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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China N Channel 4A 600V Power MOSFET Hangzhou Silan Microelectronics SVF4N60CAF for AC
China N Channel 4A 600V Power MOSFET Hangzhou Silan Microelectronics SVF4N60CAF for AC

  1. China N Channel 4A 600V Power MOSFET Hangzhou Silan Microelectronics SVF4N60CAF for AC

N Channel 4A 600V Power MOSFET Hangzhou Silan Microelectronics SVF4N60CAF for AC

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Drain to Source Voltage 600V
Current - Continuous Drain(Id) 4A
Operating Temperature - -55℃~+150℃@(Tj)
RDS(on) 2Ω@10V,2A
Gate Threshold Voltage (Vgs(th)) 2V
Reverse Transfer Capacitance (Crss@Vds) 4.5pF@25V
Number 1 N-channel
Input Capacitance(Ciss) 433pF@25V
Pd - Power Dissipation 33W
Gate Charge(Qg) 13nC@10V
Description 600V 4A 2Ω@10V,2A 2V 1 N-channel 33W TO-220 Single FETs, MOSFETs RoHS
Mfr. Part # SVF4N60CAF
Package TO-220
Model Number SVF4N60CAF

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 600V Current - Continuous Drain(Id) 4A
Operating Temperature - -55℃~+150℃@(Tj) RDS(on) 2Ω@10V,2A
Gate Threshold Voltage (Vgs(th)) 2V Reverse Transfer Capacitance (Crss@Vds) 4.5pF@25V
Number 1 N-channel Input Capacitance(Ciss) 433pF@25V
Pd - Power Dissipation 33W Gate Charge(Qg) 13nC@10V
Description 600V 4A 2Ω@10V,2A 2V 1 N-channel 33W TO-220 Single FETs, MOSFETs RoHS Mfr. Part # SVF4N60CAF
Package TO-220 Model Number SVF4N60CAF

Product Overview

The SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process minimizes on-state resistance, enhances switching performance, and provides superior high-energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.

Product Attributes

  • Brand: Silan Microelectronics
  • Origin: Hangzhou, China
  • Hazardous Substance Control: Halogen free, Pb free

Technical Specifications

Part No.Package4A, 600V RatingRDS(on)(typ.)@VGS=10VLow Gate ChargeLow CrssFast SwitchingImproved dv/dt Capability
SVF4N60CAFTO-220F-3L4A, 600V2.0YesYesYesYes
SVF4N60CAKTO-262-3L4A, 600V2.0YesYesYesYes
SVF4N60CADTO-252-2L4A, 600V2.0YesYesYesYes
SVF4N60CATTO-220-3L4A, 600V2.0YesYesYesYes
SVF4N60CAMNTO-251N-3L4A, 600V2.0YesYesYesYes
SVF4N60CAMJTO-251J-3L4A, 600V2.0YesYesYesYes
CharacteristicSymbolSVF4N60CAFSVF4N60CAKSVF4N60CADSVF4N60CAMN/MJSVF4N60CATUnit
Drain-Source VoltageVDS600600600600600V
Gate-Source VoltageVGS3030303030V
Drain Current (TC=25C)ID4.04.04.04.04.0A
Drain Current (TC=100C)ID2.52.52.52.52.5A
Drain Current PulsedIDM1616161616A
Power Dissipation (TC=25C)PD33927786110W
Single Pulsed Avalanche Energy (Note 1)EAS217217217217217mJ
Operation Junction Temperature RangeTJ-55+150-55+150-55+150-55+150-55+150C
Storage Temperature RangeTstg-55+150-55+150-55+150-55+150-55+150C
CharacteristicSymbolTest conditionsMin.Typ.Max.Unit
Drain -Source Breakdown VoltageBVDSSVGS=0V, ID=250A600----V
Drain-Source Leakage CurrentIDSSVDS=600V, VGS=0V----1.0A
Gate-Source Leakage CurrentIGSSVGS=30V, VDS=0V----100nA
Gate Threshold VoltageVGS(th)VGS= VDS, ID=250A2.0--4.0V
Static Drain- Source On State ResistanceRDS(on)VGS=10V, ID=2.0A--2.02.4
Input CapacitanceCissVDS=25V,VGS=0V, f=1.0MHz--433--pF
Output CapacitanceCossVDS=25V,VGS=0V, f=1.0MHz--55--pF
Reverse Transfer CapacitanceCrssVDS=25V,VGS=0V, f=1.0MHz--4.5--pF
Turn-on Delay Timetd(on)VDD=300V, ID=4A, RG=25 (Note2,3)--10--ns
Turn-on Rise TimetrVDD=300V, ID=4A, RG=25 (Note2,3)--26--ns
Turn-off Delay Timetd(off)VDD=300V, ID=4A, RG=25 (Note2,3)--29--ns
Turn-off Fall TimetfVDD=300V, ID=4A, RG=25 (Note2,3)--26--ns
Total Gate ChargeQgVDS=480V, ID=4A, VGS=10V (Note 2,3)--13--nC
Gate-Source ChargeQgsVDS=480V, ID=4A, VGS=10V (Note 2,3)--2.8--nC
Gate-Drain ChargeQgVDS=480V, ID=4A, VGS=10V (Note 2,3)--6.2--nC
Continuous Source CurrentIS------4.0A
Pulsed Source CurrentISM------16A
Diode Forward VoltageVSDIS=4.0A,VGS=0V----1.4V
Reverse Recovery TimeTrrIS=4.0A,VGS=0V, dIF/dt=100A/s (Note 2)--420--ns
Reverse Recovery ChargeQrrIS=4.0A,VGS=0V, dIF/dt=100A/s (Note 2)--1.8--C

2501091111_Hangzhou-Silan-Microelectronics-SVF4N60CAF_C601610.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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