| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 26A |
| RDS(on) | 70mΩ@4.5V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| Number | 1 N-Channel + 1 P-Channel |
| Output Capacitance(Coss) | 108pF |
| Input Capacitance(Ciss) | 1.004nF |
| Pd - Power Dissipation | 35W |
| Gate Charge(Qg) | 6nC@4.5V |
| Description | N-Channel+P-Channel Array 40V 26A 35W PRPAK5x6-8L |
| Mfr. Part # | HSBA4903 |
| Package | PRPAK5x6-8L |
| Model Number | HSBA4903 |
View Detail Information
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Product Specification
| Drain to Source Voltage | 40V | Current - Continuous Drain(Id) | 26A |
| RDS(on) | 70mΩ@4.5V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA | Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | Number | 1 N-Channel + 1 P-Channel |
| Output Capacitance(Coss) | 108pF | Input Capacitance(Ciss) | 1.004nF |
| Pd - Power Dissipation | 35W | Gate Charge(Qg) | 6nC@4.5V |
| Description | N-Channel+P-Channel Array 40V 26A 35W PRPAK5x6-8L | Mfr. Part # | HSBA4903 |
| Package | PRPAK5x6-8L | Model Number | HSBA4903 |
The HSBA4903 is a high-performance complementary N-channel and P-channel MOSFET series featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. The HSBA4903 series is RoHS and Green Product compliant, with 100% EAS guaranteed and full function reliability approval.
| Symbol | Parameter | N-Ch Rating | P-Ch Rating | Units | Conditions | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 40 | -40 | V | VGS=0V | 40 | --- | --- |
| --- | --- | V | VGS=0V , ID=250uA | --- | --- | --- | ||
| VGS | Gate-Source Voltage | 20 | V | --- | --- | --- | --- | |
| --- | --- | V | VGS=20V , VDS=0V | --- | --- | 100 | ||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 26 | -25 | A | TC=25 | --- | --- | --- |
| --- | --- | A | VG=VD=0V , Force Current1,5 | --- | --- | 23 | ||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 18 | -16 | A | TC=100 | --- | --- | --- |
| --- | --- | A | VG=VD=0V , Force Current1,5 | --- | --- | -20 | ||
| IDM | Pulsed Drain Current2 | 47 | -46 | A | Pulsed | --- | --- | --- |
| --- | --- | A | Pulsed2,5 | --- | --- | 46 | ||
| EAS | Single Pulse Avalanche Energy3 | 28 | 66 | mJ | Single Pulse | --- | --- | --- |
| --- | --- | mJ | VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A | --- | --- | --- | ||
| IAS | Avalanche Current | 17.8 | -27.2 | A | --- | --- | --- | --- |
| --- | --- | A | VDD=-25V,VGS=-10V,L=0.1mH | --- | --- | --- | ||
| PD@TC=25 | Total Power Dissipation4 | 35 | W | TC=25 | --- | --- | --- | |
| --- | --- | W | Limited by 150 junction temperature | --- | --- | --- | ||
| TSTG | Storage Temperature Range | -55 to 150 | --- | -55 | --- | 150 | ||
| TJ | Operating Junction Temperature Range | -55 to 150 | --- | -55 | --- | 150 | ||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | --- | --- | --- | |
| RJC | Thermal Resistance Junction-Case1 | --- | 3.5 | /W | --- | --- | --- | |
| BVDSS | Drain-Source Breakdown Voltage | 40 | -40 | V | VGS=0V , ID=250uA | 40 | --- | --- |
| BVDSS/TJ | BVDSS Temperature Coefficient | --- | --- | V/ | Reference to 25 , ID=1mA | --- | 0.034 | --- |
| RDS(ON) | Static Drain-Source On-Resistance2 | --- | --- | m | VGS=10V , ID=12A | --- | --- | 30 |
