| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 100mA |
| Operating Temperature - | -55℃~+150℃ |
| RDS(on) | 700Ω;30Ω |
| Gate Threshold Voltage (Vgs(th)) | 27V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF |
| Pd - Power Dissipation | 1.5W |
| Input Capacitance(Ciss) | 12.3pF |
| Gate Charge(Qg) | 1.55nC |
| Description | N-Channel 600V 0.1A 1.5W Surface Mount SOP-7 |
| Mfr. Part # | DME6010D |
| Package | SOP-7 |
| Model Number | DME6010D |
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Product Specification
| Drain to Source Voltage | 600V | Current - Continuous Drain(Id) | 100mA |
| Operating Temperature - | -55℃~+150℃ | RDS(on) | 700Ω;30Ω |
| Gate Threshold Voltage (Vgs(th)) | 27V | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 1.8pF | Pd - Power Dissipation | 1.5W |
| Input Capacitance(Ciss) | 12.3pF | Gate Charge(Qg) | 1.55nC |
| Description | N-Channel 600V 0.1A 1.5W Surface Mount SOP-7 | Mfr. Part # | DME6010D |
| Package | SOP-7 | Model Number | DME6010D |
The DME6010D integrates a 600V depletion mode MOSFET for startup and a 100V depletion mode MOSFET with patented UltraVt for stable and safe voltage regulation. This non-isolated high voltage regulator is designed for PD and QC chargers, offering cost and space savings. Key features include proprietary advanced planar technology, rugged polysilicon gate cell structure, and advanced high Vth technology.
| Part Number | 600V MOSFET Parameters | 100V MOSFET Parameters | Package | Remark |
| DME6010D | Drain-to-Source Breakdown Voltage (BVDSSX): 600V Drain-to-Source Leakage Current (ID(OFF)): 0.1A (max) @ VDS=600V, VGS=-5V Gate-to-Source Leakage Current (IGSS): 20A (max) @ VGS=+20V, VDS=0V Saturated Drain-to-Source Current (IDSS): 5-25mA @ VGS=0V, VDS=25V Static Drain-to-Source On-Resistance (RDS(ON)): 500-700 @ VGS=0V, ID=3mA Gate-to-Source Cut-off Voltage (VGS(OFF)): -1.5 to -3.3V @ VDS=3V, ID=8A Forward Transconductance (gfs): 15.4mS (typ) @ VDS=10V, ID=5mA Input Capacitance (CISS): 12.3pF (typ) @ VGS=-5V, VDS=25V, f=1.0MHz Output Capacitance (COSS): 2.6pF (typ) Reverse Transfer Capacitance (CRSS): 1.8pF (typ) Total Gate Charge (QG): 1.55nC (typ) @ VGS=-5V~5V, VDS=300V, ID=7mA Turn-on Delay Time (td(on)): 4ns (typ) @ VGS = -5V~5V, VDD = 300V, ID=7mA, RG = 20 Rise Time (trise): 9ns (typ) Turn-off Delay Time (td(off)): 14ns (typ) Fall Time (tfall): 84ns (typ) Diode Forward Voltage (VSD): 1.2V (max) @ ISD =3.0mA, VGS = -10V | Drain-to-Source Breakdown Voltage (BVDSSX): 100V Drain-to-Source Leakage Current (ID(OFF)): 10A (max) @ VDS=100V, VGS=-30V Gate-to-Source Leakage Current (IGSS): 20A (max) @ VGS=+30V, VDS=0V Saturated Drain-to-Source Current (IDSS): 100mA (min) @ VGS=0V, VDS=25V Static Drain-to-Source On-Resistance (RDS(ON)): 30 (max) @ VGS=0V, ID=100mA Gate-to-Source Cut-off Voltage (VGS(OFF)): -27V (max) @ VDS=9V, ID=8A Source-to-Gate Clamp Voltage (VCL): 11.5V (min) @ VDS=9V, ID=5mA Diode Forward Voltage (VSD): 1.2V (max) @ ISD=100mA, VGS=-30V | SOP-7 | Halogen Free |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
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