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Hefei Purple Horn E-Commerce Co., Ltd.

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China Low rds on dual n channel mosfet ARK micro AKL30N5P0SD 30 volt enhancement mode
China Low rds on dual n channel mosfet ARK micro AKL30N5P0SD 30 volt enhancement mode

  1. China Low rds on dual n channel mosfet ARK micro AKL30N5P0SD 30 volt enhancement mode

Low rds on dual n channel mosfet ARK micro AKL30N5P0SD 30 volt enhancement mode

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Drain to Source Voltage 30V
Current - Continuous Drain(Id) 10A
RDS(on) 12.5mΩ@10V
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2V@250uA
Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 151pF
Number 2 N-Channel
Output Capacitance(Coss) 187pF
Input Capacitance(Ciss) 1.527nF
Pd - Power Dissipation 2W
Gate Charge(Qg) 18.8nC@10V
Description N-Channel Array 30V 10A 2W Surface Mount TSSOP-8
Mfr. Part # AKL30N5P0SD
Package TSSOP-8
Model Number AKL30N5P0SD

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  1. Product Details
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Product Specification

Drain to Source Voltage 30V Current - Continuous Drain(Id) 10A
RDS(on) 12.5mΩ@10V Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 2V@250uA Type N-Channel
Reverse Transfer Capacitance (Crss@Vds) 151pF Number 2 N-Channel
Output Capacitance(Coss) 187pF Input Capacitance(Ciss) 1.527nF
Pd - Power Dissipation 2W Gate Charge(Qg) 18.8nC@10V
Description N-Channel Array 30V 10A 2W Surface Mount TSSOP-8 Mfr. Part # AKL30N5P0SD
Package TSSOP-8 Model Number AKL30N5P0SD

ARK Microelectronics AKL30N5P0SD Dual N-Channel MOSFET

The AKL30N5P0SD is a 30V Dual N-Channel Enhancement Mode MOSFET from ARK Microelectronics, designed for high-efficiency applications. It features low RDS(ON) and low gate charge, utilizing advanced high cell density trench technology. This RoHS compliant and Halogen-free available component is suitable for DC/DC converters, synchronous rectification, UPS inverters, power management, battery-powered systems, and load switches.

Product Attributes

  • Brand: ARK Microelectronics Co., Ltd.
  • Product Line: AKL30N5P0SD
  • Certifications: RoHS Compliant, Halogen-free Available

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Absolute Maximum Ratings
Drain-to-Source Voltage VDSX -- -- 30 V TA=25 unless otherwise specified [1]
Drain-to-Gate Voltage VDGX -- -- 30 V TA=25 unless otherwise specified [1]
Continuous Drain Current ID -- -- 10 A TA=25 unless otherwise specified
Pulsed Drain Current IDM -- -- 35 A TA=25 unless otherwise specified [2]
Power Dissipation PD -- -- 2 W TA=25 unless otherwise specified
Gate-to-Source Voltage VGS -- -- ±20 V TA=25 unless otherwise specified
Soldering Temperature TL -- -- 300 Distance of 1.6mm from case for 10 seconds
Operating and Storage Temperature Range TJ & TSTG -55 -- 150
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient RJA -- 62.5 -- /W
OFF Characteristics
Drain-to-Source Breakdown Voltage BVDSX 30 -- -- V VGS=0V, ID=250µA
Drain-to-Source Leakage Current IDSS -- -- 1 µA VDS=30V, VGS=0V
Gate-to-Source Leakage Current IGSS -- -- 100 nA VGS=20V, VDS=0V
Gate-to-Source Leakage Current IGSS -- -- -100 nA VGS=-20V, VDS=0V
ON Characteristics
Static Drain-to-Source On-Resistance RDS(ON) -- 8.0 12.5 VGS=10V, ID=8A [3]
Static Drain-to-Source On-Resistance RDS(ON) -- 9.5 13.5 VGS=4.5V, ID=5A [3]
Static Drain-to-Source On-Resistance RDS(ON) -- 11.5 15 VGS=3.8V, ID=5A [3]
Gate Threshold Voltage VGS(TH) 1.0 -- 2.0 V VGD=0V, ID=250µA
Forward Transconductance gfs -- 18 -- S VDS=5V, ID=8A
Dynamic Characteristics
Input Capacitance Ciss -- 1527 -- pF VGS=0V, VDS=15V, f=1.0MHz
Output Capacitance Coss -- 187 -- pF VGS=0V, VDS=15V, f=1.0MHz
Reverse Transfer Capacitance Crss -- 151 -- pF VGS=0V, VDS=15V, f=1.0MHz
Total Gate Charge Qg -- 18.8 -- nC VGS=10V, VDS=15V, ID=10A
Gate-to-Source Charge Qgs -- 6.0 -- nC VGS=10V, VDS=15V, ID=10A
Gate-to-Drain (Miller) Charge Qgd -- 6.6 -- nC VGS=10V, VDS=15V, ID=10A
Resistive Switching Characteristics
Turn-on Delay Time td(on) -- 16 -- ns VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω
Rise Time trise -- 45 -- ns VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω
Turn-off Delay Time td(off) -- 38 -- ns VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω
Fall Time tfall -- 14 -- ns VGS=10V, VDD=15V, RL=2.3Ω, RG=3.3Ω
Source-Drain Diode Characteristics
Diode Forward Voltage VSD -- -- 1.2 V ISD=3A, VGS=0V

2410171116_ARK-micro-AKL30N5P0SD_C41432017.pdf

Company Details

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,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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