| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 10A |
| RDS(on) | 12.5mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 151pF |
| Number | 2 N-Channel |
| Output Capacitance(Coss) | 187pF |
| Input Capacitance(Ciss) | 1.527nF |
| Pd - Power Dissipation | 2W |
| Gate Charge(Qg) | 18.8nC@10V |
| Description | N-Channel Array 30V 10A 2W Surface Mount TSSOP-8 |
| Mfr. Part # | AKL30N5P0SD |
| Package | TSSOP-8 |
| Model Number | AKL30N5P0SD |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 10A |
| RDS(on) | 12.5mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 151pF | Number | 2 N-Channel |
| Output Capacitance(Coss) | 187pF | Input Capacitance(Ciss) | 1.527nF |
| Pd - Power Dissipation | 2W | Gate Charge(Qg) | 18.8nC@10V |
| Description | N-Channel Array 30V 10A 2W Surface Mount TSSOP-8 | Mfr. Part # | AKL30N5P0SD |
| Package | TSSOP-8 | Model Number | AKL30N5P0SD |
The AKL30N5P0SD is a 30V Dual N-Channel Enhancement Mode MOSFET from ARK Microelectronics, designed for high-efficiency applications. It features low RDS(ON) and low gate charge, utilizing advanced high cell density trench technology. This RoHS compliant and Halogen-free available component is suitable for DC/DC converters, synchronous rectification, UPS inverters, power management, battery-powered systems, and load switches.
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSX | -- | -- | 30 | V | TA=25 unless otherwise specified [1] |
| Drain-to-Gate Voltage | VDGX | -- | -- | 30 | V | TA=25 unless otherwise specified [1] |
| Continuous Drain Current | ID | -- | -- | 10 | A | TA=25 unless otherwise specified |
| Pulsed Drain Current | IDM | -- | -- | 35 | A | TA=25 unless otherwise specified [2] |
| Power Dissipation | PD | -- | -- | 2 | W | TA=25 unless otherwise specified |
| Gate-to-Source Voltage | VGS | -- | -- | ±20 | V | TA=25 unless otherwise specified |
| Soldering Temperature | TL | -- | -- | 300 | Distance of 1.6mm from case for 10 seconds | |
| Operating and Storage Temperature Range | TJ & TSTG | -55 | -- | 150 | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | -- | 62.5 | -- | /W | |
| OFF Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSX | 30 | -- | -- | V | VGS=0V, ID=250µA |
| Drain-to-Source Leakage Current | IDSS | -- | -- | 1 | µA | VDS=30V, VGS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | 100 | nA | VGS=20V, VDS=0V |
| Gate-to-Source Leakage Current | IGSS | -- | -- | -100 | nA | VGS=-20V, VDS=0V |
| ON Characteristics | ||||||
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 8.0 | 12.5 | mΩ | VGS=10V, ID=8A [3] |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 9.5 | 13.5 | mΩ | VGS=4.5V, ID=5A [3] |
| Static Drain-to-Source On-Resistance | RDS(ON) | -- | 11.5 | 15 | mΩ | VGS=3.8V, ID=5A [3] |
| Gate Threshold Voltage | VGS(TH) | 1.0 | -- | 2.0 | V | VGD=0V, ID=250µA |
| Forward Transconductance | gfs | -- | 18 | -- | S | VDS=5V, ID=8A |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | -- | 1527 | -- | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Output Capacitance | Coss | -- | 187 | -- | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Reverse Transfer Capacitance | Crss | -- | 151 | -- | pF | VGS=0V, VDS=15V, f=1.0MHz |
| Total Gate Charge | Qg | -- | 18.8 | -- | nC | VGS=10V, VDS=15V, ID=10A |
| Gate-to-Source Charge | Qgs | -- | 6.0 | -- | nC | VGS=10V, VDS=15V, ID=10A |
| Gate-to-Drain (Miller) Charge | Qgd | -- | 6.6 | -- | nC | VGS=10V, VDS=15V, ID=10A |
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | -- | 16 | -- | ns | VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω |
| Rise Time | trise | -- | 45 | -- | ns | VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω |
| Turn-off Delay Time | td(off) | -- | 38 | -- | ns | VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω |
| Fall Time | tfall | -- | 14 | -- | ns | VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | -- | -- | 1.2 | V | ISD=3A, VGS=0V |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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