Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 125A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 2.8mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 462pF |
| Number | 1 N-channel |
| Output Capacitance(Coss) | 561pF |
| Input Capacitance(Ciss) | 4.71nF |
| Pd - Power Dissipation | 62.5W |
| Gate Charge(Qg) | 93nC |
| Description | N-Channel 30V 125A 62.5W Surface Mount DFN-8(5.2x5.9) |
| Mfr. Part # | HYG023N03LR1C2 |
| Package | DFN5x6-8L |
| Model Number | HYG023N03LR1C2 |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 125A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 2.8mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 462pF | Number | 1 N-channel |
| Output Capacitance(Coss) | 561pF | Input Capacitance(Ciss) | 4.71nF |
| Pd - Power Dissipation | 62.5W | Gate Charge(Qg) | 93nC |
| Description | N-Channel 30V 125A 62.5W Surface Mount DFN-8(5.2x5.9) | Mfr. Part # | HYG023N03LR1C2 |
| Package | DFN5x6-8L | Model Number | HYG023N03LR1C2 |
The HYG023N03LR1C2 is a single N-Channel enhancement mode MOSFET designed for switching applications and power management in DC/DC converters. It offers high performance with low on-state resistance (RDS(ON)) at various gate-source voltages and is 100% avalanche tested for reliability and ruggedness. Halogen-free options are available.
| Parameter | Symbol | Test Conditions | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | Tc=25C Unless Otherwise Noted | - | - | 30 | V |
| Gate-Source Voltage | VGSS | - | - | ±20 | V | |
| Maximum Junction Temperature | TJ | - | -55 | - | 175 | °C |
| Storage Temperature Range | TSTG | - | -55 | - | 175 | °C |
| Source Current-Continuous (Body Diode) | IS | Tc=25°C, Mounted on Large Heat Sink | - | - | 125 | A |
| Pulsed Drain Current | IDM | Tc=25°C | - | - | 500 | A |
| Continuous Drain Current | ID | Tc=25°C | - | - | 125 | A |
| Continuous Drain Current | ID | Tc=100°C | - | - | 88 | A |
| Maximum Power Dissipation | PD | Tc=25°C | - | - | 62.5 | W |
| Maximum Power Dissipation | PD | Tc=100°C | - | - | 31.2 | W |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 2.4 | - | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | Surface mounted on FR-4 board | - | 45 | - | °C/W |
| Single Pulsed-Avalanche Energy | EAS | L=0.3mH, Limited by TJmax, starting TJ=25°C | - | 329 | - | mJ |
| Electrical Characteristics (Tc =25°C Unless Otherwise Noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, IDS=250μA | 30 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=30V,VGS=0V | - | - | 1 | μA |
| Drain-to-Source Leakage Current | IDSS | TJ=125°C | - | - | 50 | μA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250μA | 1.0 | 1.7 | 3.0 | V |
| Gate-Source Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V,IDS=20A | - | 1.5 | 2.0 | mΩ |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V,IDS=20A | - | 2.1 | 2.8 | mΩ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | ISD=20A,VGS=0V | - | 0.86 | 1.2 | V |
| Reverse Recovery Time | trr | ISD=20A,dISD/dt=100A/μs | - | 21.2 | - | ns |
| Reverse Recovery Charge | Qrr | - | - | 13.1 | - | nC |
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V, Frequency=1.0MHz | - | 2.3 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, Frequency=1.0MHz | - | 4710 | - | pF |
| Output Capacitance | Coss | - | - | 561 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 462 | - | pF |
| Turn-on Delay Time | td(ON) | VDD=15V,RG=2.5Ω, IDS=20A,VGS=10V | - | 13 | - | ns |
| Turn-on Rise Time | Tr | - | - | 64 | - | ns |
| Turn-off Delay Time | td(OFF) | - | - | 96 | - | ns |
| Turn-off Fall Time | Tf | - | - | 86 | - | ns |
| Gate Charge Characteristics | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS =24V, ID=20A | - | 93 | - | nC |
| Total Gate Charge | Qg | VGS=4.5V | - | 48 | - | nC |
| Gate-Source Charge | Qgs | - | - | 11.1 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 23.9 | - | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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