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Hefei Purple Horn E-Commerce Co., Ltd.

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China ASDsemi ASDM20N90Q R power MOSFET offering 20 volt drain source voltage and 90
China ASDsemi ASDM20N90Q R power MOSFET offering 20 volt drain source voltage and 90

  1. China ASDsemi ASDM20N90Q R power MOSFET offering 20 volt drain source voltage and 90

ASDsemi ASDM20N90Q R power MOSFET offering 20 volt drain source voltage and 90

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Drain to Source Voltage 20V
Current - Continuous Drain(Id) 90A
RDS(on) 2.5mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1.1V@250uA
Reverse Transfer Capacitance (Crss@Vds) 365pF@10V
Number 1 N-channel
Input Capacitance(Ciss) 3.605nF@10V
Pd - Power Dissipation 40W
Gate Charge(Qg) 36.6nC@10V
Description N-Channel 20V 90A 40W Surface Mount PDFN5x6-8
Mfr. Part # ASDM20N90Q-R
Package PDFN5x6-8
Model Number ASDM20N90Q-R

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  1. Product Details
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Product Specification

Drain to Source Voltage 20V Current - Continuous Drain(Id) 90A
RDS(on) 2.5mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 1.1V@250uA Reverse Transfer Capacitance (Crss@Vds) 365pF@10V
Number 1 N-channel Input Capacitance(Ciss) 3.605nF@10V
Pd - Power Dissipation 40W Gate Charge(Qg) 36.6nC@10V
Description N-Channel 20V 90A 40W Surface Mount PDFN5x6-8 Mfr. Part # ASDM20N90Q-R
Package PDFN5x6-8 Model Number ASDM20N90Q-R

Product Overview

The ASDM20N90Q is a 20V N-CHANNEL MOSFET from Ascend Semiconductor, designed for power management in inverter systems. It features 100% EAS guaranteed, a green device option, super low gate charge, and excellent CdV/dt effect decline, all enabled by advanced high cell density Trench technology. This MOSFET offers a continuous drain current of 90A at 25C and 75A at 100C, with a low on-state resistance of 1.5 m at VGS=10V and 1.8 m at VGS=4.5V. Its robust design and high performance make it suitable for demanding power applications.

Product Attributes

  • Brand: Ascend Semiconductor
  • Device Type: N-CHANNEL MOSFET
  • Technology: Advanced high cell density Trench technology
  • Certifications: Green Device Available
  • Package Type: PDFN5*6-8
  • MSL Level: 3

Technical Specifications

Symbol Parameter Condition Min. Typ. Max. Unit
Maximum Ratings
VDS Drain-Source breakdown voltage VGS=0V, ID=250A 20 -- -- V
ID Continuous drain current @VGS=10V Tc =25C -- 90 -- A
ID Continuous drain current @VGS=10V Tc =100C -- 75 -- A
IDM Pulse drain current tested TA =25C -- 360 -- A
EAS Avalanche energy, single pulsed 105 -- -- mJ
PD Maximum power dissipation Tc =25C -- 40 -- W
VGS Gate-Source voltage -- -- 20 -- V
TSTG,TJ Storage and junction temperature range -- -55 -- 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction-to-Case -- -- 1.9 -- C/W
Electrical Characteristics
IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V (Tj=25) -- 1 -- A
IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V (Tj=125) -- -- 100 A
IGSS Gate-Body Leakage Current VGS=12V,VDS=0V -- -- 100 nA
VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250A 0.5 0.75 1.1 V
RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=30A -- 1.5 2.5 m
RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=20A -- 1.8 2.8 m
RDS(ON) Drain-Source On-State Resistance VGS=2.5V, ID=20A -- 2.8 4 m
Dynamic Electrical Characteristics
Ciss Input Capacitance VDS=10V,VGS=0V, f=1MHz -- 3605 -- pF
Coss Output Capacitance -- -- 490 -- pF
Crss Reverse Transfer Capacitance -- -- 365 -- pF
Rg Gate Resistance f=1MHz -- 2.4 --
Qg Total Gate Charge VDS=10V,ID=15A, VGS=10V -- 36.6 -- nC
Qgs Gate-Source Charge -- -- 6.07 -- nC
Qgd Gate-Drain Charge -- -- 13.8 -- nC
Switching Characteristics
td(on) Turn-on Delay Time VDD=10V, ID=20A, RG=1.5, VGS=6V -- 11.2 -- nS
tr Turn-on Rise Time -- -- 49 -- nS
td(off) Turn-Off Delay Time -- -- 35 -- nS
tf Turn-Off Fall Time -- -- 7.8 -- nS
Source-Drain Diode Characteristics
VSD Forward on voltage ISD=2A,VGS=0V -- 0.8 1.2 V
trr Reverse Recovery Time Tj=25,Isd=10A, VGS=0V, di/dt=500A/s -- 20 -- nS
Qrr Reverse Recovery Charge -- -- 11.5 -- nC

Ordering and Marking Information

Device No. Marking Package Packing Quantity
ASDM20N90Q-R 20N90 PDFN5*6-8 4000/Reel

Package Outline Dimensions (Units: mm)

Symbol A b C D D1 D2 E E1 E2 e L L1 H
Value 1.12 0.9 0.51 0.33 0.34 0.11 5.26 4.7 5.1 4.7 4.5 3.56 6.25 5.75
Symbol 6 5.6 3.66 3.18 1.37 1.17 0.71 0.35 0.2 0.06 0.71 0.35 --

2411220133_ASDsemi-ASDM20N90Q-R_C2972894.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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