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Hefei Purple Horn E-Commerce Co., Ltd.

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China 100V N Channel MOSFET HUASHUO HSH0076A Featuring Low On Resistance and Suitable
China 100V N Channel MOSFET HUASHUO HSH0076A Featuring Low On Resistance and Suitable

  1. China 100V N Channel MOSFET HUASHUO HSH0076A Featuring Low On Resistance and Suitable

100V N Channel MOSFET HUASHUO HSH0076A Featuring Low On Resistance and Suitable

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Drain to Source Voltage 100V
Current - Continuous Drain(Id) 308A
RDS(on) 1.8mΩ@10V,30A
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2V
Reverse Transfer Capacitance (Crss@Vds) 388pF@50V
Number 1 N-channel
Input Capacitance(Ciss) 13.37nF@50V
Pd - Power Dissipation 430W
Gate Charge(Qg) 200nC@10V
Description N-Channel 100V 308A 430W Surface Mount TO-263
Mfr. Part # HSH0076A
Package TO-263
Model Number HSH0076A

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 100V Current - Continuous Drain(Id) 308A
RDS(on) 1.8mΩ@10V,30A Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2V Reverse Transfer Capacitance (Crss@Vds) 388pF@50V
Number 1 N-channel Input Capacitance(Ciss) 13.37nF@50V
Pd - Power Dissipation 430W Gate Charge(Qg) 200nC@10V
Description N-Channel 100V 308A 430W Surface Mount TO-263 Mfr. Part # HSH0076A
Package TO-263 Model Number HSH0076A

Product Overview

The HSH0076A is a N-Channel 100V Fast Switching MOSFET designed for high-frequency applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS guaranteed performance. This MOSFET is suitable for motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. A green device version is available.

Product Attributes

  • Brand: HS-Semi
  • Technology: Advanced high cell density Trench technology
  • Certifications: 100% EAS Guaranteed, Green Device Available

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID@TC=25 Continuous Drain Current, VGS @ 10V1,6 308 A
ID@TC=100 Continuous Drain Current, VGS @ 10V1,6 218 A
IDM Pulsed Drain Current2 550 A
EAS Single Pulse Avalanche Energy3 1013 mJ
IAS Avalanche Current 45 A
PD@TC=25 Total Power Dissipation4 430 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 60 /W
RJC Thermal Resistance Junction-Case1 --- 0.35 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V
RDS(ON),typ Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 1.8 2.2 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 --- 4.0 V
IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25 --- --- 1 uA
VDS=80V , VGS=0V , TJ=125 --- --- 100 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=20A --- 75 --- S
Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=20A --- 200 --- nC
Qgs Gate-Source Charge --- 54 ---
Qgd Gate-Drain Charge --- 49 ---
Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.0, ID=20A --- 47 --- ns
Tr Rise Time --- 28 --- ns
Td(off) Turn-Off Delay Time --- 79 --- ns
Tf Fall Time --- 18 --- ns
Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 13370 --- pF
Coss Output Capacitance --- 1920 --- pF
Crss Reverse Transfer Capacitance --- 388 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 80 A
VSD Diode Forward Voltage2 VGS=0V , IS=50A , TJ=25 --- --- 1.1 V
trr Reverse Recovery Time IF=20A , dI/dt=100A/s , TJ=25 --- 70 --- nS
Qrr Reverse Recovery Charge --- 580 --- nC

Applications:

  • MOTOR Driver
  • BMS (Battery Management System)
  • High frequency switching and synchronous rectification

Notes:

  1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
  2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
  3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=45A.
  4. The power dissipation is limited by 150 junction temperature.
  5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
  6. Package limitation current.

2410121642_HUASHUO-HSH0076A_C5341706.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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