China factories

Chat Now Send Email
China factory - Hefei Purple Horn E-Commerce Co., Ltd.

Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
  • Verified Supplier
  1. Home
  2. Products
  3. About Us
  4. Contact Us

Leave a Message

we will call you back quickly!

Submit Requirement
China Low On Resistance N Channel Power MOSFET Bestirpower BML60N120UC1 600 Volt 28
China Low On Resistance N Channel Power MOSFET Bestirpower BML60N120UC1 600 Volt 28

  1. China Low On Resistance N Channel Power MOSFET Bestirpower BML60N120UC1 600 Volt 28

Low On Resistance N Channel Power MOSFET Bestirpower BML60N120UC1 600 Volt 28

  1. MOQ:
  2. Price:
  3. Get Latest Price
Drain to Source Voltage 600V
Current - Continuous Drain(Id) 23A
RDS(on) 120mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 4V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 4pF@50V
Number 1 N-channel
Pd - Power Dissipation 152W
Input Capacitance(Ciss) 2.38nF@50V
Gate Charge(Qg) 53nC
Description 600V 23A 120mΩ@10V 4V@250uA 1 N-channel 152W DFN-8(8x8) Single FETs, MOSFETs RoHS
Mfr. Part # BML60N120UC1
Package DFN-8(8x8)
Model Number BML60N120UC1

View Detail Information

Inquiry by Email Get Latest Price
Chat online Now Ask for best deal
  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 600V Current - Continuous Drain(Id) 23A
RDS(on) 120mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 4V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 4pF@50V Number 1 N-channel
Pd - Power Dissipation 152W Input Capacitance(Ciss) 2.38nF@50V
Gate Charge(Qg) 53nC Description 600V 23A 120mΩ@10V 4V@250uA 1 N-channel 152W DFN-8(8x8) Single FETs, MOSFETs RoHS
Mfr. Part # BML60N120UC1 Package DFN-8(8x8)
Model Number BML60N120UC1

Product Overview

The BML60N120UC1 is a high-performance N-Channel Power MOSFET from Bestirpower, engineered with advanced super junction technology for exceptionally low on-resistance and gate charge. This device offers significant efficiency gains through optimized charge coupling, resulting in low conduction and switching losses, and a low EMI profile. It is qualified for industrial grade applications according to JEDEC standards, making it ideal for AC/DC power supplies, PC power, telecom/server applications, and solar inverters.

Product Attributes

  • Brand: Bestirpower
  • Technology: Advanced Super Junction
  • Grade: Industrial Grade (JEDEC qualified)
  • Diode: Ultra-fast body diode

Technical Specifications

Model BML60N120UC1 Unit
Features Ultra-fast body diode, Extremely low losses (low FOM Rdson*Qg and Eoss), Very high commutation ruggedness
Description N-Channel Power MOSFET using advanced super junction technology
Voltage Rating 600 V
Current Rating 28 A
On-Resistance (RDS(on)) 120 m
Total Gate Charge (Qg) 53 nC
Applications AC/DC power supply, PC power, Telecom/Server, Solar inverter
Absolute Maximum Ratings
Drain to Source Voltage (VDSS) 600 V
Gate to Source Voltage (VGSS) 30 V
Drain Current Continuous (TC = 25) 23 A
Drain Current Continuous (TC = 125) 10 A
Drain Current Pulsed (TC = 25) (IDM) 84 A
Single Pulsed Avalanche Energy (EAS) 506 mJ
Repetitive Avalanche Energy (IAR) 4.5 A
MOSFET dv/dt 50 V/ns
Peak Diode Recovery dv/dt 50 V/ns
Power Dissipation (Ptot) (TC = 25) 152 W
Operating and Storage Temperature Range (TJ, TSTG) -55 to 150
Soldering temperature (Tsold) 260
Thermal Characteristics
Thermal Resistance, Junction to Case (RJC) Max. 0.82 /W
Thermal Resistance, Junction to Ambient (RJA) Max. 62 /W
Package Marking and Ordering Information
Part Number BML60N120UC1
Top Marking BML60N120UC1
Package DFN8*8
Packing Method Tape & Reel
Quantity 5000 units
Electrical Characteristics (TC = 25 unless otherwise noted)
Off Characteristics
Drain-Source Breakdown Voltage (BVDSS) 600 V
Zero Gate Voltage Drain Current (IDSS) 10 A
Gate-Source Leakage Current (IGSS) 100 nA
On Characteristics
Gate Threshold Voltage (VGS(th)) 3.0 - 5.0 V
Static Drain to Source On Resistance (RDS(on)) 100 - 120 m
Dynamic Characteristics
Input Capacitance (Ciss) 2380 pF
Output Capacitance (Coss) 89 pF
Reverse transfer capacitance (Crss) 4 pF
Energy Related Output Capacitance (Co(er)) 73 pF
Time Related Output Capacitance (Co(tr)) 379 pF
Total Gate Charge (Qg(tot)) at 10 V 53 nC
Gate to Source Charge (Qgs) 15 nC
Gate to Drain Miller Charge (Qgd) 18 nC
Gate Resistance (RG) 4.0
Switching Characteristics
Turn-On Delay Time (td(on)) 15 ns
Turn-On Rise Time (tr) 24 ns
Turn-Off Delay Time (td(off)) 72 ns
Turn-Off Fall Time (tf) 6 ns
Source-Drain Diode Characteristics
Maximum Continuous Diode Forward Current (IS) 23 A
Diode Forward Voltage (VSD) 0.85 V
Reverse Recovery Time (trr) 160 ns
Reverse Recovery Charge (Qrr) 1.03 C
Peak reverse recovery current (Imm) 12 A

2504101957_Bestirpower-BML60N120UC1_C46472751.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

+ Read More

Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement