| Drain to Source Voltage | 85V |
| Current - Continuous Drain(Id) | 120A |
| RDS(on) | 5mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| Pd - Power Dissipation | 173.6W |
| Gate Charge(Qg) | 80nC@10V |
| Description | N-Channel 85V 120A 173.6W Surface Mount TO-263 |
| Mfr. Part # | BLP05N08G-B |
| Package | TO-263 |
| Model Number | BLP05N08G-B |
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Product Specification
| Drain to Source Voltage | 85V | Current - Continuous Drain(Id) | 120A |
| RDS(on) | 5mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | Pd - Power Dissipation | 173.6W |
| Gate Charge(Qg) | 80nC@10V | Description | N-Channel 85V 120A 173.6W Surface Mount TO-263 |
| Mfr. Part # | BLP05N08G-B | Package | TO-263 |
| Model Number | BLP05N08G-B |
The BLP05N08G is an N-channel Enhanced Power MOSFET manufactured using advanced double trench technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is ideally suited for demanding applications such as motor drivers and high-speed switching circuits. Key features include fast switching, low on-resistance (RDS(on) 5m), low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. The product is RoHS compliant.
| Category | Parameter | Value | Unit | Conditions |
|---|---|---|---|---|
| Key Characteristics | VDSS | 85 | V | |
| ID | 120 | A | ||
| RDS(on) typ | 4.4 | m | ||
| Absolute Ratings | VDSS | 85 | V | TC=25C |
| ID (Silicon Limited) | 138 | A | TC=25C | |
| ID (Package Limited) | 120 | A | TC=25C | |
| ID @TC=100C (Silicon Limited) | 87.4 | A | ||
| IDM (Pulsed Drain Current) | 480 | A | Note1 | |
| VGS | 20 | V | ||
| EAS (Avalanche Energy) | 156 | mJ | Note2 | |
| PD (Power Dissipation) | 173.6 | W | ||
| Derating Factor above 25C | 1.39 | W/ | ||
| TJ, Tstg (Operating & Storage Temp) | -55 to 150 | |||
| Thermal Characteristics | RJC (Junction-Case) | 0.72 | /W | |
| RJA (Junction-Ambient) | 62.5 | /W | ||
| Electrical Characteristics (OFF) | VDSS (Drain-Source Breakdown Voltage) | 85 | V | VGS=0V, ID=250A |
| IDSS (Drain-Source Leakage Current) | 1 | A | VDS=85V, VGS=0V | |
| IDSS @TC=125C | 100 | A | VDS=68V, VGS=0V | |
| IGSS(F) (Gate-Source Forward Leakage) | 100 | nA | VGS=+20V | |
| IGSS(R) (Gate-Source Reverse Leakage) | -100 | nA | VGS=-20V | |
| Electrical Characteristics (ON) | RDS(on) (Drain-Source On-Resistance) | 4.4 (Typ), 5 (Max) | m | VGS=10V, ID=50A |
| VGS(th) (Gate Threshold Voltage) | 2.0 (Min), 3.0 (Typ), 4.0 (Max) | V | VDS=VGS, ID=250A | |
| RDS(on) | 5 | m | ||
| Dynamic Characteristics | Ciss (Input Capacitance) | 4021 | pF | VDS=40V, VGS=0, f=1MHz |
| Coss (Output Capacitance) | 637 | pF | ||
| Crss (Reverse Transfer Capacitance) | 17 | pF | ||
| Qg (Total Gate Charge) | 80 | nC | VDD=40V, ID=50A, VGS=10V | |
| Switching Characteristics | td(on) (Turn-On Delay Time) | 22 | ns | VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load |
| tr (Rise Time) | 42 | ns | ||
| td(off) (Turn-Off Delay Time) | 48 | ns | ||
| tf (Fall Time) | 25 | ns | ||
| Source-Drain Diode Characteristics | IS (Continuous Source Current) | 120 | A | |
| ISM (Maximum Pulsed Current) | 480 | A | ||
| VSD (Diode Forward Voltage) | 1.2 | V | VGS=0V, IS=50A | |
| Trr (Reverse Recovery Time) | 60 | ns | Is=20A, di/dt=100A/us | |
| Qrr (Reverse Recovery Charge) | 136 | uC | ||
| Ordering Information | Ordering Code | BLP05N08G-B | TO-263 Package, Reel Packing | |
| Ordering Code | BLP05N08G-P | TO-220 Package, Tube Packing | ||
| Package Dimensions (TO-263) | A | 9.80 - 10.40 | mm | |
| B | 8.90 - 9.50 | mm | ||
| Package Dimensions (TO-220) | A | 9.60 - 10.6 | mm | |
| B | 15.0 - 16.0 | mm |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: L=0.5mH, Ias=25A, Start TJ =25.
Applications: Switching applications, Motor drivers.
Features: Fast Switching, Low On-Resistance (RDS(on)5m), Low Gate Charge, Low Reverse transfer capacitances, High avalanche ruggedness.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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