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Hefei Purple Horn E-Commerce Co., Ltd.

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China Complementary MOSFETs HUASHUO HSBB3909 with advanced Trench technology and full
China Complementary MOSFETs HUASHUO HSBB3909 with advanced Trench technology and full

  1. China Complementary MOSFETs HUASHUO HSBB3909 with advanced Trench technology and full

Complementary MOSFETs HUASHUO HSBB3909 with advanced Trench technology and full

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 24A;27A
Operating Temperature - -55℃~+150℃@(Tj)
RDS(on) -
Gate Threshold Voltage (Vgs(th)) 2.5V
Reverse Transfer Capacitance (Crss@Vds) 234pF@15V
Number 1 N-Channel + 1 P-Channel
Input Capacitance(Ciss) 2.213nF@15V
Pd - Power Dissipation 20W
Gate Charge(Qg) 7.2nC@4.5V
Description N-Channel+P-Channel Array 30V 24A 27A 20W PRPAK3x3-8L
Mfr. Part # HSBB3909
Package PRPAK3x3-8L
Model Number HSBB3909

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 24A;27A
Operating Temperature - -55℃~+150℃@(Tj) RDS(on) -
Gate Threshold Voltage (Vgs(th)) 2.5V Reverse Transfer Capacitance (Crss@Vds) 234pF@15V
Number 1 N-Channel + 1 P-Channel Input Capacitance(Ciss) 2.213nF@15V
Pd - Power Dissipation 20W Gate Charge(Qg) 7.2nC@4.5V
Description N-Channel+P-Channel Array 30V 24A 27A 20W PRPAK3x3-8L Mfr. Part # HSBB3909
Package PRPAK3x3-8L Model Number HSBB3909

Product Overview

The HSBB3909 is a series of high-performance complementary N-channel and P-channel Fast Switching MOSFETs featuring high cell density. These MOSFETs offer excellent RDS(ON) and gate charge characteristics, making them ideal for synchronous buck converter applications. They are designed with advanced high cell density Trench technology and meet RoHS and Green Product requirements. The series is 100% EAS guaranteed with full function reliability approval.

Product Attributes

  • Brand: HS-Semi
  • Product Line: HSBB3909
  • Certifications: RoHS, Green Device Available
  • Technology: Advanced high cell density Trench technology
  • Reliability: 100% EAS Guaranteed, Full function reliability approved

Technical Specifications

General Features

Parameter Rating Units N-Ch P-Ch
Drain-Source Voltage (VDS) 30 V ✓ ✓
Gate-Source Voltage (VGS) 20 V ✓ ✓
Continuous Drain Current, VGS @ 10V (ID@TC=25) 24 A ✓ ✓
Continuous Drain Current, VGS @ 10V (ID@TC=70) 19 A ✓ ✓
Pulsed Drain Current (IDM) 60 A ✓ ✓
Single Pulse Avalanche Energy (EAS) 22 / 72 mJ N-Ch P-Ch
Avalanche Current (IAS) 21 / -38 A N-Ch P-Ch
Total Power Dissipation (PD@TC=25) 20 W ✓ ✓
Storage Temperature Range (TSTG) -55 to 150 ✓ ✓
Operating Junction Temperature Range (TJ) -55 to 150 ✓ ✓

Thermal Data

Parameter Conditions Typ. Max. Units
Thermal Resistance Junction-Ambient (RJA) 1 --- 62.5 /W
Thermal Resistance Junction-Case (RJC) 1 --- 6 /W

N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=10A --- --- 20 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25 --- --- 1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Qg Total Gate Charge VDS=20V , VGS=4.5V , ID=10A --- 7.2 --- nC
Td(on) Turn-On Delay Time VDD=12V , VGS=10V , RG=3.3, ID=5A --- 4.1 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 572 --- pF

P-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-8A --- 13 18 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 --- -2.5 V
IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25 --- --- 1 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Qg Total Gate Charge VDS=-15V , VGS=-4.5V , ID=-8A --- 22 --- nC
Td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3, ID=-1A --- 32 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 2213 --- pF

Diode Characteristics

Symbol Parameter Conditions Typ. Max. Units
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25 --- 1.2 V

Package Outline Dimensions

PRPAK3X3


2410121517_HUASHUO-HSBB3909_C7543695.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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