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Hefei Purple Horn E-Commerce Co., Ltd.

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China ASDsemi ASDM30N120KQ-R 30V N Channel MOSFET Designed for Industrial Power
China ASDsemi ASDM30N120KQ-R 30V N Channel MOSFET Designed for Industrial Power

  1. China ASDsemi ASDM30N120KQ-R 30V N Channel MOSFET Designed for Industrial Power

ASDsemi ASDM30N120KQ-R 30V N Channel MOSFET Designed for Industrial Power

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 120A
RDS(on) 3.5mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds) 416pF
Number 1 N-channel
Output Capacitance(Coss) 440pF
Pd - Power Dissipation 45W
Input Capacitance(Ciss) 2.921nF
Gate Charge(Qg) 63nC@10V
Description N-Channel 30V 120A 45W Surface Mount TO-252
Mfr. Part # ASDM30N120KQ-R
Package TO-252
Model Number ASDM30N120KQ-R

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 120A
RDS(on) 3.5mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2.5V@250uA Reverse Transfer Capacitance (Crss@Vds) 416pF
Number 1 N-channel Output Capacitance(Coss) 440pF
Pd - Power Dissipation 45W Input Capacitance(Ciss) 2.921nF
Gate Charge(Qg) 63nC@10V Description N-Channel 30V 120A 45W Surface Mount TO-252
Mfr. Part # ASDM30N120KQ-R Package TO-252
Model Number ASDM30N120KQ-R

Product Overview

The ASDM30N120KQ is a 30V N-Channel MOSFET from Ascend Semiconductor, designed for high-performance applications. It features enhancement mode operation, very low on-resistance (RDS(on)) at VGS=4.5V, and fast switching capabilities. This MOSFET is 100% avalanche tested and offers Pb-free lead plating, complying with RoHS standards. It is suitable for various industrial applications requiring efficient power management.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Product Model: ASDM30N120KQ
  • Channel Type: N-Channel
  • Compliance: RoHS compliant, Pb-free lead plating
  • Origin: Xi'an Ascend Semiconductor Incorporated
  • Package Type: TO-252-2L

Technical Specifications

Symbol Parameter Condition Min. Typ. Max. Unit
Maximum Ratings (at TA =25C, unless otherwise specified)
(BR)DSS Drain-Source breakdown voltage 30 V
IS Diode continuous forward current TC =25C 120 A
ID Continuous drain current@VGS=10V TC =25C 120 A
ID Continuous drain current@VGS=10V TC =100C 80 A
IDM Pulse drain current TC =25C 480 A
EAS Avalanche energy, single pulsed 100 mJ
PD Maximum power dissipation TC =25C 45 W
VGS Gate-Source voltage 20 V
TSTG, TJ Storage and operating temperature range -55 150 C
Thermal Characteristics
RJC Thermal Resistance-Junction to Case 2.4 C/W
RJA Thermal Resistance Junction-Ambient 62 C/W
Static Electrical Characteristics (@ Tj=25C unless otherwise stated)
(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 30 -- -- V
IDSS Zero Gate Voltage Drain Current VDS=24V,VGS=0V -- -- 1 A
IDSS Zero Gate Voltage Drain Current VDS=24V,VGS=0V -- -- 30 A
IGSS Gate-Body Leakage Current VGS=20V,VDS=0V -- -- 100 nA
VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250A 1.0 1.5 2.5 V
RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=30A -- 2.5 3.5 m
RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=30A -- 3.9 4.5 m
Dynamic Electrical Characteristics (@ Tj = 25C unless otherwise stated)
Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz -- 2921 -- pF
Coss Output Capacitance -- 440 -- pF
Crss Reverse Transfer Capacitance -- 416 -- pF
Rg Gate Resistance f=1MHz -- 1.2 --
Qg Total Gate Charge VDS=15V,ID=20A, VGS=10V -- 63 -- nC
Qgs Gate-Source Charge -- 13 -- nC
Qgd Gate-Drain Charge -- 16 -- nC
Switching Characteristics
td(on) Turn-on Delay Time VDD=20V, ID=20A, RG=3, VGS=10V -- 14 -- nS
tr Turn-on Rise Time -- 18 -- nS
td(off) Turn-Off Delay Time -- 99 -- nS
tf Turn-Off Fall Time -- 45 -- nS
Source-Drain Diode Characteristics (@ Tj = 25C unless otherwise stated)
VSD Forward on voltage ISD=20A,VGS=0V -- 0.79 1.2 V
trr Reverse Recovery Time Tj=25,Isd=20A, VGS=0V, di/dt=100A/s -- 32 -- nS
Qrr Reverse Recovery Charge -- 31 -- nC

Ordering and Marking Information

PACKAGE MARKING Ordering Device No. Marking Package Packing Quantity
TO-252 30N120 ASDM30N120KQ-R 30N120 TO-252 Tape&Reel 2500/Reel

2410121617_ASDsemi-ASDM30N120KQ-R_C2972858.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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