Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 1.7kV |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 650mΩ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2.1pF |
| Output Capacitance(Coss) | 17.1pF |
| Pd - Power Dissipation | 78W |
| Input Capacitance(Ciss) | 183pF |
| Gate Charge(Qg) | 13.2nC |
| Description | 1.7kV 8A 650mΩ 2.8V 78W TO-263-7 Single FETs, MOSFETs RoHS |
| Mfr. Part # | BCBF170N650T1 |
| Package | TO-263-7 |
| Model Number | BCBF170N650T1 |
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Product Specification
| Drain to Source Voltage | 1.7kV | Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 650mΩ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 2.1pF | Output Capacitance(Coss) | 17.1pF |
| Pd - Power Dissipation | 78W | Input Capacitance(Ciss) | 183pF |
| Gate Charge(Qg) | 13.2nC | Description | 1.7kV 8A 650mΩ 2.8V 78W TO-263-7 Single FETs, MOSFETs RoHS |
| Mfr. Part # | BCBF170N650T1 | Package | TO-263-7 |
| Model Number | BCBF170N650T1 |
The BCBF170N650T1 is a 1700V, 8A, 650m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers superior performance characteristics, including high blocking voltage, low on-resistance, and high-speed switching capabilities. These features contribute to higher system efficiency, reduced cooling requirements, increased power density, and the enablement of higher operating frequencies. The device is suitable for applications such as DC/DC converters, solar inverters, battery chargers, motor drives, and auxiliary power supplies.
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TJ = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage | 1700 | V | |||
| VGSmax | Gate to Source Voltage (AC f1Hz) | -10 / +25 | V | |||
| VGSop | Recommended Operation Value | -5 | +20 | V | ||
| ID | Drain Current | VGS=15V, (TC = 25) | 8 | A | ||
| IDM | Drain Current Pulsed (Note 1) | 17 | A | |||
| PD | Power Dissipation (TC = 25) | 78 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| RJC | Thermal Resistance, Junction to Case, Max. | 1.92 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ = 25 unless otherwise noted) | ||||||
| V(BR)DSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 100 A | 1700 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1700 V, VGS = 0 V | 0.9 | 100 | A | |
| IGSS | Gate-Source Leakage Current | VGS = +20 V | 250 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 0.5 mA | 1.8 | 4.0 | V | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 20 V, ID = 2 A | 550 | 1000 | m | |
| VGS = 18 V, ID = 2 A | 650 | m | ||||
| ID | Drain Current | VGS=20V, (TC = 25) | 8.6 | A | ||
| ID | Drain Current | VGS=15V, ( TC = 100) | 6 | A | ||
| Ciss | Input Capacitance | VGS = 0V, VDS = 1000 V, f = 1.0 MHz ,VAC = 25 mV | 183 | pF | ||
| Coss | Output Capacitance | 17.1 | pF | |||
| Crss | Reverse Capacitance | 2.1 | pF | |||
| Eoss | Stored Energy in Output Capacitance | 10.1 | J | |||
| Qg(tot) | Total Gate Charge | VDS = 1200 V, ID = 2 A, VGS = -5 V / +20 V | 13.2 | nC | ||
| Qgs | Gate to Source Charge | 5.0 | nC | |||
| Qgd | Gate to Drain Miller Charge | 4.5 | nC | |||
| RG | Internal Gate Resistance | f = 1.0 MHz, VAC = 25 mV | 25.2 | |||
| td(on) | Turn-On Delay Time | VDS = 1000 V, ID = 2 A, VGS = -5 V / +20V, RG(ext) = 2.5 , L = 70 mH | 5 | ns | ||
| tr | Turn-On Rise Time | 17 | ns | |||
| td(off) | Turn-Off Delay Time | 13 | ns | |||
| tf | Turn-Off Fall Time | 55.6 | ns | |||
| Eon | Turn-on Switching Energy | 170 | J | |||
| Eoff | Turn-off Switching Energy | 68 | J | |||
| IS | Maximum Continuous Diode Forward Current | 8 | A | |||
| VSD | Diode Forward Voltage | VGS = 0 V, IS = 1 A | 4.0 | V | ||
| trr | Reverse Recovery Time | VDS = 1200 V, IS = 2 A, VGS=-5V, di/dt = 1200 A/ s | 33 | ns | ||
| Qrr | Reverse Recovery Charge | 32 | nC | |||
| Irrm | Peak Reverse Recovery Current | 2.8 | A | |||
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BCBF170N650T1 | BCBF170N650T1 | TO263-7 | Tape & Reel | 800 units |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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