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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China N Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1C2 with 46A continuous drain
China N Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1C2 with 46A continuous drain

  1. China N Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1C2 with 46A continuous drain

N Channel Enhancement Mode MOSFET HUAYI HYG180N10LS1C2 with 46A continuous drain

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Drain to Source Voltage 100V
Current - Continuous Drain(Id) 46A
Operating Temperature - -55℃~+175℃
RDS(on) 16.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)) 2V
Reverse Transfer Capacitance (Crss@Vds) 21.9pF@25V
Number 1 N-channel
Pd - Power Dissipation 83.3W
Input Capacitance(Ciss) 1.548nF
Gate Charge(Qg) 23.8nC@10V
Description N-Channel 100V 46A 83.3W Surface Mount PDFN-8(5x6)
Mfr. Part # HYG180N10LS1C2
Package PDFN-8(5x6)
Model Number HYG180N10LS1C2

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 100V Current - Continuous Drain(Id) 46A
Operating Temperature - -55℃~+175℃ RDS(on) 16.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)) 2V Reverse Transfer Capacitance (Crss@Vds) 21.9pF@25V
Number 1 N-channel Pd - Power Dissipation 83.3W
Input Capacitance(Ciss) 1.548nF Gate Charge(Qg) 23.8nC@10V
Description N-Channel 100V 46A 83.3W Surface Mount PDFN-8(5x6) Mfr. Part # HYG180N10LS1C2
Package PDFN-8(5x6) Model Number HYG180N10LS1C2

HYG180N10LS1C2 N-Channel Enhancement Mode MOSFET

The HYG180N10LS1C2 is a high-performance N-Channel Enhancement Mode MOSFET designed for power switching applications. It features a low on-resistance of 16.5m (typ.) at VGS = 10V and 20m (typ.) at VGS = 6V, a 100V drain-source voltage, and 46A continuous drain current. This device is 100% avalanche tested, reliable, and rugged, with halogen-free and green options available (RoHS Compliant). It is particularly suitable for high-frequency synchronous buck converters.

Product Attributes

  • Brand: HYG (Huayi Microelectronics Co., Ltd.)
  • Package Type: PDFN8L (5x6)
  • Certifications: RoHS Compliant, Halogen-Free and Green Devices Available
  • Material: Lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish.

Technical Specifications

Parameter Test Conditions Rating Unit
Absolute Maximum Ratings
Drain-Source Voltage (VDSS) 100 V
Gate-Source Voltage (VGSS) ±20 V
Maximum Junction Temperature (TJ) -55 to 175 °C
Storage Temperature Range (TSTG) -55 to 175 °C
Source Current-Continuous (IS) (Body Diode, Tc=25°C, Mounted on Large Heat Sink) 46 A
Pulsed Drain Current (IDM) (Tc=25°C) * 130 A
Continuous Drain Current (ID) (Tc=25°C) 46 A
Continuous Drain Current (ID) (Tc=100°C) 32.5 A
Maximum Power Dissipation (PD) (Tc=25°C) 83.3 W
Maximum Power Dissipation (PD) (Tc=100°C) 41.6 W
Thermal Resistance, Junction-to-Case (RθJC) 1.8 °C/W
Thermal Resistance, Junction-to-Ambient (RθJA) ** 47 °C/W
Single Pulsed-Avalanche Energy (EAS) (L=0.3mH) *** 65.75 mJ
Electrical Characteristics
Drain-Source Breakdown Voltage (BVDSS) VGS=0V, IDS=250µA 100 V
Drain-to-Source Leakage Current (IDSS) VDS=100V, VGS=0V - 1.0 µA
Drain-to-Source Leakage Current (IDSS) TJ=125°C - 50 µA
Gate Threshold Voltage (VGS(th)) VDS=VGS, IDS=250µA 1 / 2 / 3 V
Gate-Source Leakage Current (IGSS) VGS=±20V, VDS=0V - ±100 nA
Drain-Source On-State Resistance (RDS(ON)) VGS=10V, IDS=20A - / 16.5 / 21 mΩ
Drain-Source On-State Resistance (RDS(ON)) VGS=6V, IDS=20A - / 20 / 26 mΩ
Diode Forward Voltage (VSD) ISD=20A, VGS=0V - / 0.92 / 1.3 V
Reverse Recovery Time (trr) ISD=20A, dISD/dt=100A/µs - / 51.6 / - ns
Reverse Recovery Charge (Qrr) - / 84.4 / - nC
Gate Resistance (RG) VGS=0V, VDS=0V, F=1MHz - / 1.9 / - Ω
Input Capacitance (Ciss) VGS=0V, VDS=25V, Frequency=1.0MHz - / 1548 / - pF
Output Capacitance (Coss) - / 449.2 / - pF
Reverse Transfer Capacitance (Crss) - / 21.9 / - pF
Turn-on Delay Time (td(ON)) VDD=50V, RG=2.5Ω, IDS=20A, VGS=10V - / 10.5 / - ns
Turn-on Rise Time (Tr) - / 24 / - ns
Turn-off Delay Time (td(OFF)) - / 20.6 / - ns
Turn-off Fall Time (Tf) - / 4.8 / - ns
Total Gate Charge (Qg) VDS=80V, VGS=10V, ID=20A - / 23.8 / - nC
Gate-Source Charge (Qgs) - / 7.6 / - nC
Gate-Drain Charge (Qgd) - / 3.6 / - nC

2409302230_HUAYI-HYG180N10LS1C2_C5121300.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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