| RDS(ON) | Static Drain-Source On-Resistance2 | --- | --- | m | VGS=-10V , ID=-8A | --- | --- | 45 |
| RDS(ON) | Static Drain-Source On-Resistance2 | --- | --- | m | VGS=4.5V , ID=10A | --- | --- | 50 |
| VGS(th) | Gate Threshold Voltage | --- | --- | V | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 |
| VGS(th) | Gate Threshold Voltage | --- | --- | V | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 |
| VGS(th) | VGS(th) Temperature Coefficient | --- | --- | mV/ | --- | --- | -4.56 | --- |
| VGS(th) | VGS(th) Temperature Coefficient | --- | --- | mV/ | --- | --- | 4.32 | --- |
| IDSS | Drain-Source Leakage Current | --- | --- | uA | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 |
| IDSS | Drain-Source Leakage Current | --- | --- | uA | VDS=-32V , VGS=0V , TJ=25 | --- | --- | 1 |
| IDSS | Drain-Source Leakage Current | --- | --- | uA | VDS=32V , VGS=0V , TJ=55 | --- | --- | 5 |
| IDSS | Drain-Source Leakage Current | --- | --- | uA | VDS=-32V , VGS=0V , TJ=55 | --- | --- | 5 |
| IGSS | Gate-Source Leakage Current | 100 | nA | VGS=20V , VDS=0V | --- | --- | --- | |
| gfs | Forward Transconductance | --- | --- | S | VDS=5V , ID=12A | --- | 8 | --- |
| gfs | Forward Transconductance | --- | --- | S | VDS=-5V , ID=-8A | --- | 12.6 | --- |
| Rg | Gate Resistance | --- | --- | VDS=0V , VGS=0V , f=1MHz | --- | 2.6 | 5.2 | |
| Rg | Gate Resistance | --- | --- | VDS=0V , VGS=0V , f=1MHz | --- | 13 | 16 | |
| Qg | Total Gate Charge (4.5V) | --- | --- | nC | VDS=20V , VGS=4.5V , ID=12A | --- | 5.5 | --- |
| Qg | Total Gate Charge (-4.5V) | --- | --- | nC | VDS=-20V , VGS=-4.5V , ID=-12A | --- | 9 | --- |
| Qgs | Gate-Source Charge | --- | --- | nC | --- | --- | 1.25 | --- |
| Qgs | Gate-Source Charge | --- | --- | nC | --- | --- | 2.54 | --- |
| Qgd | Gate-Drain Charge | --- | --- | nC | --- | --- | 2.5 | --- |
| Qgd | Gate-Drain Charge | --- | --- | nC | --- | --- | 3.1 | --- |
| Td(on) | Turn-On Delay Time | --- | --- | ns | VDD=20V , VGS=10V , RG=3.3 ID=1A | --- | 8.9 | --- |
| Td(on) | Turn-On Delay Time | --- | --- | ns | VDD=-15V , VGS=-10V , RG=3.3, ID=-1A | --- | 19.2 | --- |
| Tr | Rise Time | --- | --- | ns | --- | --- | 2.2 | --- |
| Tr | Rise Time | --- | --- | ns | --- | --- | 12.8 | --- |
| Td(off) | Turn-Off Delay Time | --- | --- | ns | --- | --- | 41 | --- |
| Td(off) | Turn-Off Delay Time | --- | --- | ns | --- | --- | 48.6 | --- |
| Tf | Fall Time | --- | --- | ns | --- | --- | 2.7 | --- |
| Tf | Fall Time | --- | --- | ns | --- | --- | 4.6 | --- |
| Ciss | Input Capacitance | --- | --- | pF | VDS=15V , VGS=0V , f=1MHz | --- | 593 | --- |
| Ciss | Input Capacitance | --- | --- | pF | VDS=-15V , VGS=0V , f=1MHz | --- | 1004 | --- |
| Coss | Output Capacitance | --- | --- | pF | --- | --- | 76 | --- |
| Coss | Output Capacitance | --- | --- | pF | --- | --- | 108 | --- |
| Crss | Reverse Transfer Capacitance | --- | --- | pF | --- | --- | 56 | --- |
| Crss | Reverse Transfer Capacitance | --- | --- | pF | --- | --- | 80 | --- |
| VSD | Diode Forward Voltage2 | --- | --- | V | VGS=0V , IS=1A , TJ=25 | --- | --- | 1.2 |
| VSD | Diode Forward Voltage2 | --- | --- | V | VGS=0V , IS=-1A , TJ=25 | --- | --- | -1 |
Notes:
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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