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Hefei Purple Horn E-Commerce Co., Ltd.

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China Low gate charge 60V N Channel MOSFET ASDsemi ASDM60N70Q R designed for power
China Low gate charge 60V N Channel MOSFET ASDsemi ASDM60N70Q R designed for power

  1. China Low gate charge 60V N Channel MOSFET ASDsemi ASDM60N70Q R designed for power

Low gate charge 60V N Channel MOSFET ASDsemi ASDM60N70Q R designed for power

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Drain to Source Voltage 60V
Current - Continuous Drain(Id) 64A
Operating Temperature - -55℃~+150℃
RDS(on) 6.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)) 4V@250uA
Reverse Transfer Capacitance (Crss@Vds) 34pF
Output Capacitance(Coss) 240pF
Pd - Power Dissipation 56.5W
Input Capacitance(Ciss) 2.455nF
Gate Charge(Qg) 45nC@10V
Description 60V 64A 56.5W Surface Mount DFN-8(5x6)
Mfr. Part # ASDM60N70Q-R
Package DFN-8(5x6)
Model Number ASDM60N70Q-R

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  1. Product Details
  2. Company Details

Product Specification

Drain to Source Voltage 60V Current - Continuous Drain(Id) 64A
Operating Temperature - -55℃~+150℃ RDS(on) 6.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)) 4V@250uA Reverse Transfer Capacitance (Crss@Vds) 34pF
Output Capacitance(Coss) 240pF Pd - Power Dissipation 56.5W
Input Capacitance(Ciss) 2.455nF Gate Charge(Qg) 45nC@10V
Description 60V 64A 56.5W Surface Mount DFN-8(5x6) Mfr. Part # ASDM60N70Q-R
Package DFN-8(5x6) Model Number ASDM60N70Q-R

Product Overview

The Ascend Semiconductor ASDM60N70Q is a 60V N-Channel MOSFET designed with Trench Power DTMOS Technology. It offers low RDS(ON) and low gate charge, making it optimized for fast-switching applications. This MOSFET is ideal for synchronous rectification in DC/DC and AC/DC converters, as well as isolated DC/DC converters in telecom and industrial sectors.

Product Attributes

  • Brand: Ascend Semiconductor Co.,Ltd
  • Product Line: Ascend Semicondutor
  • Technology: Trench Power DTMOS
  • Channel Type: N-Channel
  • Package Type: DFN5*6-8
  • Origin: China (implied by company name and location)

Technical Specifications

Parameter Symbol Test Conditions Value Unit
Drain-Source Voltage VDSS VGS = 0V 60 V
RDS(ON)-Typ@VGS=10V RDS(on) VGS = 10V, ID = 20A 6.5 m
Continuous Drain Current ID TC = 25C 64 A
Pulsed Drain Current IDM (note1) 256 A
Gate-Source Voltage VGSS 20 V
Single Pulse Avalanche Energy EAS (note2) 65 mJ
Avalanche Current IAS (note1) 36 A
Power Dissipation PD TC = 25C 56.5 W
Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 C
Thermal Resistance, Junction-to-Case RthJC 1.7 C/W
Thermal Resistance, Junction-to-Ambient RthJA 50 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 60 V
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V, TJ = 25C 1 A
Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V, TJ = 150C 100 A
Gate-Source Leakage IGSS VGS = 20V 100 nA
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.5 - 4 V
Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A (Note3) 6.5 - 9 m
Forward Transconductance gfs VDS = 5V, ID = 20A (Note3) 85 S
Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz 2455 pF
Output Capacitance Coss VGS = 0V, VDS = 30V, f = 1.0MHz 240 pF
Reverse Transfer Capacitance Crss VGS = 0V, VDS = 30V, f = 1.0MHz 34 pF
Total Gate Charge Qg VDD = 30V, ID = 20A, VGS = 10V 45 nC
Gate-Source Charge Qgs VDD = 30V, ID = 20A, VGS = 10V 13.5 nC
Gate-Drain Charge Qg VDD = 30V, ID = 20A, VGS = 10V 11.5 nC
Turn-on Delay Time td(on) VDD = 30V, ID = 20A, RG = 3 8 ns
Turn-on Rise Time tr VDD = 30V, ID = 20A, RG = 3 3 ns
Turn-off Delay Time td(off) VDD = 30V, ID = 20A, RG = 3 25 ns
Turn-off Fall Time tf VDD = 30V, ID = 20A, RG = 3 4 ns
Continuous Body Diode Current IS TC = 25C 64 A
Pulsed Diode Forward Current ISM 256 A
Body Diode Voltage VSD TJ = 25C, ISD = 1A, VGS = 0V 0.72 - 1 V
Reverse Recovery Time trr IF = 20A, diF/dt = 500A/s 25 ns
Reverse Recovery Charge Qrr IF = 20A, diF/dt = 500A/s 110 nC

Ordering and Marking Information

Package Marking Device No. Packing Quantity
DFN5*6-8 60N70 ASDM60N70Q-R 4000/Reel

2410121637_ASDsemi-ASDM60N70Q-R_C2972885.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...

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Get in touch with us

  • Reach Us
  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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