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Hefei Purple Horn E-Commerce Co., Ltd.

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China Power MOSFET BL BLP05N08G B Featuring Fast Switching and Low Gate Charge for
China Power MOSFET BL BLP05N08G B Featuring Fast Switching and Low Gate Charge for

  1. China Power MOSFET BL BLP05N08G B Featuring Fast Switching and Low Gate Charge for

Power MOSFET BL BLP05N08G B Featuring Fast Switching and Low Gate Charge for

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Drain to Source Voltage 85V
Current - Continuous Drain(Id) 120A
RDS(on) 5mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 4V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 17pF
Pd - Power Dissipation 173.6W
Gate Charge(Qg) 80nC@10V
Description N-Channel 85V 120A 173.6W Surface Mount TO-263
Mfr. Part # BLP05N08G-B
Package TO-263
Model Number BLP05N08G-B

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 85V Current - Continuous Drain(Id) 120A
RDS(on) 5mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 4V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 17pF Pd - Power Dissipation 173.6W
Gate Charge(Qg) 80nC@10V Description N-Channel 85V 120A 173.6W Surface Mount TO-263
Mfr. Part # BLP05N08G-B Package TO-263
Model Number BLP05N08G-B

Product Overview

The BLP05N08G is an N-channel Enhanced Power MOSFET manufactured using advanced double trench technology. This technology significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is ideally suited for demanding applications such as motor drivers and high-speed switching circuits. Key features include fast switching, low on-resistance (RDS(on) 5m), low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. The product is RoHS compliant.

Product Attributes

  • Brand: Belling
  • Origin: China (implied by .cn domain and company contact details)
  • Certifications: RoHS

Technical Specifications

Category Parameter Value Unit Conditions
Key Characteristics VDSS 85 V
ID 120 A
RDS(on) typ 4.4 m
Absolute Ratings VDSS 85 V TC=25C
ID (Silicon Limited) 138 A TC=25C
ID (Package Limited) 120 A TC=25C
ID @TC=100C (Silicon Limited) 87.4 A
IDM (Pulsed Drain Current) 480 A Note1
VGS 20 V
EAS (Avalanche Energy) 156 mJ Note2
PD (Power Dissipation) 173.6 W
Derating Factor above 25C 1.39 W/
TJ, Tstg (Operating & Storage Temp) -55 to 150
Thermal Characteristics RJC (Junction-Case) 0.72 /W
RJA (Junction-Ambient) 62.5 /W
Electrical Characteristics (OFF) VDSS (Drain-Source Breakdown Voltage) 85 V VGS=0V, ID=250A
IDSS (Drain-Source Leakage Current) 1 A VDS=85V, VGS=0V
IDSS @TC=125C 100 A VDS=68V, VGS=0V
IGSS(F) (Gate-Source Forward Leakage) 100 nA VGS=+20V
IGSS(R) (Gate-Source Reverse Leakage) -100 nA VGS=-20V
Electrical Characteristics (ON) RDS(on) (Drain-Source On-Resistance) 4.4 (Typ), 5 (Max) m VGS=10V, ID=50A
VGS(th) (Gate Threshold Voltage) 2.0 (Min), 3.0 (Typ), 4.0 (Max) V VDS=VGS, ID=250A
RDS(on) 5 m
Dynamic Characteristics Ciss (Input Capacitance) 4021 pF VDS=40V, VGS=0, f=1MHz
Coss (Output Capacitance) 637 pF
Crss (Reverse Transfer Capacitance) 17 pF
Qg (Total Gate Charge) 80 nC VDD=40V, ID=50A, VGS=10V
Switching Characteristics td(on) (Turn-On Delay Time) 22 ns VDD=40V, ID=50A, VGS=10V, RG=3, Resistive Load
tr (Rise Time) 42 ns
td(off) (Turn-Off Delay Time) 48 ns
tf (Fall Time) 25 ns
Source-Drain Diode Characteristics IS (Continuous Source Current) 120 A
ISM (Maximum Pulsed Current) 480 A
VSD (Diode Forward Voltage) 1.2 V VGS=0V, IS=50A
Trr (Reverse Recovery Time) 60 ns Is=20A, di/dt=100A/us
Qrr (Reverse Recovery Charge) 136 uC
Ordering Information Ordering Code BLP05N08G-B TO-263 Package, Reel Packing
Ordering Code BLP05N08G-P TO-220 Package, Tube Packing
Package Dimensions (TO-263) A 9.80 - 10.40 mm
B 8.90 - 9.50 mm
Package Dimensions (TO-220) A 9.60 - 10.6 mm
B 15.0 - 16.0 mm

Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: L=0.5mH, Ias=25A, Start TJ =25.

Applications: Switching applications, Motor drivers.

Features: Fast Switching, Low On-Resistance (RDS(on)5m), Low Gate Charge, Low Reverse transfer capacitances, High avalanche ruggedness.


2410121258_BL-BLP05N08G-B_C2924856.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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