| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| RDS(on) | 6mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 700pF |
| Number | 1 P-Channel |
| Output Capacitance(Coss) | 742pF |
| Pd - Power Dissipation | 109W |
| Input Capacitance(Ciss) | 6.56nF |
| Gate Charge(Qg) | 30nC@10V |
| Description | P-Channel 30V 100A 109W Surface Mount TO-252 |
| Mfr. Part # | ASDM30P100KQ-R |
| Package | TO-252 |
| Model Number | ASDM30P100KQ-R |
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Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ | RDS(on) | 6mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA | Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 700pF | Number | 1 P-Channel |
| Output Capacitance(Coss) | 742pF | Pd - Power Dissipation | 109W |
| Input Capacitance(Ciss) | 6.56nF | Gate Charge(Qg) | 30nC@10V |
| Description | P-Channel 30V 100A 109W Surface Mount TO-252 | Mfr. Part # | ASDM30P100KQ-R |
| Package | TO-252 | Model Number | ASDM30P100KQ-R |
The Ascend Semiconductor ASDM30P100KQ is a -30V P-Channel MOSFET designed with advanced groove technology, offering excellent RDS(ON) and operating at low gate voltage. This MOSFET is suitable for applications such as lithium battery protection, wireless impact, and mobile phone fast charging.
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| VDSS | Drain-Source Voltage | -30 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | TC = 25 | -100 | A | ||
| ID | Continuous Drain Current | TC = 100 | -59 | A | ||
| IDM | Pulsed Drain Current | note1 | -400 | A | ||
| EAS | Single Pulsed Avalanche Energy | note2 | 210 | mJ | ||
| PD | Power Dissipation | TC = 25 | 109 | W | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +175 | |||
| Electrical Characteristics (TJ=25, unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250A | -30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS= -30V, VGS=0V | - | - | -1 | A |
| IGSS | Gate to Body Leakage Current | VDS=0V, VGS= ±20V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID= -250A | -1.0 | -1.5 | -2.5 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS= -10V, ID= -30A | - | 5.0 | 6.0 | mΩ |
| VGS= -4.5V, ID= -20A | - | 7.0 | 9.0 | mΩ | ||
| Capacitance | Input Capacitance (Ciss) | VDS= -15V, VGS=0V, f=1.0MHz | - | 30 | - | nF |
| Output Capacitance (Coss) | - | 6560 | - | pF | ||
| Reverse Transfer Capacitance (Crss) | - | 742 | - | pF | ||
| Gate Charge | Total Gate Charge (Qg) | VDS= -15V, ID= -30A, VGS= -10V | - | 6 | - | nC |
| Gate-Source Charge (Qgs) | - | - | - | nC | ||
| Gate-Drain(Miller) Charge (Qgd) | - | 8 | - | nC | ||
| Switching Times | Turn-on Delay Time (td(on)) | VDD= -15V, ID= -30A, VGS= -10V, RGEN=2.5Ω | - | 11 | - | ns |
| Turn-on Rise Time (tr) | - | 13 | - | ns | ||
| Turn-off Delay Time (td(off)) | - | 52 | - | ns | ||
| Turn-off Fall Time (tf) | - | 21 | - | ns | ||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -100 | A | |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | -400 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS=0V, IS= -30 A | - | -0.8 | -1.2 | V |
| Ordering and Marking Information | ||||||
| Device No. | Marking | Package | Packing | Quantity | ||
| ASDM30P100KQ-R | 30P100 | TO-252 | Tape&Reel | 2500/Reel | ||
Notes:
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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