| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 11A |
| RDS(on) | 380mΩ@10V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 801pF |
| Pd - Power Dissipation | 30W |
| Output Capacitance(Coss) | 28pF |
| Gate Charge(Qg) | 19nC@10V |
| Description | 650V 11A 30W Through Hole TO-220F |
| Mfr. Part # | BMF65N380E2 |
| Package | TO-220F |
| Model Number | BMF65N380E2 |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 650V | Current - Continuous Drain(Id) | 11A |
| RDS(on) | 380mΩ@10V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 3.8pF | Number | 1 N-channel |
| Input Capacitance(Ciss) | 801pF | Pd - Power Dissipation | 30W |
| Output Capacitance(Coss) | 28pF | Gate Charge(Qg) | 19nC@10V |
| Description | 650V 11A 30W Through Hole TO-220F | Mfr. Part # | BMF65N380E2 |
| Package | TO-220F | Model Number | BMF65N380E2 |
The BMF65N380E2 is a 650V, 11A, 380m Super Junction Power MOSFET from Bestirpower, leveraging advanced super junction technology to achieve very low on-resistance and gate charge. Optimized charge coupling technology enables high efficiency, while user-friendly design provides Low EMI and low switching loss. This MOSFET is ideal for Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), Power Factor Correction (PFC), and chargers.
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Drain to Source Voltage (BVDSS @ TJ,max) | 700 | V | |
| Drain Current (ID) | 11 | A | (continuous) VGS=10V, TC = 25 |
| On-Resistance (RDS(on),max) | 380 | m | |
| Total Gate Charge (Qg,typ) | 19 | nC | |
| Drain to Source Voltage (VDSS) | 650 | V | |
| Gate to Source Voltage (VGSS) | 30 | V | |
| Drain Current (continuous) (ID) | 11 | A | VGS=10V, TC = 25 |
| Drain Current (continuous) (ID) | 7.4 | A | VGS=10V, TC = 100 |
| Drain Current Pulsed (IDM) | 33 | A | (Note1) |
| Single Pulsed Avalanche Energy (EAS) | 245 | mJ | (Note2) |
| Avalanche Current (IAS) | 7 | A | (Note2) |
| MOSFET dv/dt | 50 | V/ns | |
| Peak Diode Recovery dv/dt | 15 | V/ns | (Note3) |
| Power Dissipation (PD) | 30 | W | (TC = 25) |
| Power Dissipation Derating | 0.24 | W/ | Above 25 |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | ||
| Thermal Resistance, Junction to Case (RJC) | 4.1 | /W | Max. |
| Thermal Resistance, Junction to Ambient (RJA) | 62 | /W | Max. |
| Soldering temperature (Tsold) | 260 | wave soldering only allowed at leads | |
| Drain to Source Breakdown Voltage (BVDSS) | 650 | V | VGS = 0 V, ID = 250 uA |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS = 650 V, VGS = 0 V |
| Gate-Source Leakage Current (IGSS) | 100 | nA | VGS = 30 V, VDS = 0 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V | VGS = VDS, ID = 250 uA |
| Static Drain to Source On Resistance (RDS(on)) | 325 - 380 | m | VGS = 10 V, ID = 4.8 ATJ = 25 |
| Static Drain to Source On Resistance (RDS(on)) | 813 - 950 | m | VGS = 10 V, ID = 4.8 ATJ = 150 |
| Input Capacitance (Ciss) | 801 | pF | VDS = 400 V, VGS = 0 V, f = 250 kHz |
| Output Capacitance (Coss) | 28 | pF | |
| Reverse transfer capacitance (Crss) | 3.8 | pF | |
| Total Gate Charge (Qg(tot)) | 19 | nC | at 10 V, VDS = 400 VID=5.5 A, VGS = 10 V |
| Gate to Source Charge (Qgs) | 2.9 | nC | |
| Gate to Drain Miller Charge (Qgd) | 9.7 | nC | |
| Gate Resistance (RG) | 5.6 | f = 1 MHzOpen Drain | |
| Turn-On Delay Time (td(on)) | 16 | ns | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 |
| Turn-On Rise Time (tr) | 6 | ns | |
| Turn-Off Delay Time (td(off)) | 29 | ns | |
| Turn-Off Fall Time (tf) | 22 | ns | |
| Maximum Continuous Diode Forward Current (IS) | 11 | A | |
| Maximum Pulsed Diode Forward Current (ISM) | 33 | A | |
| Diode Forward Voltage (VSD) | 0.9 - 1.2 | V | VGS = 0 V, ISD = 11 A |
| Reverse Recovery Time (trr) | 198 | ns | VDD = 400 V, ISD = 5.5A, dIF/dt = 100 A/s |
| Reverse Recovery Charge (Qrr) | 1.93 | C |
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BMF65N380E2 | BMF65N380E2 | TO220F | Tube | 50 units |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!