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Hefei Purple Horn E-Commerce Co., Ltd.

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China 40V P channel MOSFET HUASHUO HSCE4117 featuring trench technology and low RDS ON
China 40V P channel MOSFET HUASHUO HSCE4117 featuring trench technology and low RDS ON

  1. China 40V P channel MOSFET HUASHUO HSCE4117 featuring trench technology and low RDS ON
  2. China 40V P channel MOSFET HUASHUO HSCE4117 featuring trench technology and low RDS ON
  3. China 40V P channel MOSFET HUASHUO HSCE4117 featuring trench technology and low RDS ON

40V P channel MOSFET HUASHUO HSCE4117 featuring trench technology and low RDS ON

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Drain to Source Voltage 40V
Current - Continuous Drain(Id) 50A
RDS(on) 8.2mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1.65V
Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 225pF
Number 1 P-Channel
Pd - Power Dissipation 52W
Input Capacitance(Ciss) 3.67nF
Output Capacitance(Coss) 313pF
Gate Charge(Qg) 59nC@10V
Description 40V 50A 8.2mΩ@10V 1.65V 1 P-Channel 52W DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS
Mfr. Part # HSCE4117
Package DFN-8(3.3x3.3)
Model Number HSCE4117

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 40V Current - Continuous Drain(Id) 50A
RDS(on) 8.2mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1.65V Type P-Channel
Reverse Transfer Capacitance (Crss@Vds) 225pF Number 1 P-Channel
Pd - Power Dissipation 52W Input Capacitance(Ciss) 3.67nF
Output Capacitance(Coss) 313pF Gate Charge(Qg) 59nC@10V
Description 40V 50A 8.2mΩ@10V 1.65V 1 P-Channel 52W DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS Mfr. Part # HSCE4117
Package DFN-8(3.3x3.3) Model Number HSCE4117

Product Overview

The HSCE4117 is a P-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device.

Product Attributes

  • Brand: HS-Semi
  • Technology: Trench P-channel MOSFET
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -40 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V -50 A
ID@TC=100 Continuous Drain Current, VGS @ -10V -39 A
IDM Pulsed Drain Current -200 A
EAS Single Pulse Avalanche Energy 360 mJ
IAS Avalanche Current -56 A
PD@TC=25 Total Power Dissipation 52 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient 55 /W
RJC Thermal Resistance Junction-Case 2.4 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 V
RDS(ON),typ Static Drain-Source On-Resistance VGS=-10V , ID=-20A 8.2 10 m
RDS(ON),typ Static Drain-Source On-Resistance VGS=-4.5V , ID=-15A 10.5 12.5 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.65 -2.5 V
IDSS Drain-Source Leakage Current VDS=-40V , VGS=0V , TJ=25 1 uA
IDSS Drain-Source Leakage Current VDS=-40V , VGS=0V , TJ=55 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V 100 nA
gfs Forward Transconductance VDS=-5V , ID=-10A 48 S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 10.6
Qg Total Gate Charge VDS=-20V , VGS=-10V , ID=-10A 59 nC
Qgs Gate-Source Charge 8.7
Qgd Gate-Drain Charge 15
Td(on) Turn-On Delay Time VDD=-20V , VGS=-10V , RG=3.3, ID=-10A 16 ns
Tr Rise Time 42 ns
Td(off) Turn-Off Delay Time 170 ns
Tf Fall Time 96 ns
Ciss Input Capacitance VDS=-20V , VGS=0V , f=1MHz 3670 pF
Coss Output Capacitance 313 pF
Crss Reverse Transfer Capacitance 225 pF
Diode Characteristics
IS Continuous Source Current VG=VD=0V , Force Current -50 A
ISM Pulsed Source Current -200 A
VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25 -1.2 V
trr Reverse Recovery Time If=20A,dI/dt=100A/us 15 ns
Qrr Reverse Recovery Charge If=20A,dI/dt=100A/us 4.7 nC
Ordering Information
Part Number Package code Packaging
HSCE4117 DFN3.3*3.3 3000/Tape&Reel

2508281825_HUASHUO-HSCE4117_C51025846.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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