Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 95A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 5.3mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 1.342nF |
| Pd - Power Dissipation | 83.3W |
| Input Capacitance(Ciss) | 3.744nF |
| Gate Charge(Qg) | 73nC@10V |
| Description | N-Channel 100V 95A 83.3W Surface Mount PDFN5x6-8L |
| Mfr. Part # | HYG053N10NS1C2 |
| Package | PDFN5x6-8L |
| Model Number | HYG053N10NS1C2 |
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Product Specification
| Drain to Source Voltage | 100V | Current - Continuous Drain(Id) | 95A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 5.3mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 153pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 1.342nF | Pd - Power Dissipation | 83.3W |
| Input Capacitance(Ciss) | 3.744nF | Gate Charge(Qg) | 73nC@10V |
| Description | N-Channel 100V 95A 83.3W Surface Mount PDFN5x6-8L | Mfr. Part # | HYG053N10NS1C2 |
| Package | PDFN5x6-8L | Model Number | HYG053N10NS1C2 |
The HYG053N10NS1C2 is an N-Channel Enhancement Mode MOSFET designed for switching applications and power management in inverter systems. It offers a high current capability of 100V/95A with a low on-resistance of 4.6 m (typ.) at VGS = 10V. This device is 100% avalanche tested, ensuring reliability and ruggedness. Halogen-free devices are available and compliant with RoHS standards.
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 100 | V |
| Gate-Source Voltage | VGSS | Tc=25C Unless Otherwise Noted | - | - | ±20 | V |
| Junction Temperature Range | TJ | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Storage Temperature Range | TSTG | Tc=25C Unless Otherwise Noted | -55 | - | 175 | °C |
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | - | - | 95 | A |
| Pulsed Drain Current | IDM | Tc=25°C | - | - | 350 | A |
| Continuous Drain Current | ID | Tc=25°C | - | - | 95 | A |
| Continuous Drain Current | ID | Tc=100°C | - | - | 71.5 | A |
| Maximum Power Dissipation | PD | Tc=25°C | - | - | 83.3 | W |
| Maximum Power Dissipation | PD | Tc=100°C | - | - | 41.7 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 1.8 | - | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | Surface mounted on 1in2 FR-4 board. | - | 45 | - | °C/W |
| Single Pulsed Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V. | - | 305 | - | mJ |
| Electrical Characteristics (Tc =25°C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,IDS= 250μA | 100 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS= 100V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS= 250μA | 2 | 3 | 4 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS= 10V,IDS=20A | - | 4.6 | 5.3 | mΩ |
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | - | 0.82 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/μs | - | 55 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 104 | - | nC |
| Dynamic Characteristics (Tc =25°C Unless Otherwise Noted) | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V,F=1MHz | - | 2.3 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 3744 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 1342 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS= 25V, Frequency=1.0MHz | - | 153 | - | pF |
| Turn-on Delay Time | td(ON) | VDD= 50V,RG=4.0Ω, IDS= 20A,VGS= 10V | - | 20 | - | ns |
| Turn-on Rise Time | Tr | VDD= 50V,RG=4.0Ω, IDS= 20A,VGS= 10V | - | 53 | - | ns |
| Turn-off Delay Time | td(OFF) | VDD= 50V,RG=4.0Ω, IDS= 20A,VGS= 10V | - | 58 | - | ns |
| Turn-off Fall Time | Tf | VDD= 50V,RG=4.0Ω, IDS= 20A,VGS= 10V | - | 47 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VDS = 80V, VGS= 10V, IDs= 20A | - | 73 | - | nC |
| Gate-Source Charge | Qgs | VDS = 80V, VGS= 10V, IDs= 20A | - | 20 | - | nC |
| Gate-Drain Charge | Qgd | VDS = 80V, VGS= 10V, IDs= 20A | - | 23 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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