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Hefei Purple Horn E-Commerce Co., Ltd.

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China N Channel Enhancement Mode MOSFET HUAYI HY1906D Designed for Inverter Systems
China N Channel Enhancement Mode MOSFET HUAYI HY1906D Designed for Inverter Systems

  1. China N Channel Enhancement Mode MOSFET HUAYI HY1906D Designed for Inverter Systems

N Channel Enhancement Mode MOSFET HUAYI HY1906D Designed for Inverter Systems

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Drain to Source Voltage 60V
Current - Continuous Drain(Id) 70A
Operating Temperature - -
RDS(on) 7mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)) 4V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 274pF
Number 1 N-channel
Output Capacitance(Coss) 405pF
Input Capacitance(Ciss) 4.6nF
Pd - Power Dissipation 62.5W
Gate Charge(Qg) 104nC@10V
Description N-Channel 60V 70A 62.5W Surface Mount TO-252
Mfr. Part # HY1906D
Package TO-252
Model Number HY1906D

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Product Specification

Drain to Source Voltage 60V Current - Continuous Drain(Id) 70A
Operating Temperature - - RDS(on) 7mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)) 4V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 274pF Number 1 N-channel
Output Capacitance(Coss) 405pF Input Capacitance(Ciss) 4.6nF
Pd - Power Dissipation 62.5W Gate Charge(Qg) 104nC@10V
Description N-Channel 60V 70A 62.5W Surface Mount TO-252 Mfr. Part # HY1906D
Package TO-252 Model Number HY1906D

HY1906D/U/V - N-Channel Enhancement Mode MOSFET

The HY1906D/U/V is a high-performance N-Channel Enhancement Mode MOSFET designed for various power management applications. It features low on-state resistance, avalanche rating, and a reliable, rugged construction. Available in lead-free and green (RoHS compliant) options, this MOSFET is ideal for inverter systems and other demanding power electronics applications.

Product Attributes

  • Brand: HUAYI
  • Origin: China
  • Certifications: RoHS Compliant, Green Devices Available

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDSS Drain-Source Voltage 70 V
VGSS Gate-Source Voltage ±25 V
TJ Maximum Junction Temperature (TC=25°C Unless Otherwise Noted) 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink 385 A
IDM Pulsed Drain Current TC=25°C 252 A
ID Continuous Drain Current TC=100°C 70 A
PD Maximum Power Dissipation TC=100°C 28 W
RθJC Thermal Resistance-Junction to Case 1.1 °C/W
RθJA Thermal Resistance-Junction to Ambient 110 °C/W
EAS Drain-Source Avalanche Energy L=0.5mH 60 mJ
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 60 V
IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V 1 µA
IDSS Zero Gate Voltage Drain Current TJ=85°C 10 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 2 3 4 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V ±100 nA
RDS(ON) Drain-Source On-state Resistance VGS=10V, IDS=35A 6.3 7.0 mΩ
VSD Diode Forward Voltage ISD=35A, VGS=0V 0.8 1.2 V
trr Reverse Recovery Time 50 ns
Qrr Reverse Recovery Charge ISD=35A, dlSD/dt=100A/µs 95 nC
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.0 Ω
Ciss Input Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz 3400 pF
Coss Output Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz 385 pF
Crss Reverse Transfer Capacitance VGS=0V, VDS=25V, Frequency=1.0MHz 62.5 pF
td(ON) Turn-on Delay Time VDD=30V, RG =4Ω, IDS=35A, VGS=10V, 21 ns
tr Turn-on Rise Time VDD=30V, RG =4Ω, IDS=35A, VGS=10V, 31 ns
td(OFF) Turn-off Delay Time VDD=30V, RG =4Ω, IDS=35A, VGS=10V, 35 ns
tf Turn-off Fall Time VDD=30V, RG =4Ω, IDS=35A, VGS=10V, 27 ns
Gate Charge Characteristics
Qg Total Gate Charge VDS=48V, VGS=10V, IDS=35A 34 nC
Qgs Gate-Source Charge VDS=48V, VGS=10V, IDS=35A 17 nC
Qgd Gate-Drain Charge VDS=48V, VGS=10V, IDS=35A 10.4 nC

Applications

  • Power Management for Inverter Systems

Package Information

Available in TO-251-3S, TO-252-2L, and TO-251-3L packages.

Ordering and Marking Information

Format: HY1906[Package Code] [Date Code]

Example: HY1906D/U/V

Reliability and Compliance

Lead Free and Green Devices Available (RoHS Compliant). Meets or exceeds the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification. "Green" signifies lead-free (RoHS compliant) and halogen-free.

Contact Information

Huayi Microelectronics Co., Ltd.
No.8928, Shangji Road, Economic and Technological Development Zone, Xi'an, China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
Web net: www.hymexa.com


2410121924_HUAYI-HY1906D_C122491.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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