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Hefei Purple Horn E-Commerce Co., Ltd.

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China High cell density complementary MOSFET HUASHUO HSBA4903 series with RoHS and
China High cell density complementary MOSFET HUASHUO HSBA4903 series with RoHS and

  1. China High cell density complementary MOSFET HUASHUO HSBA4903 series with RoHS and

High cell density complementary MOSFET HUASHUO HSBA4903 series with RoHS and

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Drain to Source Voltage 40V
Current - Continuous Drain(Id) 26A
RDS(on) 70mΩ@4.5V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA
Type N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds) 80pF
Number 1 N-Channel + 1 P-Channel
Output Capacitance(Coss) 108pF
Input Capacitance(Ciss) 1.004nF
Pd - Power Dissipation 35W
Gate Charge(Qg) 6nC@4.5V
Description N-Channel+P-Channel Array 40V 26A 35W PRPAK5x6-8L
Mfr. Part # HSBA4903
Package PRPAK5x6-8L
Model Number HSBA4903

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  1. Product Details
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Product Specification

Drain to Source Voltage 40V Current - Continuous Drain(Id) 26A
RDS(on) 70mΩ@4.5V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA Type N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds) 80pF Number 1 N-Channel + 1 P-Channel
Output Capacitance(Coss) 108pF Input Capacitance(Ciss) 1.004nF
Pd - Power Dissipation 35W Gate Charge(Qg) 6nC@4.5V
Description N-Channel+P-Channel Array 40V 26A 35W PRPAK5x6-8L Mfr. Part # HSBA4903
Package PRPAK5x6-8L Model Number HSBA4903

Product Overview

The HSBA4903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSBA4903 series is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval.

Product Attributes

  • Brand: HS-Semi
  • Product Line: HSBA4903
  • Compliance: RoHS, Green Product
  • Key Feature: 100% EAS Guaranteed
  • Technology: Advanced high cell density Trench technology

