Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃@(Tj) |
| RDS(on) | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF@25V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 789pF@25V |
| Pd - Power Dissipation | 46W |
| Gate Charge(Qg) | 21nC@10V |
| Description | 650V 7A 4V 1 N-channel 46W TO-220F-3 Single FETs, MOSFETs RoHS |
| Mfr. Part # | SVF7N65CF |
| Package | TO-220F-3 |
| Model Number | SVF7N65CF |
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Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃@(Tj) | RDS(on) | - |
| Gate Threshold Voltage (Vgs(th)) | 4V | Reverse Transfer Capacitance (Crss@Vds) | 9pF@25V |
| Number | 1 N-channel | Input Capacitance(Ciss) | 789pF@25V |
| Pd - Power Dissipation | 46W | Gate Charge(Qg) | 21nC@10V |
| Description | 650V 7A 4V 1 N-channel 46W TO-220F-3 Single FETs, MOSFETs RoHS | Mfr. Part # | SVF7N65CF |
| Package | TO-220F-3 | Model Number | SVF7N65CF |
The SVF7N65CF/D/MJ/MJL/K/T is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process and cell structure are engineered to minimize on-state resistance, deliver superior switching performance, and ensure robust high-energy pulse handling in avalanche and commutation modes. It is widely adopted in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
| Part Number | Package | 7A, 650V, RDS(on)(typ.) | Low Gate Charge | Low Crss | Fast Switching | Improved dv/dt Capability |
| SVF7N65CF | TO-220F-3L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| SVF7N65CD | TO-252-2L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| SVF7N65CMJ | TO-251J-3L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| SVF7N65CMJL | TO-251JL-3L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| SVF7N65CK | TO-262-3L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| SVF7N65CT | TO-220-3L | 1.1@VGS=10V | ✓ | ✓ | ✓ | ✓ |
| Characteristics | Symbol | Ratings | Unit | SVF7N65CF | SVF7N65CD | SVF7N65CMJ/CMJL | SVF7N65CK | SVF7N65CT |
| Drain-Source Voltage | VDS | 650 | V | ✓ | ✓ | ✓ | ✓ | ✓ |
| Gate-Source Voltage | VGS | ±30 | V | ✓ | ✓ | ✓ | ✓ | ✓ |
| Drain Current (TC = 25�b0;C) | ID | 7.0 | A | ✓ | ✓ | ✓ | ✓ | ✓ |
| Drain Current (TC = 100�b0;C) | ID | 4.4 | A | ✓ | ✓ | ✓ | ✓ | ✓ |
| Drain Current Pulsed | IDM | 28 | A | ✓ | ✓ | ✓ | ✓ | ✓ |
| Power Dissipation (TC=25�b0;C) | PD | 46-145 | W | 46 | 89 | 90 | 120 | 145 |
| Single Pulsed Avalanche Energy (Note 1) | EAS | 435 | mJ | ✓ | ✓ | ✓ | ✓ | ✓ |
| Reverse Diode dv/dt (Note 2) | dv/dt | 4.5 | V/ns | ✓ | ✓ | ✓ | ✓ | ✓ |
| MOSFET dv/dt Ruggedness (Note 3) | dv/dt | 50 | V/ns | ✓ | ✓ | ✓ | ✓ | ✓ |
| Operation Junction Temperature Range | TJ | -55+150 | �b0;C | ✓ | ✓ | ✓ | ✓ | ✓ |
| Storage Temperature Range | Tstg | -55+150 | �b0;C | ✓ | ✓ | ✓ | ✓ | ✓ |
| Characteristics | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| Drain -Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 650 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V | -- | -- | 1.0 | A |
| Gate-Source Leakage Current | IGSS | VGS=±30V, VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS= VDS, ID=250A | 2.0 | -- | 4.0 | V |
| Static Drain- Source On State Resistance | RDS(on) | VGS=10V, ID=3.5A | -- | 1.1 | 1.4 | Ω |
| Input Capacitance | Ciss | VDS=25V,VGS=0V, f=1.0MHz | -- | 789 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | -- | 98 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | -- | 9.0 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=325V, RG=25Ω, ID=7.0A (Note 4,5) | -- | 15 | -- | ns |
| Turn-on Rise Time | tr | VDD=325V, RG=25Ω, ID=7.0A (Note 4,5) | -- | 32 | -- | ns |
| Turn-off Delay Time | td(off) | VDD=325V, RG=25Ω, ID=7.0A (Note 4,5) | -- | 51 | -- | ns |
| Turn-off Fall Time | tf | VDD=325V, RG=25Ω, ID=7.0A (Note 4,5) | -- | 33 | -- | ns |
| Total Gate Charge | Qg | VDS=520V, ID=7.0A, VGS=10V (Note 4,5) | -- | 21 | -- | nC |
| Gate-Source Charge | Qgs | VDS=520V, ID=7.0A, VGS=10V (Note 4,5) | -- | 4.5 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=520V, ID=7.0A, VGS=10V (Note 4,5) | -- | 10 | -- | nC |
| Continuous Source Current | IS | Integral Reverse P-N Junction Diode in the MOSFET | -- | -- | 7.0 | A |
| Pulsed Source Current | ISM | -- | -- | -- | 28.0 | A |
| Diode Forward Voltage | VSD | IS=7.0A,VGS=0V | -- | -- | 1.4 | V |
| Reverse Recovery Time | Trr | IS=7.0A,VGS=0V, dIF/dt=100A/µs (Note 4) | -- | 499 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=7.0A,VGS=0V, dIF/dt=100A/µs (Note 4) | -- | 3.0 | -- | µC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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