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Hefei Purple Horn E-Commerce Co., Ltd.

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China SOT23 Package 30V MOSFET Featuring High Diode 3402 Ideal for Load Switches and
China SOT23 Package 30V MOSFET Featuring High Diode 3402 Ideal for Load Switches and

  1. China SOT23 Package 30V MOSFET Featuring High Diode 3402 Ideal for Load Switches and

SOT23 Package 30V MOSFET Featuring High Diode 3402 Ideal for Load Switches and

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 4A
RDS(on) 85mΩ@2.5V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1.5V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 40pF
Number 1 N-channel
Output Capacitance(Coss) 54pF
Pd - Power Dissipation 350mW
Input Capacitance(Ciss) 389pF
Gate Charge(Qg) 4.4nC@4.5V
Description N-Channel 30V 4A 0.35W Surface Mount SOT-23
Mfr. Part # 3402
Package SOT-23
Model Number 3402

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  1. Product Details
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Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 4A
RDS(on) 85mΩ@2.5V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1.5V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 40pF Number 1 N-channel
Output Capacitance(Coss) 54pF Pd - Power Dissipation 350mW
Input Capacitance(Ciss) 389pF Gate Charge(Qg) 4.4nC@4.5V
Description N-Channel 30V 4A 0.35W Surface Mount SOT-23 Mfr. Part # 3402
Package SOT-23 Model Number 3402

Product Overview

This is a 30V N-Channel MOSFET in a SOT-23 plastic-encapsulated package, designed for high-performance applications. It features TrenchFET technology for excellent RDS(on) and low gate charge, making it ideal for DC/DC converters, load switches for portable devices, and battery switches. The device is RoHS compliant.

Product Attributes

  • Brand: HIGH DIODE SEMICONDUCTOR
  • Package Type: SOT-23
  • Technology: TrenchFET Power MOSFET
  • Compliance: RoHS Compliant
  • Diode Type: High Diode

Technical Specifications

Parameter Symbol Test Condition Min Type Max Unit
PRODUCT SUMMARY
V(BR)DSS 30 V
RDS(on) TYP @10V 34 m
@4.5V 37 m
@2.5V 45 m
ID 4 A
ABSOLUTE MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current ID 4 A
Pulsed Drain Current(1) IDM 15 A
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient(2) RJA 357 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ +150
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 30 V
Zero gate voltage drain current IDSS VDS =30V,VGS = 0V 1 A
Gate-body leakage current IGSS VGS =12V, VDS = 0V 100 nA
Gate threshold voltage(3) VGS(th) VDS =VGS, ID =250A 1.5 V
Drain-source on-resistance(3) RDS(on) VGS =10V, ID =4A 34 52 m
VGS =4.5V, ID =3A 37 65
VGS =2.5V, ID =2A 45 85
Forward tranconductance(3) gFS VDS =5V, ID =3.6A 13 S
DYNAMIC CHARACTERISTICS(4)
Input Capacitance Ciss VDS =15V,VGS =0V,f=1MHz 389 pF
Output Capacitance Coss 54
Reverse Transfer Capacitance Crss 40
Gate resistance Rg VDS =0V,VGS =0V,f =1MHz 3.5
SWITCHING CHARACTERISTICS(4)
Turn-on delay time td(on) VGS=10V,VDS=15V, RL=3.75,RGEN=6 3.5 ns
Turn-on rise time tr 1.2
Turn-off delay time td(off) 22
Turn-off fall time tf 2.2
Total gate charge Qg VDS =15V,VGS =4.5V,ID =4A 4.4 nC
Gate-source charge Qgs 0.7
Gate-drain charge Qgd 1.3
SOURCE-DRAIN DIODE CHARACTERISTICS
Body Diode Voltage(3) VSD IS=1A, VGS = 0V 0.5 0.9 V
Continuous Source-Drain Diode Current IS TC=25 1.5 A
Body diode reverse recovery time trr IF=4A,dI/dt=100A/s 1.3 ns
Body diode reverse recovery charge Qrr 6.2 nC
PACKAGE DIMENSIONS
Symbol Dimensions In Millimeters Min Max Symbol Dimensions In Inches Min Max
A 0.900 1.150 A 0.035 0.045
A1 0.000 0.100 A1 0.000 0.004
A2 0.900 1.050 A2 0.035 0.041
b 0.300 0.500 b 0.012 0.020
c 0.080 0.150 c 0.003 0.006
D 2.800 3.000 D 0.110 0.118
E 1.200 1.400 E 0.047 0.055
E1 2.250 2.550 E1 0.089 0.100
e 1.800 2.000 e 0.071 0.079
e1 0.950 TYP e1 0.037 TYP
L 0.300 0.500 L 0.012 0.020
L1 0.550 REF L1 0.022 REF
0 8 0 8

Notes:
(1) Repetitive rating: Pulse width limited by junction temperature.
(2) Surface mounted on FR4 board, t 10s.
(3) Pulse Test: Pulse Width 80s, Duty Cycle 0.5%.
(4) Guaranteed by design, not subject to production testing.


2410121433_High-Diode-3402_C22458619.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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