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Hefei Purple Horn E-Commerce Co., Ltd.

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China Power MOSFET Hangzhou Silan Microelectronics SVF13N50F N Channel Device for
China Power MOSFET Hangzhou Silan Microelectronics SVF13N50F N Channel Device for

  1. China Power MOSFET Hangzhou Silan Microelectronics SVF13N50F N Channel Device for

Power MOSFET Hangzhou Silan Microelectronics SVF13N50F N Channel Device for

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Drain to Source Voltage 500V
Current - Continuous Drain(Id) 13A
Operating Temperature - -55℃~+150℃
RDS(on) 520mΩ@10V
Gate Threshold Voltage (Vgs(th)) 4V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 4.76pF
Number 1 N-channel
Output Capacitance(Coss) 183pF
Input Capacitance(Ciss) 1.436nF
Pd - Power Dissipation 51W
Gate Charge(Qg) 23.83nC@10V
Description N-Channel 500V 13A 51W Through Hole TO-220F-3
Mfr. Part # SVF13N50F
Package TO-220F-3
Model Number SVF13N50F

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 500V Current - Continuous Drain(Id) 13A
Operating Temperature - -55℃~+150℃ RDS(on) 520mΩ@10V
Gate Threshold Voltage (Vgs(th)) 4V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 4.76pF Number 1 N-channel
Output Capacitance(Coss) 183pF Input Capacitance(Ciss) 1.436nF
Pd - Power Dissipation 51W Gate Charge(Qg) 23.83nC@10V
Description N-Channel 500V 13A 51W Through Hole TO-220F-3 Mfr. Part # SVF13N50F
Package TO-220F-3 Model Number SVF13N50F

Product Description

The SVF13N50T/F/FG/PN is an N-channel enhanced high-voltage power MOS field-effect transistor manufactured using Silan's F-CellTM planar high-voltage VDMOS process technology. Its advanced process and strip cell design structure provide low on-resistance, excellent switching performance, and high avalanche breakdown capability. This product is widely applicable in AC-DC switching power supplies, DC-DC converters, and high-voltage H-bridge PWM motor drivers.

Product Attributes

  • Brand: Silan Microelectronics
  • Origin: Hangzhou, China
  • Certifications: Lead-free, Halogen-free (for FG variant)
  • Packaging: Tube

Technical Specifications

ParameterSymbolSVF13N50TSVF13N50F(G)SVF13N50PNUnit
Absolute Maximum Ratings (TC=25C unless otherwise specified)
Drain-Source VoltageVDS500V
Gate-Source VoltageVGS30V
Drain Current (TC=25C)ID13A
Drain Current (TC=100C)ID10A
Drain Pulse CurrentIDM52A
Power Dissipation (TC=25C)PD1.520.411.74W
Power Dissipation (TC>25C, derate per C)PD1.52W
Single Pulsed Avalanche Energy (Note 1)EAS823.75mJ
Operating Junction Temperature RangeTJ-55+150C
Storage Temperature RangeTstg-55+150C
Thermal Characteristics
Chip to Case Thermal ResistanceRJC0.662.450.57C/W
Chip to Ambient Thermal ResistanceRJA62.512050C/W
Electrical Characteristics (TC=25C unless otherwise specified)
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=250A500V
Drain-Source Leakage CurrentIDSSVDS=500V, VGS=0V1A
Gate-Source Leakage CurrentIGSSVGS=30V, VDS=0V100nA
Gate Threshold VoltageVGS(th)VGS= VDS, ID=250A2.0 -- 4.0V
Drain-Source On-ResistanceRDS(on)VGS=10V, ID=6.5A0.44 -- 0.52
Input CapacitanceCissVGS=0V, f=1.0MHz1436pF
Output CapacitanceCossVDS=25V, VGS=0V, f=1.0MHz183pF
Reverse Transfer CapacitanceCrssVDS=25V, VGS=0V, f=1.0MHz4.76pF
Turn-on Delay Timetd(on)VDD=250V, ID=13A, RG=4.7, VGS=10V (Note 2, 3)37.33ns
Turn-on Rise TimetrVDD=250V, ID=13A, RG=4.7, VGS=10V (Note 2, 3)76.67ns
Turn-off Delay Timetd(off)VDD=250V, ID=13A, RG=4.7, VGS=10V (Note 2, 3)79.67ns
Turn-off Fall TimetfVDD=250V, ID=13A, RG=4.7, VGS=10V (Note 2, 3)54.00ns
Total Gate ChargeQgVDS=400V, ID=13A, VGS=10V (Note 2, 3)23.83nC
Gate-Source ChargeQgsVDS=400V, ID=13A, VGS=10V (Note 2, 3)7.79nC
Gate-Drain ChargeQgdVDS=400V, ID=13A, VGS=10V (Note 2, 3)7.86nC
Source-Drain Diode Characteristics
Source CurrentIS--13A
Pulsed Source CurrentISM--52A
Source-Drain Diode Forward VoltageVSDIS=13A, VGS=0V-- -- 1.3V
Reverse Recovery TimeTrrIS=13A, VGS=0V, dIF/dt=100A/S (Note 2)537.44ns
Reverse Recovery ChargeQrrIS=13A, VGS=0V, dIF/dt=100A/S (Note 2)5.22C

2511110935_Hangzhou-Silan-Microelectronics-SVF13N50F_C403817.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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