Technical Specifications

Symbol Parameter N-Ch Rating P-Ch Rating Units Conditions Min. Typ. Max.
VDS Drain-Source Voltage 40 -40 V VGS=0V 40 --- ---
--- --- V VGS=0V , ID=250uA --- --- ---
VGS Gate-Source Voltage 20 V --- --- --- ---
--- --- V VGS=20V , VDS=0V --- --- 100
ID@TC=25 Continuous Drain Current, VGS @ 10V1 26 -25 A TC=25 --- --- ---
--- --- A VG=VD=0V , Force Current1,5 --- --- 23
ID@TC=100 Continuous Drain Current, VGS @ 10V1 18 -16 A TC=100 --- --- ---
--- --- A VG=VD=0V , Force Current1,5 --- --- -20
IDM Pulsed Drain Current2 47 -46 A Pulsed --- --- ---
--- --- A Pulsed2,5 --- --- 46
EAS Single Pulse Avalanche Energy3 28 66 mJ Single Pulse --- --- ---
--- --- mJ VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A --- --- ---
IAS Avalanche Current 17.8 -27.2 A --- --- --- ---
--- --- A VDD=-25V,VGS=-10V,L=0.1mH --- --- ---
PD@TC=25 Total Power Dissipation4 35 W TC=25 --- --- ---
--- --- W Limited by 150 junction temperature --- --- ---
TSTG Storage Temperature Range -55 to 150 --- -55 --- 150
TJ Operating Junction Temperature Range -55 to 150 --- -55 --- 150
RJA Thermal Resistance Junction-Ambient --- 62 /W --- --- ---
RJC Thermal Resistance Junction-Case1 --- 3.5 /W --- --- ---
BVDSS Drain-Source Breakdown Voltage 40 -40 V VGS=0V , ID=250uA 40 --- ---
BVDSS/TJ BVDSS Temperature Coefficient --- --- V/ Reference to 25 , ID=1mA --- 0.034 ---
RDS(ON) Static Drain-Source On-Resistance2 --- --- m VGS=10V , ID=12A --- --- 30
RDS(ON) Static Drain-Source On-Resistance2 --- --- m VGS=-10V , ID=-8A --- --- 45
RDS(ON) Static Drain-Source On-Resistance2 --- --- m VGS=4.5V , ID=10A --- --- 50
VGS(th) Gate Threshold Voltage --- --- V VGS=VDS , ID =250uA 1.0 1.5 2.5
VGS(th) Gate Threshold Voltage --- --- V VGS=VDS , ID =-250uA -1.0 -1.6 -2.5
VGS(th) VGS(th) Temperature Coefficient --- --- mV/ --- --- -4.56 ---
VGS(th) VGS(th) Temperature Coefficient --- --- mV/ --- --- 4.32 ---
IDSS Drain-Source Leakage Current --- --- uA VDS=32V , VGS=0V , TJ=25 --- --- 1
IDSS Drain-Source Leakage Current --- --- uA VDS=-32V , VGS=0V , TJ=25 --- --- 1
IDSS Drain-Source Leakage Current --- --- uA VDS=32V , VGS=0V , TJ=55 --- --- 5
IDSS Drain-Source Leakage Current --- --- uA VDS=-32V , VGS=0V , TJ=55 --- --- 5
IGSS Gate-Source Leakage Current 100 nA VGS=20V , VDS=0V --- --- ---
gfs Forward Transconductance --- --- S VDS=5V , ID=12A --- 8 ---
gfs Forward Transconductance --- --- S VDS=-5V , ID=-8A --- 12.6 ---
Rg Gate Resistance --- --- VDS=0V , VGS=0V , f=1MHz --- 2.6 5.2
Rg Gate Resistance --- --- VDS=0V , VGS=0V , f=1MHz --- 13 16
Qg Total Gate Charge (4.5V) --- --- nC VDS=20V , VGS=4.5V , ID=12A --- 5.5 ---
Qg Total Gate Charge (-4.5V) --- --- nC VDS=-20V , VGS=-4.5V , ID=-12A --- 9 ---
Qgs Gate-Source Charge --- --- nC --- --- 1.25 ---
Qgs Gate-Source Charge --- --- nC --- --- 2.54 ---
Qgd Gate-Drain Charge --- --- nC --- --- 2.5 ---
Qgd Gate-Drain Charge --- --- nC --- --- 3.1 ---
Td(on) Turn-On Delay Time --- --- ns VDD=20V , VGS=10V , RG=3.3 ID=1A --- 8.9 ---
Td(on) Turn-On Delay Time --- --- ns VDD=-15V , VGS=-10V , RG=3.3, ID=-1A --- 19.2 ---
Tr Rise Time --- --- ns --- --- 2.2 ---
Tr Rise Time --- --- ns --- --- 12.8 ---
Td(off) Turn-Off Delay Time --- --- ns --- --- 41 ---
Td(off) Turn-Off Delay Time --- --- ns --- --- 48.6 ---
Tf Fall Time --- --- ns --- --- 2.7 ---
Tf Fall Time --- --- ns --- --- 4.6 ---
Ciss Input Capacitance --- --- pF VDS=15V , VGS=0V , f=1MHz --- 593 ---
Ciss Input Capacitance --- --- pF VDS=-15V , VGS=0V , f=1MHz --- 1004 ---
Coss Output Capacitance --- --- pF --- --- 76 ---
Coss Output Capacitance --- --- pF --- --- 108 ---
Crss Reverse Transfer Capacitance --- --- pF --- --- 56 ---
Crss Reverse Transfer Capacitance --- --- pF --- --- 80 ---
VSD Diode Forward Voltage2 --- --- V VGS=0V , IS=1A , TJ=25 --- --- 1.2
VSD Diode Forward Voltage2 --- --- V VGS=0V , IS=-1A , TJ=25 --- --- -1

Notes:

  1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
  3. The EAS data shows Max. rating. The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A (N-Ch) or VDD=-25V,VGS=-10V,L=0.1mH,IAS=-27.2A (P-Ch).
  4. The power dissipation is limited by 150 junction temperature.
  5. The data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

2410121523_HUASHUO-HSBA4903_C2987719.pdf

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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