Hefei Purple Horn E-Commerce Co., Ltd.
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 45A |
| RDS(on) | 12mΩ@4.5V |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V@250uA |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.374nF |
| Pd - Power Dissipation | 30W |
| Gate Charge(Qg) | 9.6nC@0V |
| Description | N-Channel 30V 45A 30W Surface Mount PDFN3333-8 |
| Mfr. Part # | AKF30N10S |
| Package | PDFN3333-8 |
| Model Number | AKF30N10S |
View Detail Information
Explore similar products
ADP120N080G2 Silicon Carbide MOSFET 1200V N Channel with Low Drain Source
Low current n channel mosfet transistor BLUE ROCKET BSS138 in sot 23 package for
power management using Bruckewell MSH30P100 P Channel 30 Volt MOSFET with
Small signal N channel MOSFET Diodes BSS127S 7 ideal for DC DC converters and
Product Specification
| Drain to Source Voltage | 30V | Current - Continuous Drain(Id) | 45A |
| RDS(on) | 12mΩ@4.5V | Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V@250uA | Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 102pF | Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.374nF | Pd - Power Dissipation | 30W |
| Gate Charge(Qg) | 9.6nC@0V | Description | N-Channel 30V 45A 30W Surface Mount PDFN3333-8 |
| Mfr. Part # | AKF30N10S | Package | PDFN3333-8 |
| Model Number | AKF30N10S |
The AKF30N10S is a 30V N-Channel Enhancement Mode MOSFET from ARK Microelectronics. It features low RDS(ON), low gate charge, and advanced high cell density trench technology. This RoHS compliant and halogen-free available device is 100% avalanche tested and is suitable for power management in inverter systems, synchronous rectification, and load switch applications.
| Parameter | Rating | Unit | Test Conditions |
| Absolute Maximum Ratings | |||
| Drain-Source Voltage (VDSS) | 30 | V | TA=25C unless otherwise specified |
| GateSource Voltage (VGS) | 20 | V | |
| Continuous Drain Current (ID) @ TC=25C | 45 | A | |
| Continuous Drain Current (ID) @ TC=100C | 28 | A | |
| 300us Pulsed Drain Current (IDP) | 180 | A | Tested |
| Single Pulse Avalanche Energy (EAS) | 25 | mJ | L=0.5mH, IAS=10A, Starting TJ=25C |
| Power Dissipation (PD) | 30 | W | |
| Derating Factor above 25C | 0.24 | W/C | |
| Operating and Storage Temperature Range (TJ and TSTG) | -55 ~ 150 | C | |
| Thermal Characteristics | |||
| Thermal Resistance, Junction-to-Ambient (RJA) | 34 | C /W | |
| Thermal Resistance, Junction-to-Case (RJC) | 4.2 | C /W | |
| OFF Characteristics | |||
| Drain-Source Breakdown Voltage (BVDSS) | 30 | V | VGS=0V, ID=250A |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS=24V, VGS=0V |
| Gate Leakage Current (IGSS) @ VGS=20V | 100 | nA | VDS=0V |
| Gate Leakage Current (IGSS) @ VGS=-20V | -100 | nA | VDS=0V |
| On Characteristics | |||
| Drain-Source On-Resistance (RDS(ON)) @ VGS=10V, ID=15A | 7.3 | m | Min. Typ. Max. |
| Drain-Source On-Resistance (RDS(ON)) @ VGS=4.5V, ID=10A | 9.0 | m | Min. Typ. Max. |
| Gate Threshold Voltage (VGS(TH)) | 1.0 ~ 2.0 | V | VDS = VGS, ID=250A |
| Forward Transconductance (GFS) | 47 | S | VDS=5V, ID=15A |
| Dynamic Characteristics | |||
| Input Capacitance (Ciss) | 1374 | pF | VGS=0V,VDS=15V, f=1MHz |
| Output Capacitance (Coss) | 165 | pF | VGS=0V,VDS=15V, f=1MHz |
| Reverse Transfer Capacitance (Crss) | 102 | pF | VGS=0V,VDS=15V, f=1MHz |
| Total Gate Charge (Qg) | 9.6 | nC | VDS=15V,VGS=4.5V, ID=10A |
| Gate-Source Charge (Qgs) | 3.1 | nC | VDS=15V,VGS=4.5V, ID=10A |
| Gate-Drain Charge (Qgd) | 3.3 | nC | VDS=15V,VGS=4.5V, ID=10A |
| Gate Resistance (Rg) | 8 | f=1MHz | |
| Resistive Switch Characteristics | |||
| Turn-On Delay Time (td(on)) | 23 | ns | VDD=15V ID=15A,VGS=10V RG=3.3 |
| Turn-On Rise Time (tr) | 24 | ns | VDD=15V ID=15A,VGS=10V RG=3.3 |
| Turn-Off Delay Time (td(off)) | 185 | ns | VDD=15V ID=15A,VGS=10V RG=3.3 |
| Turn-Off Fall Time (tf) | 71 | ns | VDD=15V ID=15A,VGS=10V RG=3.3 |
| Source-Drain Diode Characteristics | |||
| Continuous Source Current (ISD) | 45 | A | Integral P-N diode in MOSFET |
| Maximum Pulsed Current (ISM) | 180 | A | Integral P-N diode in MOSFET |
| Diode Forward Voltage (VSD) | 1.2 | V | ISD=1A,VGS=0V |
| Reverse Recovery Time (trr) | 47 | ns | ISD=15A, dISD/dt=100A/S |
| Reverse Recovery Charge (Qrr) | 35 | nC | ISD=15A, dISD/dt=100A/S |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and... Company Profile Hefei Purple Horn E-Commerce Co., Ltd. is a professional company focus on integrated circuit ic business. Hefei Purple Horn E-Commerce Co., Ltd. will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and...
Get in touch with us
Leave a Message, we will call you back quickly!