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Hefei Purple Horn E-Commerce Co., Ltd.

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China Fast switching N channel Enhanced Power MOSFET BL BLP024N10 T with low reverse
China Fast switching N channel Enhanced Power MOSFET BL BLP024N10 T with low reverse

  1. China Fast switching N channel Enhanced Power MOSFET BL BLP024N10 T with low reverse

Fast switching N channel Enhanced Power MOSFET BL BLP024N10 T with low reverse

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Drain to Source Voltage 100V
Current - Continuous Drain(Id) 223A
Operating Temperature - -55℃~+150℃
RDS(on) 2mΩ@10V
Gate Threshold Voltage (Vgs(th)) 3V
Type N-Channel
Pd - Power Dissipation 250W
Gate Charge(Qg) 148nC@10V
Description 100V 223A 2mΩ@10V 3V 250W TOLL-8 Single FETs, MOSFETs RoHS
Mfr. Part # BLP024N10-T
Package TOLL-8
Model Number BLP024N10-T

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  1. Product Details
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Product Specification

Drain to Source Voltage 100V Current - Continuous Drain(Id) 223A
Operating Temperature - -55℃~+150℃ RDS(on) 2mΩ@10V
Gate Threshold Voltage (Vgs(th)) 3V Type N-Channel
Pd - Power Dissipation 250W Gate Charge(Qg) 148nC@10V
Description 100V 223A 2mΩ@10V 3V 250W TOLL-8 Single FETs, MOSFETs RoHS Mfr. Part # BLP024N10-T
Package TOLL-8 Model Number BLP024N10-T

Product Overview

The BLP024N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench II technology. This technology significantly reduces conduction loss, improves switching performance, and enhances avalanche energy. It is ideally suited for Battery Management Systems (BMS) and high current switching applications, offering fast switching, low on-resistance, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. This product is RoHS compliant.

Product Attributes

  • Brand: Belling
  • Technology: Advanced Double Trench II
  • Certifications: RoHS compliant

Technical Specifications

Model Description Key Characteristics VDSS (V) ID (A) RDS(on).typ (m)
BLP024N10 N-channel Enhanced Power MOSFET
  • Fast Switching
  • Low On-Resistance
  • Low Gate Charge
  • Low Reverse transfer capacitances
  • High avalanche ruggedness
100 223 2

Detailed Electrical Characteristics

Parameter Test Conditions Min Typ Max Unit
OFF Characteristics
VDSS Drain-Source Breakdown Voltage VGS=0V, ID=250A 100 110 -- V
IDSS Drain-Source Leakage Current VDS=100V, VGS=0V -- -- 1 A
IDSS Drain-Source Leakage Current VDS=80V, VGS=0V @TC=125C -- -- 100 A
IGSS(F) Gate-Source Forward Leakage VGS=+20V -- -- 100 nA
IGSS(R) Gate-Source Reverse Leakage VGS=-20V -- -- -100 nA
ON Characteristics
RDS(on) Drain-Source On-Resistance VGS=10V, ID=50A, Pulse width tp300s, 2% -- 2 2.4 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A 2 3 4 V
Dynamic Characteristics
Ciss Input Capacitance VDS=50V, VGS=0, f=1MHz -- 9000 -- pF
Coss Output Capacitance -- 2838 -- pF
Crss Reverse Transfer Capacitance -- 415 -- pF
Qg Total Gate Charge VDD=50V, ID=100A, VGS=10V -- 148 -- nC
Qgs Gate-Source charge -- 47 -- nC
Qgd Gate-Drain charge -- 33 -- nC
Switching Characteristics
td(on) Turn-On Delay Time VDD=50V, VGS=10V, RG=1.6, Resistive Load -- 32 -- ns
tr Rise Time -- 40 -- ns
td(off) Turn-Off Delay Time -- 80 -- ns
tf Fall Time -- 35 -- ns
Source-Drain Diode Characteristics
IS Continuous Source Current -- -- 223 A
ISM Maximum Pulsed Current -- -- 892 A
VSD Diode Forward Voltage VGS=0V, IS=50A -- -- 1.2 V
Trr Reverse Recovery Time Is=90A,VGS=0, di/dt=100A/us -- 80 -- ns
Qrr Reverse Recovery Charge -- 195 -- nC

Ordering Information

Ordering Code Product Code Package Device Marking Packing
BLP024N10-T BLP024N10 TOLL8 P024N10 Reel
BLP024N10-BA BLP024N10 TO263-7 P024N10 Reel

Package Description

TO263-7

Symbol MIN NOM MAX
A 2.15 2.3 2.45
A1 0.1REF
b 0.6 0.75 0.9
b1 0.4REF
C 0.5REF
D 10.2 10.5 10.8
D1 2.8 3.2 3.6
E 9.7 9.9 10.1
E2 8.5REF
E1 9.6 9.8 10
e 1.2REF
H 11.5 11.75 12
E3 7REF
E4 0.6REF
Q 4.5REF
Q1 5.2REF
L 1 1.5 2
L3 0.5 0.7 0.9
L2 0.4 0.6 0.8
L1 1.1REF
P 2 3 4
7 9 12

TOLL-8

(Dimensions for TOLL-8 package are not explicitly detailed in a table but it is listed as an available package type.)

Important Notes

  • Exceeding the maximum ratings of the device may cause damage or permanent failure, affecting machine dependability. Always adhere to the absolute maximum ratings during circuit design.
  • When installing a heat sink, pay attention to torsional moment and heat sink smoothness.
  • MOSFETs are sensitive to static electricity; protect the device from static discharge during use.
  • Shanghai Belling reserves the right to make changes to this specification sheet without prior notice.

Contact Information


2509181546_BL-BLP024N10-T_C46547752.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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