| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 50A |
| RDS(on) | 8.2mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.65V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| Number | 1 P-Channel |
| Pd - Power Dissipation | 52W |
| Input Capacitance(Ciss) | 3.67nF |
| Output Capacitance(Coss) | 313pF |
| Gate Charge(Qg) | 59nC@10V |
| Description | 40V 50A 8.2mΩ@10V 1.65V 1 P-Channel 52W DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS |
| Mfr. Part # | HSCE4117 |
| Package | DFN-8(3.3x3.3) |
| Model Number | HSCE4117 |
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Product Specification
| Drain to Source Voltage | 40V | Current - Continuous Drain(Id) | 50A |
| RDS(on) | 8.2mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.65V | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF | Number | 1 P-Channel |
| Pd - Power Dissipation | 52W | Input Capacitance(Ciss) | 3.67nF |
| Output Capacitance(Coss) | 313pF | Gate Charge(Qg) | 59nC@10V |
| Description | 40V 50A 8.2mΩ@10V 1.65V 1 P-Channel 52W DFN-8(3.3x3.3) Single FETs, MOSFETs RoHS | Mfr. Part # | HSCE4117 |
| Package | DFN-8(3.3x3.3) | Model Number | HSCE4117 |
The HSCE4117 is a P-channel, 40V fast switching MOSFET designed with high cell density trench technology. It offers excellent RDS(ON) and gate charge, making it suitable for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and availability as a green device.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V | -50 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V | -39 | A | |||
| IDM | Pulsed Drain Current | -200 | A | |||
| EAS | Single Pulse Avalanche Energy | 360 | mJ | |||
| IAS | Avalanche Current | -56 | A | |||
| PD@TC=25 | Total Power Dissipation | 52 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | 55 | /W | |||
| RJC | Thermal Resistance Junction-Case | 2.4 | /W | |||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -40 | V | ||
| RDS(ON),typ | Static Drain-Source On-Resistance | VGS=-10V , ID=-20A | 8.2 | 10 | m | |
| RDS(ON),typ | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-15A | 10.5 | 12.5 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.0 | -1.65 | -2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=-40V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-40V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-10A | 48 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 10.6 | |||
| Qg | Total Gate Charge | VDS=-20V , VGS=-10V , ID=-10A | 59 | nC | ||
| Qgs | Gate-Source Charge | 8.7 | ||||
| Qgd | Gate-Drain Charge | 15 | ||||
| Td(on) | Turn-On Delay Time | VDD=-20V , VGS=-10V , RG=3.3, ID=-10A | 16 | ns | ||
| Tr | Rise Time | 42 | ns | |||
| Td(off) | Turn-Off Delay Time | 170 | ns | |||
| Tf | Fall Time | 96 | ns | |||
| Ciss | Input Capacitance | VDS=-20V , VGS=0V , f=1MHz | 3670 | pF | ||
| Coss | Output Capacitance | 313 | pF | |||
| Crss | Reverse Transfer Capacitance | 225 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -50 | A | ||
| ISM | Pulsed Source Current | -200 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| trr | Reverse Recovery Time | If=20A,dI/dt=100A/us | 15 | ns | ||
| Qrr | Reverse Recovery Charge | If=20A,dI/dt=100A/us | 4.7 | nC | ||
| Ordering Information | ||||||
| Part Number | Package code | Packaging | ||||
| HSCE4117 | DFN3.3*3.3 | 3000/Tape&Reel | ||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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