| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 2.4Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF@100V |
| Number | 1 P-Channel |
| Pd - Power Dissipation | 1.5W |
| Input Capacitance(Ciss) | 500pF@100V |
| Gate Charge(Qg) | 8.5nC@4.5V |
| Description | P-Channel 200V 3A 1.5W Surface Mount SOT-223 |
| Mfr. Part # | HSL3P20 |
| Package | SOT-223 |
| Model Number | HSL3P20 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 200V | Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 2.4Ω@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF@100V | Number | 1 P-Channel |
| Pd - Power Dissipation | 1.5W | Input Capacitance(Ciss) | 500pF@100V |
| Gate Charge(Qg) | 8.5nC@4.5V | Description | P-Channel 200V 3A 1.5W Surface Mount SOT-223 |
| Mfr. Part # | HSL3P20 | Package | SOT-223 |
| Model Number | HSL3P20 |
The HSL3P20 is a P-channel, 200V fast switching MOSFET featuring high cell density trench technology. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device meets RoHS and Green Product requirements and is available in a Green Device option. Key advantages include super low gate charge, excellent Cdv/dt effect decline, and advanced high cell density trench technology.
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -200 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ -10V1 | -3 | A | |||
| ID@TC=70 | Continuous Drain Current, VGS @ -10V1 | -2 | A | |||
| ID@TA=25 | Continuous Drain Current, VGS @ -10V1 | -0.9 | A | |||
| ID@TA=70 | Continuous Drain Current, VGS @ -10V1 | -0.68 | A | |||
| IDM | Pulsed Drain Current2 | -3.5 | A | |||
| PD@TA=25 | Total Power Dissipation3 | 1.5 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient | 85 | /W | |||
| RJC | Thermal Resistance Junction-Case1 | 36 | /W | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -200 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-0.5A | 1.9 | 2.4 | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -2.0 | -3.0 | -4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=-160V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-160V , VGS=0V , TJ=55 | 10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=-5V , ID=-0.8A | 0.5 | S | ||
| Qg | Total Gate Charge | VDS=-100V , VGS=-4.5V , ID=-0.5A | 8.5 | nC | ||
| Qgs | Gate-Source Charge | 1.5 | ||||
| Qgd | Gate-Drain Charge | 1.8 | ||||
| Td(on) | Turn-On Delay Time | VDD=-100V , VGS=-10V , RG=6 ID=-0.5A | 1.9 | ns | ||
| Tr | Rise Time | 1.2 | ns | |||
| Td(off) | Turn-Off Delay Time | 22 | ns | |||
| Tf | Fall Time | 11 | ns | |||
| Ciss | Input Capacitance | VDS=-100V , VGS=0V , f=1MHz | 500 | pF | ||
| Coss | Output Capacitance | 39 | pF | |||
| Crss | Reverse Transfer Capacitance | 20 | pF | |||
| IS | Continuous Source Current1,4 | VG=VD=0V , Force Current | -1.2 | A | ||
| ISM | Pulsed Source Current2,4 | -3.5 | A | |||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=-1A , TJ=25 | -1.3 | V |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The power dissipation is limited by 150 junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!