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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China trench MOSFET HUASHUO HSK12N02 featuring low RDS ON and high cell density for
China trench MOSFET HUASHUO HSK12N02 featuring low RDS ON and high cell density for

  1. China trench MOSFET HUASHUO HSK12N02 featuring low RDS ON and high cell density for

trench MOSFET HUASHUO HSK12N02 featuring low RDS ON and high cell density for

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Drain to Source Voltage 20V
Current - Continuous Drain(Id) 12A
Operating Temperature - -55℃~+150℃
RDS(on) 12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) 1.2V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 140pF@10V
Number 1 N-channel
Input Capacitance(Ciss) 1.2nF@10V
Pd - Power Dissipation 1.7W
Gate Charge(Qg) 15nC@4.5V
Description N-Channel 20V 12A 1.7W Surface Mount SOT-89
Mfr. Part # HSK12N02
Package SOT-89
Model Number HSK12N02

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 20V Current - Continuous Drain(Id) 12A
Operating Temperature - -55℃~+150℃ RDS(on) 12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)) 1.2V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 140pF@10V Number 1 N-channel
Input Capacitance(Ciss) 1.2nF@10V Pd - Power Dissipation 1.7W
Gate Charge(Qg) 15nC@4.5V Description N-Channel 20V 12A 1.7W Surface Mount SOT-89
Mfr. Part # HSK12N02 Package SOT-89
Model Number HSK12N02

Product Overview

The HSK12N02 is a high cell density trenched N-channel MOSFET designed for excellent RDS(ON) and efficiency in small power switching and load switch applications. This fast-switching MOSFET offers super low gate charge and excellent Cdv/dt effect decline, utilizing advanced high cell density trench technology. It meets RoHS and Green Product requirements with full function reliability approval.

Product Attributes

  • Brand: HS-Semi
  • Product Line: HSK12N02
  • Technology: Trench MOSFET
  • Certifications: RoHS, Green Product
  • Package: SOT-89
  • Packaging: 1000/Tape&Reel

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
ID@TC=25 Continuous Drain Current, VGS @ 4.5V1 12 A
ID@TC=70 Continuous Drain Current, VGS @ 4.5V1 9.3 A
IDM Pulsed Drain Current2 48 A
PD@TA=25 Total Power Dissipation3 1.7 W
PD@TA=70 Total Power Dissipation3 1.2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient 100 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 20 V
ΔBVDSS/ΔTJ BVDSS Temperature Coefficient Reference to 25, ID=1mA 0.018 V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=12A 8.5 12 mΩ
VGS=2.5V , ID=8A 11 16 mΩ
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 0.45 0.75 1.2 V
ΔVGS(th)/ΔTJ VGS(th) Temperature Coefficient -3.1 mV/
IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25 1 µA
VDS=16V , VGS=0V , TJ=55 5 µA
IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V ±100 nA
gfs Forward Transconductance VDS=5V , ID=4A 30 S
Qg Total Gate Charge (4.5V) VDS=10V , VGS=4.5V , ID=4A 15 nC
Qgs Gate-Source Charge 2.5 nC
Qgd Gate-Drain Charge 3.6 nC
td(on) Turn-On Delay Time VDS=10V , VGS=4.5V , RG=3.3Ω ID=4A 9 ns
tr Rise Time 22 ns
td(off) Turn-Off Delay Time 33 ns
tf Fall Time 16 ns
Ciss Input Capacitance VDS=10V , VGS=0V , f=1MHz 1200 pF
Coss Output Capacitance 180 pF
Crss Reverse Transfer Capacitance 140 pF
Diode Characteristics
IS Continuous Source Current1,4 VG=VD=0V , Force Current 12 A
ISM Pulsed Source Current2,4 48 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 1.2 V

Notes:

  • 1: Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
  • 2: Tested by pulsed, pulse width ≤300µs, duty cycle ≤2%.
  • 3: Power dissipation is limited by 150 junction temperature.
  • 4: Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

2410122027_HUASHUO-HSK12N02_C28314509.pdf

Company Details

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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