| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 2Ω@10V,0.1A |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| Number | 1 N-channel |
| Pd - Power Dissipation | 350mW |
| Input Capacitance(Ciss) | 50pF |
| Gate Charge(Qg) | 3nC@4.5V |
| Description | N-Channel 60V 0.3A 0.35W Surface Mount SOT-23 |
| Mfr. Part # | 2N7002-HXY |
| Package | SOT-23 |
| Model Number | 2N7002-HXY |
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Product Specification
| Drain to Source Voltage | 60V | Current - Continuous Drain(Id) | 300mA |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 2Ω@10V,0.1A |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| Number | 1 N-channel | Pd - Power Dissipation | 350mW |
| Input Capacitance(Ciss) | 50pF | Gate Charge(Qg) | 3nC@4.5V |
| Description | N-Channel 60V 0.3A 0.35W Surface Mount SOT-23 | Mfr. Part # | 2N7002-HXY |
| Package | SOT-23 | Model Number | 2N7002-HXY |
The 2N7002-HXY is an N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is suitable for battery protection and other switching applications.
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | 68 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=10V,VDS=0V | - | 100 | 500 | nA |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 4 | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 0.7 | 1.2 | 1.9 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=5V, ID=0.1A | - | 1.3 | 3 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=0.1A | - | 1 | 2 | |
| Forward Transconductance | gFS | VDS=10V,ID=0.2A | 0.1 | - | - | S |
| Input Capacitance | Clss | VDS=25V,VGS=0V, F=1.0MHz | - | 21 | 50 | PF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, F=1.0MHz | - | 11 | 25 | PF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, F=1.0MHz | - | 4.2 | 5 | PF |
| Turn-on Delay Time | td(on) | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 10 | - | nS |
| Turn-on Rise Time | tr | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 50 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 17 | - | nS |
| Turn-Off Fall Time | tf | VDD=30V,ID=0.2A VGS=10V,RGEN=10 | - | 10 | - | nS |
| Total Gate Charge | Qg | VDS=10V,ID=0.3A, VGS=4.5V | - | 1.7 | 3 | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=0.2A | - | - | 1.2 | V |
| Diode Forward Current | IS | VGS=0V,IS=0.2A | - | - | 0.3 | A |
| Drain-Source Voltage | VDS | - | - | 60 | V | |
| Gate-Source Voltage | VGS | - | - | 20 | V | |
| Continuous Drain Current | ID | TA =25 (TJ =150) | - | 0.3 | - | A |
| Continuous Drain Current | ID | TA =100 | - | 0.19 | - | A |
| Drain Current-Pulsed | IDM | (Note 1) | - | - | 0.8 | A |
| Maximum Power Dissipation | PD | - | - | 0.35 | W | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | ||
| Thermal Resistance,Junction-to-Ambient | RJA | (Note 2) | - | 350 | - | /W |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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