| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 190A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 4.2mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.314nF@25V |
| Number | - |
| Output Capacitance(Coss) | 1.254nF |
| Input Capacitance(Ciss) | 14.22nF |
| Pd - Power Dissipation | 200W |
| Gate Charge(Qg) | 280nC@10V |
| Description | 30V 190A 4.2mΩ@4.5V 3V@250uA 200W TO-263-2 Single FETs, MOSFETs RoHS |
| Mfr. Part # | HYG025P03LQ1B |
| Package | TO-263-2 |
| Model Number | HYG025P03LQ1B |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 190A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 4.2mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.314nF@25V | Number | - |
| Output Capacitance(Coss) | 1.254nF | Input Capacitance(Ciss) | 14.22nF |
| Pd - Power Dissipation | 200W | Gate Charge(Qg) | 280nC@10V |
| Description | 30V 190A 4.2mΩ@4.5V 3V@250uA 200W TO-263-2 Single FETs, MOSFETs RoHS | Mfr. Part # | HYG025P03LQ1B |
| Package | TO-263-2 | Model Number | HYG025P03LQ1B |
The HYG025P03LQ1P/B is a P-Channel Enhancement Mode MOSFET from Hymexa, designed for switching applications and power management in inverter systems and motor control. It features low on-state resistance (RDS(ON) as low as 2.3 m typ. at VGS = -10V), 100% avalanche tested, and is available in lead-free and green (RoHS compliant) versions. The device offers reliable and rugged performance.
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Static Characteristics | BVDSS | VGS=0V,IDS= -250A | -30 | - | - | V |
| IDSS | VDS= -30V,VGS=0V | - | - | -1 | A | |
| VGS(th) | VDS=VGS, IDS= -250A | -1.0 | -1.7 | -3.0 | V | |
| IGSS | VGS=20V,VDS=0V | - | - | 100 | nA | |
| RDS(ON) | VGS= -10V,IDS=-40A | - | 2.3 | 2.8 | m | |
| Diode Characteristics | VSD | ISD=-40A,VGS=0V | - | 0.86 | 1.2 | V |
| trr | ISD=-40A,dISD/dt=100A/s | - | 37 | - | ns | |
| Dynamic Characteristics | RG | VGS=0V,VDS=0V,F=1MHz | - | 2.5 | - | |
| Ciss | VGS=0V, VDS= -25V, Frequency=1.0MHz | - | 14220 | - | pF | |
| Coss | - | - | 1254 | - | pF | |
| Crss | - | - | 1314 | - | pF | |
| Gate Charge Characteristics | Qg | VGS= -10V, VDS = -24V, IDs= -40A | - | 280 | - | nC |
| Qg | VGS= -4.5V, VDS = -24V, IDs= -40A | - | 140 | - | nC | |
| Qgs | - | - | 55 | - | - | nC |
| Qgd | - | - | 60 | - | - | nC |
| Symbol | Parameter | Tc=25C Unless Otherwise Noted | Rating | Unit |
| VDSS | Drain-Source Voltage | - | -30 | V |
| VGSS | Gate-Source Voltage | - | 20 | V |
| TJ | Junction Temperature Range | - | -55 to 175 | C |
| TSTG | Storage Temperature Range | - | -55 to 175 | C |
| ID | Continuous Drain Current | Tc=25C | -190 | A |
| ID | Continuous Drain Current | Tc=100C | -134 | A |
| PD | Maximum Power Dissipation | Tc=25C | 200 | W |
| PD | Maximum Power Dissipation | Tc=100C | 100 | W |
| RJC | Thermal Resistance, Junction-to-Case | - | 0.75 | C/W |
| RJA | Thermal Resistance, Junction-to-Ambient | Surface mounted on 1in FR-4 board. | ** 62.5 | C/W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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