Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 3.3mΩ@10V,30A |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Reverse Transfer Capacitance (Crss@Vds) | 500pF@25V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.9nF@25V |
| Pd - Power Dissipation | 140W |
| Gate Charge(Qg) | 140nC@10V |
| Description | P-Channel 30V 100A 140W PRPAK5x6-8L |
| Mfr. Part # | HSBA100P03 |
| Package | PRPAK5x6-8L |
| Model Number | HSBA100P03 |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 3.3mΩ@10V,30A |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | Reverse Transfer Capacitance (Crss@Vds) | 500pF@25V |
| Number | 1 P-Channel | Input Capacitance(Ciss) | 7.9nF@25V |
| Pd - Power Dissipation | 140W | Gate Charge(Qg) | 140nC@10V |
| Description | P-Channel 30V 100A 140W PRPAK5x6-8L | Mfr. Part # | HSBA100P03 |
| Package | PRPAK5x6-8L | Model Number | HSBA100P03 |
The HSBA100P03 is a high cell density trenched P-channel MOSFET designed for excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. It features super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology, enabling fast switching performance.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1,6 | -100 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ -10V1,6 | -64 | A | |||
| IDM | Pulsed Drain Current2 | -400 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 310 | mJ | |||
| IAS | Avalanche Current | -80 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 140 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-ambient | 1(t≤10S) | 20 | /W | ||
| RJA | Thermal Resistance Junction-ambient | 1(Steady State) | 62 | /W | ||
| RJC | Thermal Resistance Junction-case | 1 | 0.9 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-30A | 2.6 | 3.3 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-20A | 3.8 | 5 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.2 | -2.2 | V | |
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=55 | -5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | ||
| Qg | Total Gate Charge (-10V) | VDS=-24V , VGS=-10V , ID=-10A | 140 | nC | ||
| Qgs | Gate-Source Charge | 22 | nC | |||
| Qgd | Gate-Drain Charge | 31 | nC | |||
| Td(on) | Turn-On Delay Time | VDD=-15V , VGS=-10V , RG=5Ω, ID=-10A | 17 | ns | ||
| Tr | Rise Time | 60 | ns | |||
| Td(off) | Turn-Off Delay Time | 200 | ns | |||
| Tf | Fall Time | 111 | ns | |||
| Ciss | Input Capacitance | VDS=-25V , VGS=0V , f=1MHz | 7900 | pF | ||
| Coss | Output Capacitance | 980 | pF | |||
| Crss | Reverse Transfer Capacitance | 500 | pF | |||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | -100 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1 | V | ||
| trr | Reverse Recovery Time | IF=-20A , di/dt=100A/µs , TJ=25 | 53 | nS | ||
| Qrr | Reverse Recovery Charge | 52 | nC | |||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows Max. rating. The test condition is VDD=-50V, VGS=-10V, L=0.1mH, IAS=-80A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
6. The maximum current rating is package limited.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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