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Hefei Purple Horn E-Commerce Co., Ltd.

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China Trenched technology MOSFET HUASHUO HSS2300A designed for fast switching and
China Trenched technology MOSFET HUASHUO HSS2300A designed for fast switching and

  1. China Trenched technology MOSFET HUASHUO HSS2300A designed for fast switching and

Trenched technology MOSFET HUASHUO HSS2300A designed for fast switching and

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Drain to Source Voltage 20V
Current - Continuous Drain(Id) 6A
Operating Temperature - -55℃~+150℃
RDS(on) 26mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)) 1V
Reverse Transfer Capacitance (Crss@Vds) 68pF@15V
Number 1 N-channel
Input Capacitance(Ciss) 670pF@15V
Pd - Power Dissipation 1W
Gate Charge(Qg) 8.6nC@4.5V
Description N-Channel 20V 6A 1W Surface Mount SOT-23
Mfr. Part # HSS2300A
Package SOT-23
Model Number HSS2300A

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  1. Product Details
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Product Specification

Drain to Source Voltage 20V Current - Continuous Drain(Id) 6A
Operating Temperature - -55℃~+150℃ RDS(on) 26mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)) 1V Reverse Transfer Capacitance (Crss@Vds) 68pF@15V
Number 1 N-channel Input Capacitance(Ciss) 670pF@15V
Pd - Power Dissipation 1W Gate Charge(Qg) 8.6nC@4.5V
Description N-Channel 20V 6A 1W Surface Mount SOT-23 Mfr. Part # HSS2300A
Package SOT-23 Model Number HSS2300A

Product Overview

The HSS2300A is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most small power switching and load switch applications. This MOSFET meets RoHS and Green Product requirements and has undergone full function reliability approval. It is available as a Green Device and features super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Type: N-Channel MOSFET
  • Technology: Trench
  • Compliance: RoHS, Green Product

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
ID@TA=25 Continuous Drain Current, VGS @ 4.5V1 6.0 A
ID@TA=70 Continuous Drain Current, VGS @ 4.5V1 5.0 A
IDM Pulsed Drain Current2 17 A
PD@TA=25 Total Power Dissipation3 1 W
PD@TA=70 Total Power Dissipation3 0.66 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient 120 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V
ΔBVDSS/ΔTJ BVDSS Temperature Coefficient Reference to 25 , ID=1mA --- 0.018 --- V/
RDS(ON),max Static Drain-Source On-Resistance2 VGS=4.5V , ID=4A --- 21 26 mΩ
VGS=2.5V , ID=3A --- 28 35 VGS
VGS=1.8V , ID=2A --- 40 50 mΩ
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.35 --- 1.0 V
ΔVGS(th)/ΔTJ VGS(th) Temperature Coefficient --- -3.1 --- mV/
IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25 --- --- 1 uA
VDS=16V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=4A --- 30 --- S
Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=4A --- 8.6 --- nC
Qgs Gate-Source Charge --- 1.37 --- nC
Qgd Gate-Drain Charge --- 2.3 --- nC
td(on) Turn-On Delay Time VDS=10V , VGS=4.5V , RG=3.3Ω ID=4A --- 5.2 --- ns
tr Rise Time --- 34 --- ns
td(off) Turn-Off Delay Time --- 23 --- ns
tf Fall Time --- 9.2 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 670 --- pF
Coss Output Capacitance --- 75 --- pF
Crss Reverse Transfer Capacitance --- 68 --- pF
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 6 A
ISM Pulsed Source Current2,4 --- --- 17 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- --- 1.2 V
Ordering Information
Part Number Package Code Packaging
HSS2300A SOT-23 3000/Tape&Reel

Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300us, duty cycle ≤ 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.


2410121531_HUASHUO-HSS2300A_C518780.pdf

Company Details

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,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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