | ||
| ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=250uA, Reference 25C | 0.55 | V/C | ||
| ID | Drain to Source Leakage Current | VDS =500V, VGS= 0V, Ta = 25C | 1 | µA | ||
| ID | Drain to Source Leakage Current | VDS =400V, VGS= 0V, Ta = 125C | 10 | µA | ||
| IGSS(F) | Gate to Source Forward Leakage | VGS= 30V | 100 | nA | ||
| IGSS(R) | Gate to Source Reverse Leakage | VGS =-30V | -100 | nA | ||
| ON Characteristics (Tc= 25C unless otherwise specified) | ||||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=2.5A | 1.25 | 1.5 | Ω | |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250µA | 3.0 | 5.0 | V | |
| Dynamic Characteristics | ||||||
| gfs | Forward Transconductance | VDS=15V, ID =2.5A | 5.0 | S | ||
| Ciss | Input Capacitance | VGS =0 V, VDS = 25V, f = 1.0MHz | 775 | pF | ||
| Coss | Output Capacitance | VGS =0 V, VDS = 25V, f = 1.0MHz | 79 | pF | ||
| Crss | Reverse Transfer Capacitance | VGS =0 V, VDS = 25V, f = 1.0MHz | 9.5 | pF | ||
| Resistive Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID =5A, VDD = 250V, RG =25Ω | 12 | ns | ||
| tr | Rise Time | ID =5A, VDD = 250V, RG =25Ω | 46 | ns | ||
| td(OFF) | Turn-Off Delay Time | ID =5A, VDD = 250V, RG =25Ω | 50 | ns | ||
| tf | Fall Time | ID =5A, VDD = 250V, RG =25Ω | 48 | ns | ||
| Qg | Total Gate Charge | ID = 5A, VDD =250V, VGS = 10V | 19 | nC | ||
| Qgs | Gate to Source Charge | ID = 5A, VDD =250V, VGS = 10V | 4.0 | nC | ||
| Qgd | Gate to Drain (Miller)Charge | ID = 5A, VDD =250V, VGS = 10V | 8.0 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) | 5 | A | |||
| ISM | Maximum Pulsed Current (Body Diode) | 20 | A | |||
| VSD | Diode Forward Voltage | IS=5.0A,VGS=0V | 1.5 | V | ||
| trr | Reverse Recovery Time | IS=5.0A, Tj = 25C, dIF/dt=100A/µs, VGS=0V | 85 | ns | ||
| Qrr | Reverse Recovery Charge | IS=5.0A, Tj = 25C, dIF/dt=100A/µs, VGS=0V | 265 | nC | ||
| Thermal Characteristics | ||||||
| RθJC | Junction-to-Case | 1.67 | °C/W | |||
| RθJA | Junction-to-Ambient | 62.5 | °C/W | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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