Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | - |
| Current - Continuous Drain(Id) | - |
| RDS(on) | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | - |
| Input Capacitance(Ciss) | - |
| Pd - Power Dissipation | - |
| Gate Charge(Qg) | - |
| Description | DFN-6L(2x2) Single FETs, MOSFETs RoHS |
| Mfr. Part # | AW3112DNR |
| Package | DFN-6L(2x2) |
| Model Number | AW3112DNR |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | - | Current - Continuous Drain(Id) | - |
| RDS(on) | - | Gate Threshold Voltage (Vgs(th)) | - |
| Reverse Transfer Capacitance (Crss@Vds) | - | Number | - |
| Input Capacitance(Ciss) | - | Pd - Power Dissipation | - |
| Gate Charge(Qg) | - | Description | DFN-6L(2x2) Single FETs, MOSFETs RoHS |
| Mfr. Part # | AW3112DNR | Package | DFN-6L(2x2) |
| Model Number | AW3112DNR |
The AW3112 is a 30V PNP power bipolar transistor integrated with a 20V trench NMOSFET, functioning as a base switch. Manufactured using planar epitaxial process technology, it offers a low collector-emitter saturation voltage and high current gain, making it particularly suitable for high-current linear charging of lithium batteries. The device is available in a compact DFN2X2-6L package and operates within a temperature range of -40 to +150. Key applications include battery charging and power management for portable electronic devices.
| Model | Operating Temperature Range | Package Type | Device Marking | Delivery Form |
|---|---|---|---|---|
| AW3112DNR | -40~150 | DFN2X2-6L | AW12 | Tape & Reel (3000 pcs/) |
| Parameter | Rating | Unit |
|---|---|---|
| 30V PNP BJT Absolute Maximum Ratings | ||
| Collector-Base Voltage (Vcbo) | -40 | V |
| Collector-Emitter Voltage (Vceo) | -32 | V |
| Emitter-Base Voltage (Vebo) | -6 | V |
| Collector Current (Ic) | -3 | A |
| Collector Peak Current (Icm) | -6 | A |
| 20V NMOSFET Absolute Maximum Ratings | ||
| Drain-Source Voltage (Vdss) | 20 | V |
| Gate-Source Voltage (Vgss) | 8 | V |
| Drain Current (Id) | 180 | mA |
| Drain Peak Current (Idp) | 360 | mA |
| Temperature, Power Dissipation, and Thermal Resistance | ||
| Power Dissipation (Ptot) | 1.5 | W |
| Junction Temperature (Tj) | 150 | |
| Storage Temperature (Tstg) | -65~150 | |
| Lead Temperature (Tl) | 260 | |
| Thermal Resistance Coefficient ( JA) | 85.6 | /W |
| Symbol | Parameter | Test Conditions | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| 30V PNP BJT Electrical Characteristics (T=25 unless otherwise specified) | ||||||
| BVceo | Collector-Emitter Breakdown Voltage | Ic=-10mA, Ib=0mA | -32 | V | ||
| BVcbo | Collector-Base Breakdown Voltage | Ic=-0.1mA, Ie=0mA | -40 | V | ||
| BVebo | Emitter-Base Breakdown Voltage | Ie=-1mA, Ic=0mA | -6 | V | ||
| Icbo | Collector Leakage Current | Vcb=-30V | -0.1 | uA | ||
| Iebo | Emitter Leakage Current | Veb=-5V | -0.1 | uA | ||
| Vce(sat) | Collector-Emitter Saturation Voltage | Ic=-1A, Ib=-20mA | -0.35 | V | ||
| Vbe(sat) | Base-Emitter Saturation Voltage | Ic=-1A, Ib=-20mA | -1.2 | V | ||
| HFE1 | DC Current Gain (High Current) | Ic=-1A, Vce=-2V | 100 | |||
| HFE2 | DC Current Gain (Low Current) | Ic=-0.1A, Vce=-2V | 200 | |||
| 20V NMOSFET Electrical Characteristics (T=25 unless otherwise specified) | ||||||
| BVdss | Drain-Source Breakdown Voltage | Vgs=0V, Ids=250uA | 20 | V | ||
| Vth | Threshold Voltage | Vgs=Vds, Ids=250uA | 0.4 | 1.0 | V | |
| Igss | Gate Leakage Current | Vds=0V, Vgs=8V | 100 | nA | ||
| Idss | Drain Leakage Current | Vgs=0V, Vds=20V | 1 | uA | ||
| Rds(on) | Drain-Source On-Resistance | Vgs=2.5V, Id=50mA | 0.5 | |||
| Rds(on) | Drain-Source On-Resistance | Vgs=1.5V, Id=50mA | 1 | |||
| Vsd | Body Diode Forward Voltage | Isd=1A, Vgs=0V | 0.5 | 1.2 | V | |
| Symbol | Dimensions | Unit |
|---|---|---|
| DFN2X2-6L Package Dimensions | ||
| A | 0.700 - 0.750 - 0.800 | mm |
| A1 | 0.000 - 0.025 - 0.050 | mm |
| A3 | 0.203 REF | |
| D | 1.924 - 2.000 - 2.076 | mm |
| E | 1.924 - 2.000 - 2.076 | mm |
| D1 | 0.850 - 0.950 - 1.050 | mm |
| E1 | 0.700 - 0.800 - 0.900 | mm |
| D2 | 0.200 - 0.300 - 0.400 | mm |
| E2 | 0.700 - 0.800 - 0.900 | mm |
| e1 | 0.650 TYP | |
| e2 | 0.325 TYP | |
| k | 0.200 MIN | |
| b | 0.250 - 0.300 - 0.350 | mm |
| e | 0.650 TYP | |
| L | 0.300 - 0.350 - 0.400 | mm |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!